NJSEMI BC178 The above types are pnp silicon planar epitaxial transistors for use in af small signal amplifier stages and direct coupled circuit Datasheet

, One.
BC177,8,9
BC257,8,9
.BC307,8,9
BC320,1,2
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL
SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS,
BC177, 8, 9 are complementary to BC107, 8, 9.
BC257, 8, 9 are complementary to BC167, 8, 9.
BC307, 8, 9 are complementary to BC237, 8, 9.
BC320, 1, 2 are complementary to BC317, 8, 9.
TO-18
TO-92B
CBS
ECB
BC177,8,9
BC257,8,9
TO-92F
TO-92A
CASE
CEB
SSC
BC307,8,9
BC320 f l,2
ABSOLUTE MAXIMUM RATINGS
(v)
-VCES
(v)
-VCEO
BC177
BC178
BC179
50
50
45
30
30
25
25
5
5
20
5
BC257
BC258
BC259
50
30
50
30
25
45
3C307
BCJ08
3C309
50
30
50
30
25
45
25
BC320
BC321
BC322
50
45
30
TYPE
*
-VCBO
25
25
25
Tstal Power Dissipation ®
(v)
25
20
20
45
30
20
-VEBO
(v)
-IC(DC)
ptot
*
Tjt T8tg
(mA)
(mW)
100
100
100
300
300
300
-55 to 175°C
5
5
100
100
100
300
300
300
-55 to 150°C
5
5
5
100
100
100
300
300
300
-55 to 150°C
6
5
5
150
310
310
150
150
-55 to 150°C
310
2°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Informat.on hirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
3IjP6TRICAL CHARACTERISTICS
(TA=25°C
unless otherwise noted)
SYMBOL
PARAMETER
Collector-Base Breakdown Voltage
-BVCBO
Collector-Emitter Breakdown Voltage
-LVCEO *
Smitter-Base Breakdown Voltage
-BVEBO
MIN
TYP
MAX
Note 1
1
Collector Cutoff Current
-ICES
BC177, 178, 179 "\, 258, 259 |
only
15
4
UNIT
V
-IC=10uA
lE-0
V
-IC=2mA
IB-O
V
-lE-ljiA
Ic-0
nA
uA
VCE-VCES VBE-O
BC307, 308, 309 J
Collector Cutoff Current
BC320, 321, 322 only
Collector-Emitter Saturation Voltage
TEST CONDITIONS
VCS=VCES VBE-O
TA=125°C
30
15
-ICBO
nA
uA
-VCB-20V lE-0
-VcB=20V IE=0
TA=IOOQC
-VCE(sat)*
0.1 0.3
V
-IC=10mA -!B=0.5mA
0.25
V
-IC=100mA -lB=5mA
V
-I(3=10mA,lB*value at
which -lc=llmA -VcE=lV
V
-IC-10mA -lB=0-5mA
-1C -100mA -lB-5mA
types
Collector-Emitter Knee Voltage
-VCEK
0.3 0.6
BC177, 178, 1791 onl
^
BC307, 308, 309 \r Saturation Voltage
-VBE(sat)*
0.72
0.92
All types
Base-Emitter Voltage
All types
BC320, 321, 322 only
-VBB *
-VBE *
Current Gain-Bandwidth Product
fT
Collector-Base Capacitance
BC177. 178, 179
Cob
V
0.6 0.65 0.75' V
0.7
0.77V
MHz
180
7
J.2
6
3-2
3-2
6
4
BC177, 178
2
10
BC257, 258
BC307, 308
BC320, 321
2
2
2
10
10
6
BC320, 321, 322
Noise Figure
-VCE-5V
-IC-lOmA -VcB=5V
-IC=10mA
-VcE=5V
-VCB=IOV IE-O
3.6
BC257, 258, 259
3C307, 308, 309
-IC=2mA
PF
PF
pF
PF
PP
NF
* &ilse Test t Pulse Width=0.3mS, Duty Cycle=l/0
1 : equal_to_the value of absolute maximum ratings
dB
dB
dB
dB
dB
f-lMHz
-IC-0.2mA
RG-2KA
Af.200Hz
-VCE=5V
f-lkHz
PARAMETER
No/5e
SYMBOL
Figure
MIH
1.2
BC259 > only
BCJ09
BC322 1
HFE G-ROUP vi
(Pulsed)
0.01mA
KIN
2mA
70
100mA
TYP
70
MAX
110
140
h - PARAMETER
4
dB
dB
TEST CONDITIONS
-1C =0. 2mA
RG=2K&
Af-200Hz
-7CE-57
f-lKHz
-IC=0.2mA -703=5^
RG=2KA f=30Hz-15KHz
TA=25°C
HFE GROUP A
MIN TYP MAX
HFE GROUP B
MIN TYP MAX '
110
110
60
h - PARAMETERS © -IC=2mA
4
1.2
D.C. CURRENT GAIN (HFE) @ -V£8""57
^
UNIT
NF
BC179 "I
at-Ic
TYP MAX
170
220
200
300
200
80
HFE GROUP C
MIN
Injwt Impedance
hie
1.4
450
420
Voltage Feedback Ratio
nre
2.5
Small Signal Current Gain
hfe
75 HO 150
Output Admittance
hoe
20
4-5
•
0.01
100
8.7
4
3.5
125 190 260 240 330 500 450 580 900
60
35
25
3
V BE AND vCE(sat)
VS COLLECTOR CURRENT
200
800
240
TYPICAL CHARACTERISTICS AT TA=25°C (Pulse Test)
D.C. CURRENT GAIN
VS COLLECTOR CURRENT
520
HFE GROUP A HFE GROUP B HFE GROUP c
MIN TYP MAX MIN TYP MAX MIN TYP MAX
2.7
MAX
330
140
-VCE=57 f-lkHz TA=25°C
HFE GROUP 71
SYMBOL
MIN TYP MAX
TYP
UNIT
Kfl
xlO-4
rv
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