Microsemi APTGT150DA120G Boost chopper fast trench field stop igbt power module Datasheet

APTGT150DA120G
Boost chopper
Fast Trench + Field Stop IGBT®
Power Module
OUT
Q2
G2
E2
0/VBUS
VBUS
0/VBUS
OUT
E2
G2
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
220
150
350
±20
690
Tj = 125°C
300A @ 1150V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
July, 2006
CR1
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APTGT150DA120G – Rev 1
VBUS
VCES = 1200V
IC = 150A @ Tc = 80°C
APTGT150DA120G
All ratings @ Tj = 25°C unless otherwise specified
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 150A
Tj = 125°C
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Chopper diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
Test Conditions
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
Typ
1.7
2.0
5.8
Typ
10.7
0.56
0.48
280
40
420
Max
Unit
350
2.1
µA
6.5
400
V
nA
Max
Unit
nF
ns
290
45
520
ns
90
14
mJ
16
Typ
Max
1200
Tj = 25°C
Tj = 125°C
IF = 150A
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
150
1.6
1.6
170
Tj = 125°C
Tj = 25°C
280
14
Tj = 125°C
Tj = 25°C
Tj = 125°C
28
6
11
di/dt =2500A/µs
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Unit
V
VR=1200V
IF = 150A
VR = 600V
V
75
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
5.0
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
R G = 2.2Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
R G = 2.2Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 150A
Tj = 125°C
R G = 2.2Ω
Fall Time
Tf
Min
250
600
µA
A
2.1
V
ns
July, 2006
Symbol Characteristic
µC
mJ
2-5
APTGT150DA120G – Rev 1
Electrical Characteristics
APTGT150DA120G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.18
0.30
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGT150DA120G – Rev 1
July, 2006
SP6 Package outline (dimensions in mm)
APTGT150DA120G
Typical Performance Curve
Output Characteristics (VGE=15V)
300
Output Characteristics
300
TJ = 125°C
250
T J=25°C
150
VGE =15V
150
100
100
50
50
V GE=9V
0
0
1
2
VCE (V)
3
0
4
1
2
V CE (V)
3
4
Energy losses vs Collector Current
Transfert Characteristics
300
32
T J=25°C
250
24
E (mJ)
150
100
T J=125°C
20
Er
8
0
0
7
8
9
VGE (V)
10
11
0
12
26
22
150
200
250
300
Reverse Bias Safe Operating Area
Eon
300
250
IC (A)
Eoff
18
14
100
350
VCE = 600V
VGE =15V
IC = 150A
TJ = 125°C
30
50
IC (A)
Switching Energy Losses vs Gate Resistance
34
Eon
12
4
6
Eoff
16
50
5
V CE = 600V
V GE = 15V
RG = 2.2Ω
T J = 125°C
28
T J=125°C
200
E (mJ)
V GE=13V
200
0
IC (A)
VGE =17V
TJ=125°C
200
IC (A)
IC (A)
250
200
150
V GE=15V
T J=125°C
RG=2.2Ω
Eon
100
Er
10
50
6
2
0
0
2
4
6
8 10 12 14
Gate Resistance (ohms)
16
18
0
400
800
V CE (V)
1200
1600
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
IGBT
0.9
July, 2006
0.16
0.7
0.12
0.5
0.08
0.3
0.04
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGT150DA120G – Rev 1
Thermal Impedance (°C/W)
0.2
APTGT150DA120G
Forward Characteristic of diode
300
VCE =600V
D=50%
RG=2.2Ω
T J=125°C
T c=75°C
50
40
ZVS
30
T J=25°C
250
200
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
ZCS
T J=125°C
150
100
20
10
0
0
40
TJ =125°C
50
Hard
switching
0
80
120
160
200
0
240
0.4
IC (A)
0.8
1.2
1.6
V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.25
0.9
Diode
0.7
0.2
0.15
0.1
0.05
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT150DA120G – Rev 1
July, 2006
rectangular Pulse Duration (Seconds)
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