TG2211FT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2211FT RF SPDT Switch Antenna switches for Bluetooth class 2 and 3 Switch the diversity antenna Switch the receive filter for mobile communication Switch the local signal Features · Fewer external parts: On-chip inverter circuit · Low insertion Loss: LOSS = 0.45dB (typ.) @1.0 GHz · High isolation: ISL = 25dB (typ.) @1.0 GHz · Low voltage operation: VCON = 0 V/2.7 V · Small package: TU6 package (mold size = 2.0 × 1.25 × 0.6 mm) = 0.55dB (typ.) @2.5 GHz = 24dB (typ.) @2.5 GHz Weight: 0.008 g (typ.) Pin Connection and Marking (top view) VCON 6 RFcom 5 Equivalent Circuit VDD 4 VCON 6 RFcom 5 VDD 4 3 RF2 1 RF1 2 GND 3 RF2 UM 1 RF1 2 GND Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VDD 6 V Control voltage VCON 6 V Pi 350 mW Operating temperature range Topr −40~85 °C Storage temperature range Tstg −55~125 °C Input power 1 2002-07-30 TG2211FT Electrical Characteristics (VDD = 2.7 V, VCON(Hi) = 2.7 V, VCON(LO) = 0 V, Ta = 25°C, Zg = Zl = 50 W) Characteristics Symbol Test Circuit LOSS (1) 1 LOSS (2) Min Typ. Max Unit f = 1.0 GHz, Pi = 0dBmW ¾ 0.45 0.75 dB 1 f = 2.0 GHz, Pi = 0dBmW ¾ 0.5 0.8 dB LOSS (3) 1 f = 2.5 GHz, Pi = 0dBmW ¾ 0.55 0.85 dB ISL (1) 1 f = 1.0 GHz, Pi = 0dBmW 20 25 ¾ dB ISL (2) 1 f = 2.0 GHz, Pi = 0dBmW 20 25 ¾ dB ISL (3) 1 f = 2.5 GHz, Pi = 0dBmW 20 24 ¾ dB ISL (4) 1 f = 1.0 GHz, Pi = 0dBmW 20 25 ¾ dB ISL (5) 1 f = 2.0 GHz, Pi = 0dBmW 17 20 ¾ dB ISL (6) 1 f = 2.5 GHz, Pi = 0dBmW 14 17 ¾ dB Pi1dB (1) 1 f = 1 GHz 17 23 ¾ Pi1dB (2) 1 f = 2 GHz 17 23 ¾ Pi1dB (3) 1 f = 2.5 GHz 16 22 ¾ Supply current IDD ¾ When no signal ¾ 0.20 0.35 mA Control current ICON ¾ When no signal ¾ 0.03 0.05 mA Switching time tsw 1 f = 100 MHz, Pi = 0dBmW ¾ 80 200 ns Insertion loss between RFcom to RF1 between RFcom to RF2 Isolation between RF1 to RF2 Input power at 1dB gain compression Test Condition dBmW Switch Condition (VDD = Hi) Vcon potential Internal connection Rfcom – RF1 Rfcom – RF2 ON OFF OFF ON RF2 Hi RFcom RF1 RF2 Low RFcom RF1 2 2002-07-30 TG2211FT Pin Description Pin No. Pin Symbol Description 1 RF1 RF pin. Connect to RFcom when Vcon goes High. Connect a capacitor (C1) for blocking the internal DC voltage of the IC. 2 GND GND pin. Ground in the vicinity of this pin. 3 RF2 RF pin. Connect to RFcom when Vcon goes Low. Connect a capacitor (C1) for blocking the internal DC voltage of the IC. 4 VDD Power supply pin and RF GND pin. When the device is operating, always apply the voltage of “High level ” to this pin. This pin should be grounded by a capacitor (C3) as close as possible for RF performance. The value of this capacitor affects the isolation. To protect RF signal leakage, connect a 1-kW resistor (R). 5 RFcom RF pin. Connection can be switched to RF1 or RF2 by varying the level of the voltage applied to the Vcon pin. Connect a capacitor (C1) for blocking the internal DC voltage of the IC. 6 VCON Voltage control pin. The switch connections can be controlled by varying the level of the voltage to this pin. Connect a bypass capacitor (C2) to this pin. Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. Test Circuit 1 (RF Test Circuit) RFcom C1 R VCON C2 VDD C3 Top view RF1 C1 C1 RF2 GND C1: 56 pF C2: 10 pF C3: 4 pF R: 1 kW Please fix the value of each capacity for using frequency and circuit. Reference Value of External Parts 50~300 MHz 300~500 MHz 0.5~2.5 GHz Ｃ1 1000 pF 100 pF 56 pF Ｃ2 100 pF 10 pF 10 pF Ｃ3 100 pF 100 pF 4 pF R 1 kW 1 kW 1 kW 3 2002-07-30 TG2211FT Evaluation Board RFcom C1 C3 VCON C2 RF1 VDD R C1 RF2 C1 2211-1 Notice The circuits and measurements contained in this document are given only in the context of as examples of applications for these products. Moreover, these example application circuits are not intended for mass production, since the high-frequency characteristics (the AC characteristics) of these devices will be affected by the external components which the customer uses, by the design of the circuit and by various other conditions. It is the responsibility of the customer to design external circuits which correctly implement the intended application, and to check the characteristics of the design. TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications. 4 2002-07-30 TG2211FT LOSS – Pi (RFcom – RF2) 0.5 0.5 1.0 1.0 (dB) 0.0 LOSS 1.5 2.0 2.5 Insertion loss Insertion loss LOSS (dB) LOSS – Pi (RFcom – RF1) 0.0 3.0 3.5 4.0 4.5 VDD = 2.7 V VCON = 2.7 V RF2 = 50 W f = 2.5 GHz 5.0 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 10 Input power Pin 20 VDD = 2.7 V VCON = 0 V RF1 = 50 W f = 2.5 GHz 5.0 0 30 (dBmW) 10 Input power Pin ISL – Pi (RFcom – RF1) 20 (dBmW) ISL – Pi (RFcom – RF2) 0 0 VDD = 2.7 V ISL (dB) f = 2.5 GHz 10 15 20 25 f = 2.5 GHz 10 15 20 25 30 0 10 Input power Pin 20 30 0 30 10 Input power Pin (dBmW) LOSS – f (RFcom – RF1) 20 30 (dBmW) LOSS – f (RFcom – RF2) 0 (dB) 0 1.0 LOSS 1.0 LOSS (dB) VCON = 2.7 V RF1 = 50 W 5 Isolation ISL (dB) Isolation VDD = 2.7 V VCON = 0 V RF2 = 50 W 5 2.0 Insertion loss Insertion loss 30 3.0 4.0 0 VDD = 2.7 V VCON = 2.7 V 2.0 3.0 4.0 RF2 = 50 W 1.0 Frequency f 2.0 3.0 0 (GHz) VDD = 2.7 V VCON = 0 V RF1 = 50 W 1.0 Frequency f 5 2.0 3.0 (GHz) 2002-07-30 TG2211FT ISL – f (RFcom – RF2) 0 10 20 20 ISL (dB) 0 10 30 40 Isolation Isolation ISL (dB) ISL – f (RFcom – RF1) 50 60 70 @VDD = 2.7 V 30 40 50 60 70 VCON = 0 V RF2 = 50 W VCON = 2.7 V RF1 = 50 W 1.0 0 @VDD = 2.7 V 2.0 Frequency f 3.0 0 1.0 (GHz) Frequency f 0 10 20 20 ISL (dB) 0 10 30 40 50 60 @VDD = 2.7 V 40 50 60 70 @VDD = 2.7 V VCON = 0 V RFcom = 50 W 1 2 Frequency f (GHz) 3 0 Switching Time (RF1: RAISE) 1 2 Frequency f (GHz) 3 Switching Time (RF1: FALL) VC VC (GHz) 30 VCON = 2.7 V RFcom = 50 W 0 3.0 ISL – f (RF1 – RF2) Isolation Isolation ISL (dB) ISL – f (RF1 – RF2) 70 2.0 49 ns 84 ns RF1 RF1 Time (50 ns/div) Time (50 ns/div) 6 2002-07-30 TG2211FT Switching Time (RF2: RAISE) Switching Time (RF2: FALL) VC VC 63 ns 67 ns RF2 RF2 Time (50 ns/div) Time (50 ns/div) 7 2002-07-30 TG2211FT Package Dimensions Weight: 0.008 g (typ.) 8 2002-07-30 TG2211FT RESTRICTIONS ON PRODUCT USE 020704EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium Arsenide (GaAs) is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break , cut, crush or dissolve chemically. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2002-07-30