Vishay DG611AEY-T1-E3 1 pc charge injection, 100 pa leakage, quad spst switch Datasheet

New Product
DG611A/DG612A/DG613A
Vishay Siliconix
1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches
DESCRIPTION
FEATURES
The DG611A, DG612A and DG613A contain four
independently selectable SPST switches. They offer
improved performance over the industry standard DG611
series. The DG611A and DG612A have all switches
normally closed and normally open respectively, while the
DG613A has 2 normally open and 2 normally closed
switches.
They are designed to operate from a 2.7 V to 12 V single
supply or from ± 2.7 V to ± 5 V dual supplies and are fully
specified at + 3 V, + 5 V and ± 5 V. All control logic inputs
have guaranteed 2 V logic high limits when operating from
+ 5 V or ± 5 V supplies and 1.4 V when operating from a
+ 3 V supply.
The DG611A, DG612A and DG613A switches conduct
equally well in both directions and offer rail to rail analog
signal handling.
1 pC low charge injection, coupled with very low switch
capacitance: 2 pF, fast switching speed: ton/toff 27 ns/16 ns
and excellent 3 dB bandwidth: 720 MHz, make these
products ideal for precision instrumentation, high-end data
acquisition, automated test equipment and high speed
communication applications.
Operation temperature is specified from - 40 °C to + 125 °C.
The DG611A, DG612A and DG613A are available in 16 lead
SOIC, TSSOP and the space saving 1.8 x 2.6 mm miniQFN
packages.
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•
•
•
•
•
•
•
•
•
•
Low charge injection (1 pC typ.)
Leakage current < 0.25 nA at 85 °C
RoHS
Low switch capacitance (Csoff 2 pF typ.)
COMPLIANT
Low rDS(on) - 115 Ω maximum
Fully specified with single supply operation at 3 V, 5 V and
dual supplies at ± 5 V
Low voltage, 2.5 V CMOS/TTL compatible
720 MHz, 3 dB bandwidth
Excellent isolation performance (62 dB at 10 MHz)
Excellent crosstalk performance (90 dB at 10 MHz)
Fully specified from - 40 °C to + 85 °C and - 40 °C to + 125 °C
16 lead SOIC, TSSOP and miniQFN package (1.8 x 2.6 mm)
APPLICATIONS
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•
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Precision instrumentation
Medical instrumentation
Automated test equipment
High speed communications applications
High-end data acquisition
Sample and hold applications
Sample and hold systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG611A
SOIC/TSSOP
DG611A
miniQFN
D1 IN1 IN2 D2
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
GND
5
12
NC
S4
6
11
S3
D4
7
10
D3
IN4
8
9
Top View
IN3
16
Kxx
Pin 1
14
13
S1
1
12
S2
V-
2
11
V+
GND
3
10
NC
S4
4
9
S3
5
Device Marking: Kxx for DG611A
(miniQFN16)
Lxx for DG612A
Pxx for DG613A
xx = Date/Lot Traceability Code
15
6
7
8
D4 IN4 IN3 D3
Top View
TRUTH TABLE
Logic
DG611A
DG612A
0
ON
OFF
1
OFF
ON
Document Number: 69904
S-72760-Rev. A, 04-Feb-08
www.vishay.com
1
New Product
DG611A/DG612A/DG613A
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG613A
SOIC/TSSOP
DG613A
miniQFN
D1 IN1 IN2 D2
16
15
14
13
IN1
1
16
IN2
D1
2
15
D2
S1
1
12
S2
S1
3
14
S2
V-
2
11
V+
V-
4
13
V+
GND
3
10
NC
GND
5
12
NC
S4
4
9
S3
S4
6
11
S3
D4
7
10
D3
5
6
7
8
D4 IN4 IN3 D3
IN4
9
8
IN3
Top View
Top View
Pxx
Pin 1
Device Marking: Pxx for DG613A
(miniQFN16)
TRUTH TABLE
Logic
SW1, SW4
0
OFF
SW2, SW3
ON
1
ON
OFF
ORDERING INFORMATION
Temp. Range
Package
Part Number
16-Pin TSSOP
DG611AEQ-T1-E3
DG612AEQ-T1-E3
DG613AEQ-T1-E3
16-Pin Narrow SOIC
DG611AEY-T1-E3
DG612AEY-T1-E3
DG613AEY-T1-E3
16-Pin miniQFN
DG611AEN-T1-E4
DG612AEN-T1-E4
DG613AEN-T1-E4
DG611A/612A/613A
- 40 °C to 125 °Ca
Notes:
a. - 40 °C to 85 °C datasheet limits apply.
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Document Number: 69904
S-72760-Rev. A, 04-Feb-08
New Product
DG611A/DG612A/DG613A
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Limit
V+ to VGND to V-
7
Continuous Current (Any Terminal)
30
Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)
100
Storage Temperature
- 65 to 150
16-Pin TSSOP
c
16-Pin TSSOP
mA
°C
450
16-Pin miniQFNd
16-Pin Narrow SOIC
Thermal Resistance (Package)b
V
(V-) - 0.3 V to (V+) + 0.3 V
or 30 mA, whichever occurs first
Digital Inputsa, VS, VD
Power Dissipation (Package)b
Unit
14
525
e
mW
640
178
16-Pin miniQFN
152
16-Pin Narrow SOIC
125
°C/W
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 5.6 mW/°C above 70 °C.
d. Derate 6.6 mW/°C above 70 °C.
e. Derate 8.0 mW/°C above 70 °C.
f. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal
is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
Document Number: 69904
S-72760-Rev. A, 04-Feb-08
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New Product
DG611A/DG612A/DG613A
Vishay Siliconix
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Symbol
V+ = + 5 V, V- = - 5 V
Test Conditions
Unless Specified
V+ = + 5 V, V- = - 5 V
VIN = 2.0 V, 0.8 Va
- 40 to 125 °C
Temp.b
Typ.c
- 40 to 85 °C
Min.d
Max.d
Min.d
Max.d
Unit
-5
5
-5
5
V
Analog Switch
Analog Signal Rangee
VANALOG
Full
rON
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
Room
Full
72
115
160
115
140
ΔrON
IS = 1 mA, VD = ± 3 V
Room
Full
0.7
4
6.5
4
5.5
rFLATNESS
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
Room
Full
25
40
60
40
55
IS(off)
V+ = 5.5 V, V- = - 5.5 V
VD = + 4.5 V/- 4.5 V
VS = - 4.5 V/+ 4.5 V
Room
Full
± 0.02
- 0.1
-2
0.1
2
- 0.1
- 0.25
0.1
0.25
Room
Full
± 0.02
- 0.1
-2
0.1
2
- 0.1
- 0.25
0.1
0.25
ID(on)
V+ = 5.5 V, V- = - 5.5 V
VD = VS = ± 4.5 V
Room
Full
± 0.02
- 0.1
-6
0.1
6
- 0.1
- 0.25
0.1
0.25
Input Current, VIN Low
IIL
VIN Under Test = 0.8 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
Input Current, VIN High
IIH
VIN Under Test = 2.0 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
Input Capacitancee
CIN
f = 1 MHz
Room
2
Turn-On Time
tON
Room
Full
27
55
90
55
75
Turn-Off Time
tOFF
RL = 300 Ω, CL = 35 pF
VS = ± 3 V, see Figure 1
Room
Full
16
35
50
35
45
Break-Before-Make
Time Delay
tBBM
DG613A only, VS = 3 V
RL = 300 Ω, CL = 35 pF
Room
Full
15
Charge Injectione
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
1
Isolatione
OIRR
Room
- 62
Room
- 90
Room
720
Room
2
On-Resistance
On-Resistance Match
On-Resistance Flatness
Switch Off
Leakage Current
ID(off)
Switch On
Leakage Current
Ω
nA
Digital Control
µA
pF
Dynamic Characteristics
Off
Channel-to-Channel
Crosstalke
3 dB Bandwidthe
e
XTALK
RL = 50 Ω, CL = 5 pF
f = 10 MHz
BW
RL = 50 Ω, CL = 5 pF
2
2
pC
dB
MHz
Source Off Capacitance
CS(off)
Drain Off Capacitancee
CD(off)
Room
3
e
CD(on)
f = 1 MHz; VS = VD = 0 V
Room
9
THD
Signal = 1 VRMS, 20 Hz to 20 kHz,
RL = 600 Ω
Room
0.01
Room
Full
0.001
Room
Full
- 0.001
- 0.1
-1
- 0.1
-1
Room
Full
- 0.001
- 0.1
-1
- 0.1
-1
Drain On Capacitance
Total Harmonic
Distortione
f = 1 MHz; VS = 0 V
ns
pF
%
Power Supplies
Power Supply Current
I+
Negative Supply Current
I-
Ground Current
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4
IGND
V+ = + 5 V, V- = - 5 V
VIN = 0 or 5 V
0.1
1
0.1
1
µA
Document Number: 69904
S-72760-Rev. A, 04-Feb-08
New Product
DG611A/DG612A/DG613A
Vishay Siliconix
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
V+ = + 5 V, V- = 0 V
- 40 to 125 °C
Test Conditions
Unless Specified
V+ = + 5 V, V- = 0 V
Parameter
Symbol
VIN = 2.0 V, 0.8 Va
Temp.b
Typ.c
- 40 to 85 °C
Min.d
Max.d
Min.d
Max.d
Unit
0
5
0
5
V
Analog Switch
Analog Signal Rangee
VANALOG
Full
rON
V+ = + 5 V, V- = 0 V
IS = 1 mA, VD = + 3.5 V
Room
Full
139
180
235
180
215
ΔrON
V+ = + 5 V, V- = 0 V,
IS = 1 mA, VD = + 3.5 V
Room
Full
1
6
10
6
9
rFLATNESS
V+ = + 5 V, V- = 0 V,
IS = 1 mA, VD = 0 V, + 3.5 V
Room
Full
56
80
120
80
110
V+ = 5.5 V, V- = 0 V
VD = 4.5 V/1 V
VS = 1 V/4.5 V
Room
Full
± 0.02
- 0.1
-2
0.1
2
- 0.1
- 0.25
0.1
0.25
Room
Full
± 0.02
- 0.1
-2
0.1
2
- 0.1
- 0.25
0.1
0.25
ID(on)
V+ = 5.5 V, V- = 0 V
VD = VS = 1 V/4.5 V
Room
Full
± 0.02
- 0.1
-6
0.1
6
- 0.1
- 0.25
0.1
0.25
Input Current, VIN Low
IIL
VIN Under Test = 0.8 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
Input Current, VIN High
IIH
VIN Under Test = 2.0 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
Input Capacitancee
CIN
f = 1 MHz
Room
2
Turn-On Timee
tON
Room
Full
33
60
100
60
90
Turn-Off Timee
tOFF
RL = 300 Ω, CL = 35 pF
VS = 3 V, see Figure 1
Room
Full
16
35
50
35
45
Room
Full
19
On-Resistance
On-Resistance Match
On-Resistance Flatness
IS(off)
Switch Off
Leakage Current
ID(off)
Switch On
Leakage Current
Ω
nA
Digital Control
µA
pF
Dynamic Characteristics
tBBM
DG613A only, VS = 3 V
RL = 300 Ω, CL = 35 pF
Injectione
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
e
OIRR
Break-Before-Makee
Time Delay
Charge
Off Isolation
Channel-to-Channel
Crosstalke
3 dB Bandwidthe
Source Off
Capacitancee
2
Full
2.3
Room
- 61
2
pC
XTALK
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Room
- 90
BW
RL = 50 Ω, CL = 5 pF
Room
675
Room
3
Room
5
Room
9
Room
Full
0.001
Room
Full
- 0.001
- 0.1
-1
- 0.1
-1
Room
Full
- 0.001
- 0.1
-1
- 0.1
-1
CS(off)
Drain Off Capacitance
e
CD(off)
Drain On Capacitance
e
CD(on)
f = 1 MHz; VS = 0 V
f = 1 MHz; VS = VD = 0 V
ns
dB
MHz
pF
Power Supplies
Power Supply Current
I+
Negative Supply Current
I-
Ground Current
Document Number: 69904
S-72760-Rev. A, 04-Feb-08
IGND
VIN = 0 or 5 V
0.1
1
0.1
1
µA
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5
New Product
DG611A/DG612A/DG613A
Vishay Siliconix
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
Parameter
V+ = + 3 V, V- = 0 V
- 40 to 125 °C
- 40 to 85 °C
Test Conditions
Unless Specified
V+ = + 3 V, V- = 0 V
VIN = 1.4 V, 0.6 Va
Temp.b
VANALOG
Full
rON
IS = 1 mA, VD = + 1.5 V
Room
Full
195
IS(off)
V+ = 3.3 V, V- = 0 V
VD = 3 V/0.3 V
VS = 0.3 V/3 V
Room
Full
± 0.02
- 0.1
-2
0.1
2
- 0.1
- 0.25
0.1
0.25
Room
Full
± 0.02
- 0.1
-2
0.1
2
- 0.1
- 0.25
0.1
0.25
ID(on)
V+ = 3.3 V, V- = 0 V
VD = VS = 0.3 V/3 V
Room
Full
± 0.02
- 0.1
-6
0.1
6
- 0.1
- 0.25
0.1
0.25
Symbol
Typ.c
Min.d
Max.d
Min.d
3
0
Max.d
Unit
3
V
235
280
Ω
Analog Switch
Analog Signal Rangee
On-Resistance
Switch Off
Leakage Current
ID(off)
Switch On
Leakage Current
0
235
300
nA
Digital Control
Input Current, VIN Low
IIL
VIN Under Test = 0.6 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
Input Current, VIN High
IIH
VIN Under Test = 1.4 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
Input Capacitancee
CIN
f = 1 MHz
Room
2
Turn-On Time
tON
Room
Full
87
125
180
125
170
Turn-Off Time
tOFF
RL = 300 Ω, CL = 35 pF
VS = 2 V, see Figure 1
Room
Full
33
55
65
55
60
Break-Before-Make
Time Delay
tBBM
DG613 only, VS = 2 V
RL = 300 Ω, CL = 35 pF
Room
Full
60
Q
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
2.3
Room
- 60
Room
- 90
µA
pF
Dynamic Characteristics
Charge Injectione
Off Isolation
e
OIRR
Channel-to-Channel
Crosstalke
3 dB Bandwidthe
Source Off
Capacitancee
XTALK
RL = 50 Ω, CL = 5 pF
f = 10 MHz
BW
RL = 50 Ω, CL = 5 pF
CS(off)
Drain Off Capacitancee
CD(off)
e
CD(on)
Drain On Capacitance
f = 1 MHz; VS = 0 V
f = 1 MHz; VS = VD = 0 V
10
ns
10
pC
dB
Room
550
Room
5
MHz
Room
6
Room
9
Room
Full
0.001
Room
Full
- 0.001
- 0.1
-1
- 0.1
-1
Room
Full
- 0.001
- 0.1
-1
- 0.1
-1
pF
Power Supplies
Power Supply Current
I+
Negative Supply Current
I-
Ground Current
IGND
VIN = 0 or 3 V
0.1
1
0.1
1
µA
Notes:
a. VIN = input voltage to perform proper function.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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6
Document Number: 69904
S-72760-Rev. A, 04-Feb-08
New Product
DG611A/DG612A/DG613A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
600
V+ = 2.7 V
V± = ± 2.7 V
V± = ± 5 V
500
rON - On-Resistance (Ω)
rON - On-Resistance (Ω)
200
150
100
50
200
-4
-2
0
2
4
6
8
0
2
6
8
12
VCOM (VD ) - Analog Voltage (V)
On-Resistance vs. VD (Single Supply)
200
180
180
160
160
140
120
+ 125 °C
+ 85 °C
100
80
60
14
140
120
+ 125 °C
+ 85 °C
100
80
60
40
+ 25 °C
- 40 °C
20
20
+ 25 °C
- 40 °C
0
-6
-4
-2
0
2
4
6
0
8
2
6
8
10
12
14
On-Resistance vs. Temperature (Single Supply)
10000
1000
1000
ID (on)
100
V+ = 6.2 V
V- = - 6.2 V
Leakage Current (pA)
10000
IS (off)
4
VCOM (VD) - Analog Voltage (V)
VCOM (VD) - Analog Voltage (V)
On-Resistance vs. Temperature (Dual Supply)
ID (on)
100
IS (off)
V+ = 13.2 V
V- = 0 V
10
10
ID (off)
ID (off)
1
- 40
10
On-Resistance vs. VD (Dual Supply)
40
Leakage Current (pA)
4
VCOM (VD) - Analog Voltage (V)
200
0
-8
V+ = 13.2 V
V+ = 5 V
0
-6
rON - On-Resistance (Ω)
rON - On-Resistance (Ω)
V+ = 3 V
300
100
V± = ± 6.2 V
0
-8
400
- 20
0
20
40
60
80
100
Temperature (°C)
Leakage Current vs. Temperature
Document Number: 69904
S-72760-Rev. A, 04-Feb-08
120
1
- 40
- 20
0
20
40
60
80
100
120
Temperature (°C)
Leakage Current vs. Temperature
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New Product
DG611A/DG612A/DG613A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
45
2.5
CL = 1nF
V+ = 3 V
40
t ON , tOFF - Switching Time (ns)
Q - Charge Injection (pC)
2.0
V+ = 5 V
1.5
1.0
V± = ± 5 V
0.5
35
tON V± = ± 5 V
30
25
20
15
tOFF V± = ± 5 V
10
5
0.0
-6
-4
-2
0
2
Analog Voltage (V)
4
0
- 40
6
0
20
40
60
Temperature (°C)
80
100
120
Switching Time vs. Temperature (Dual Supply)
Charge Injection vs. Analog Voltage
0
200
- 10
180
tON V+ = 3 V
160
140
120
100
tON V+ = 5 V
80
tOFF V+ = 5 V
60
Loss
- 20
Loss, OIRR, X TALK (dB)
t ON , tOFF - Switching Time (ns)
- 20
tOFF V+ = 3 V
40
- 30
- 40
- 50
OIRR
- 60
- 70
XTalk
- 80
- 90
- 100
20
V+ = 5.0 V
V- = - 5.0 V
R L = 50 Ω
- 110
0
- 40
- 20
0
20
40
60
80
Temperature (°C)
100
- 120
100K
120
Switching Time vs. Temperature (Single Supply)
1M
10M
Frequency (Hz)
100M
1G
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
10 mA
3.0
- 40 °C to + 125 °C
1 mA
100 µA
2.0
Supply Current
VIN - Switching Threshold (V)
2.5
1.5
10 µA
1 µA
I100 nA
IGND
10 nA
1.0
1 nA
V+ = 5 V
V- = - 5 V
I+
0.5
100 pA
10 pA
0.0
0
2
4
6
8
10
V+ Supply Voltage (V)
12
Switching Threshold vs. Supply Voltage
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8
14
10
100
1K
10K
100K
1M
10M
Switching Frequency (Hz)
Supply Current vs. Switching Frequency
Document Number: 69904
S-72760-Rev. A, 04-Feb-08
New Product
DG611A/DG612A/DG613A
Vishay Siliconix
TEST CIRCUITS
+5V
tr < 5 ns
tf < 5 ns
3V
Logic
Input
50 %
0V
V+
VS
S
tOFF
D
Switch
Input*
VO
VS
VO
IN
V-
GND
CL
35 pF
RL
300 Ω
90 %
90 %
0V
tON
- 5V
Note:
CL (includes fixture and stray capacitance)
Logic input waveform is inverted for switches that
have the opposite logic sense control
RL
VO = V S
RL + rDS(on)
Figure 1. Switching Time
+5V
3V
Logic
Input
50 %
V+
VS1
S1
D1
VO1
IN1
VS2
Switch
Output
IN2
RL1
300 Ω
V-
GND
90 %
VO2
D2
S2
0V
VS1
VO1
RL2
300 Ω
CL2
35 pF
0V
VS2
VO2
CL1
35 pF
0V
Switch
Output
90 %
tD
tD
-5V
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make (DG613A)
ΔVO
+5V
Rg
INX
V+
S
ON
OFF
VO
CL
1 nF
3V
GND
OFF
D
IN
Vg
VO
V-
INX
OFF
ON
Q = ΔVO x CL
OFF
-5V
Figure 3. Charge Injection
Document Number: 69904
S-72760-Rev. A, 04-Feb-08
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9
New Product
DG611A/DG612A/DG613A
Vishay Siliconix
TEST CIRCUITS
+5V
C
V+
D1
S1
VS
Rg = 50 Ω
50 Ω
IN1
0 V, 2.4 V
S2
D2
VO
NC
0 V, 2.4 V
RL
IN2
GND
XTALK Isolation = 20 log
V-
C
VO
-5V
VS
C = RF bypass
Figure 4. Crosstalk
+5V
+5V
C
V+
S
VS
C
VO
D
V+
Rg = 50 Ω
0 V, 2.4 V
S
RL
50 Ω
IN
GND
V-
Meter
IN
C
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
D
-5V
Off Isolation = 20 log
GND
V-
C
VO
VS
C = RF Bypass
Figure 5. Off-Isolation
-5V
Figure 6. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69904.
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10
Document Number: 69904
S-72760-Rev. A, 04-Feb-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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