IXYS DSA50C150HB High performance schottky diode low loss and soft recovery common cathode Datasheet

DSA 50 C 150 HB
advanced
V RRM =
150 V
I FAV = 2x 25 A
V F = 0.74 V
Schottky Diode
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
1
2
3
DSA 50 C 150 HB
Backside: cathode
Features / Advantages:
Applications:
Package:
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Housing: TO-247
Symbol
Definition
Conditions
VRRM
max. repetitive reverse voltage
IR
reverse current
VF
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
forward voltage
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
virtual junction temperature
typ.
max.
Unit
150
VR = 150 V
0.5
µA
VR = 150 V
TVJ = 125 °C
5
mA
IF =
TVJ = 25 °C
0.88
V
1.02
V
0.74
V
25 A
IF =
50 A
IF =
25 A
IF =
50 A
rectangular, d = 0.5
for power loss calculation only
T VJ
min.
TVJ = 25 °C
TVJ = 25 °C
TVJ = 125 °C
V
0.90
V
TC = 155°C
25
A
TVJ = 175°C
0.53
V
5.8
0.95
mΩ
K/W
175
°C
-55
Ptot
total power dissipation
TC = 25 °C
160
W
I FSM
max. forward surge current
t = 10 ms (50 Hz), sine
TVJ = 45°C
200
A
CJ
junction capacitance
VR = tbd V; f = 1 MHz
TVJ = 25 °C
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
tbd
pF
0629
DSA 50 C 150 HB
advanced
Ratings
Symbol
Definition
min.
Conditions
I RMS
RMS current
RthCH
thermal resistance case to heatsink
Tstg
storage temperature
per pin
max.
Unit
50
0.25
-55
Weight
A
K/W
150
°C
6
MD
mounting torque
FC
mounting force with clip
1)
typ.
1)
0.8
20
g
1.2
120
Nm
N
IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Product Marking
Part number
Logo
Marking on product
DateCode
Assembly Code
Ordering
Standard
XXXXXX
Part Name
DSA 50 C 150 HB
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
D
S
A
50
150
C
HB
abcdef
YYWW
Marking on Product
DSA50C150HB
Delivering Mode
Tube
=
=
=
=
=
=
Diode
Schottky Diode
low VF
Current Rating [A]
Reverse Voltage [V]
TO-247AD (3)
Base Qty Code Key
Data according to IEC 60747and per diode unless otherwise specified
0629
DSA 50 C 150 HB
advanced
Outlines TO-247
Symbol
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
ØP1
Inches
min
max
0.185
0.209
0.087
0.102
0.059
0.098
0.819
0.845
0.610
0.640
0.170
0.216
0.215 BSC
0.780
0.800
0.177
0.140
0.144
0.212
0.244
0.242 BSC
0.039
0.055
0.065
0.094
0.102
0.135
0.015
0.035
0.515
0.020
0.053
0.530
0.291
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
Millimeters
min
max
4.70
5.30
2.21
2.59
1.50
2.49
20.79
21.45
15.48
16.24
4.31
5.48
5.46 BSC
19.80
20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
Data according to IEC 60747and per diode unless otherwise specified
0629
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