TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=37.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB SYMBOL CONDITION P1dB MIN. TYP. MAX. UNIT 37.0 37.5 dBm 6.0 7.0 dB Compression Point Power Gain at 1dB G1dB VDS= 9V f =10.7-11.7GHz Compression Point Drain Current IDS1 2.0 2.5 A Power Added Efficiency ηadd 23 % 3rd Order Intermodulation IM3 -42 -45 dBc Two Tone Test Distortion P=26dBm Drain Current IDS2 (Single Carrier Level) 2.0 2.5 A Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c) 80 °C ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO CONDITION VDS= 3V IDS=2.4A VDS= 3V IDS= 72mA VDS= 3V VGS= 0V IGS= -72µA Rth(c-c) Channel to Case Pinch-off Voltage Thermal Resistance SYMBOL gm VGSoff MIN. TYP. MAX. UNIT 1400 mS -2.0 -3.5 -5.0 V 5.0 5.7 A -5 V 3.0 3.7 °C/W ♦The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. TOSHIBA CORPORATION Apr. 2000 TIM1011-5L ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL RATING UNIT Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V Drain Current IDS 5.7 A Total Power Dissipation (Tc= 25 °C) PT 30 W Channel Temperature Tch 175 °C Storage Tstg -65 ∼ +175 °C c d 0.5± ±0.15 3.2MAX 0.2MAX 8.5 MAX. 1.2± ±0.3 1.8± ±0.3 +0.1 13.0± ±0.3 17.0 MAX. 0.1 -0.05 e cGate dSource eDrain 2.0MIN 2.5± ±0.3 d Unit : mm 9.7± ±0.3 4-R2.4 2.0MIN. PACKAGE OUTLINE (2-9D1B) HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260° 260°C. 2 TIM1011-5L Output Power vs. Frequency 41 39 38 37 36 35 9.7 10.2 10.7 11.2 11.7 Frequency (GHz) 12.2 12.7 Output Power vs. Input Power 41 90 f = 11.7 GHz 80 VDS = 9 V 39 70 IDS ≅ 2.0 A 38 60 37 50 36 40 35 30 34 20 33 10 32 0 25 27 29 31 Pin (dBm) 3 33 35 ηadd (%) 40 Po (dBm) Po (dBm) 40 VDS= 9V VDS= VDS = 9 V9V IDS= 2.0A IDS≒ 2.0A 2.0 A IDS ≅ Pin= 31.5dBm Pin= 31.5dBm Pin = 30.5 dBm TIM1011-5L POWER DISSIPATION vs. CASE TEMPERATURE 50 40 PT (W) 30 20 10 0 0 40 80 120 160 200 Tc (℃) IM3 vs. OUTPUT POWER CHARACTERISTICS -10 VDS= 9V IDS≅ ≅ 2.0A f=11.2 GHz ∆f= 5MHz IM3 (dBc) -20 -30 -40 -50 -60 22 24 26 28 Po (dBm), Single Carrier Po(dBm), Single Carrier 4 30 32 TIM1011-5L TIM11011-5L S-PARAMETERS (MAGN. and ANGLES) VDS=9V, IDS=2.0A f=10.2 – 12.2GHz FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 10.2 0.78 -147 2.06 -18 0.031 -69 0.46 -170 10.4 0.74 -159 2.22 -34 0.047 -87 0.44 170 10.6 0.67 -173 2.42 -52 0.066 -105 0.41 147 10.8 0.58 171 2.61 -71 0.085 -124 0.38 120 11.0 0.46 154 2.76 -92 0.106 -144 0.35 88 11.2 0.31 134 2.83 -114 0.123 -164 0.34 54 11.4 0.15 106 2.81 -136 0.135 176 0.34 20 11.6 0.05 -1 2.70 -157 0.141 156 0.35 -11 11.8 0.16 -73 2.53 -178 0.144 138 0.35 -37 12.0 0.26 -96 2.33 163 0.141 120 0.35 -61 12.2 0.34 -115 2.14 144 0.136 103 0.35 -82 5