EMLSI EM610FV16CW-12S 512k x8 bit super low power and low voltage full cmos static ram Datasheet

merging Memory & Logic Solutions Inc.
EM640FP8 Series
Low Power, 512Kx8 SRAM
Document Title
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
History
Draft Date
0.0
Initial Draft
October 24,2002
0.1
2’nd Draft
Changed Icc, Icc1 value
November 11 , 2002
0.2
3’rd Draft
Changed I SB1 test conditions,
December 23 , 2002
Remark
Preliminary
Changed VDR & IDR
measurement condition
0.3
4’th Draft
Add Pb-free part number
February 13 , 2004
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160
Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM640FP8 Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
FEATURES
GENERAL DESCRIPTION
•
•
•
•
•
•
The EM640FP8 families are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The families also supports low data retention voltage for battery
back-up operation with low data retention current.
Process Technology : 0.18µm Full CMOS
Organization : 512K x 8 bit
Power Supply Voltage : 1.65V ~ 2.2V
Low Data Retention Voltage : 1.0V(Min)
Three state outputs
Package Type : 36-FPBGA 6.0x7.0
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
EM640FP8
Industrial (-40 ~ 85o C)
Vcc Range
Speed
Standby
(I SB1 , Typ)
Operating
(I CC1.Max)
1.65~2.2V
70ns 1 )
1 µA
2 mA
PKG Type
36 FPBGA
(6.0x7.0)
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
5
6
A
A0
A1
CS2
A3
A6
A8
B
I/O 5
A2
WE
A4
A7
I/O1
Pre-charge Circuit
I/O 6
D
V SS
VCC
E
VC C
V SS
DNU
A5
VCC
Row S elect
C
A0
A1
A2
A3
A4
A5
A6
A7
I/O2
I/O 7
G
I/O 8
H
A9
A18
A17
OE
CS1
A16
A15
I/O4
A10
A11
A12
A13
A14
I/O1 ~ I/O4
OE
CS1
CS 1 ,CS 2
OE
A 0 ~A18
I/O1 ~I/O 8
Name
Function
Chip select inputs
WE
Write Enable input
Output Enable input
Vcc
Power Supply
Address Inputs
Vss
Ground
Data Inputs/outputs
DNU
Do Not Use
I/O Circuit
Column Select
A11 A12 A13 A14 A15 A16 A17 A18
WE
Function
Data
Cont
Data
Cont
I/O3
36-FPBGA : Top view (ball down)
Name
2048 x 2048
A8
A9
A10
I/O5 ~ I/O8
F
VSS
Memory Array
CS2
2
Control Logic
EM640FP8 Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
ABSOLUTE MAXIMUM RATINGS *
Parameter
Symbol
Ratings
Unit
VIN , VOUT
-0.5V to VCC+0.3V (Max.2.5V)
V
VCC
-0.3V to 2.5V
V
Power Dissipation
PD
1.0
W
Operating Temperature
TA
-40 to 85
oC
Voltage on Any Pin Relative to Vss
Voltage on Vcc supply relative to Vss
* Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
FUNCTIONAL DESCRIPTION
CS 1
CS 2
OE
WE
I/O
Mode
Power
H
X
X
X
High-Z
Deselected
Stand by
X
L
X
X
High-Z
Deselected
Stand by
L
H
H
H
High-Z
Output Disabled
Active
L
H
L
H
Data Out
Read
Active
L
H
X
L
Data In
Write
Active
Note: X means don’t care. (Must be low or high state)
3
EM640FP8 Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
1.
2.
3.
4.
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
1.65
1.8
2.2
V
Ground
VSS
0
0
0
V
Input high voltage
VIH
1.4
-
VCC + 0.32)
V
Input low voltage
VIL
-0.3 3)
-
0.4
V
TA= -40 to 85oC, otherwise specified
Overshoot: V CC +1.0 V in case of pulse width < 20ns
Undershoot: -1.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE 1) (f =1MHz, TA=25oC)
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C IN
VIN=0V
-
8
pF
Input/Ouput capacitance
CIO
VIO =0V
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
V IN = VSS to V CC
-1
-
1
µA
Output leakage current
ILO
CS 1 =VIH , CS2 =V IL or OE=V IH or WE=V IL, V IO =VSS to VCC
-1
-
1
µA
Operating power supply
I CC
IIO =0mA, CS 1 = VIL , CS 2= W E=VIH , V IN=V I H or V IL
-
-
2
mA
-
-
2
-
-
12
mA
Cycle time=1µs, 100% duty, I IO =0mA,
ICC1
Average operating current
CS 1 <0.2V, CS2 >V CC-0.2V,
V IN <0.2V or V IN >V CC-0.2V
mA
ICC2
Cycle time = Min, I IO =0mA, 100% duty,
CS 1 = VIL , CS 2=V IH, V IN = VIL or V I H
Output low voltage
VOL
IOL = 0.1mA
-
-
0.2
V
Output high voltage
VOH
IOH = -0.1mA
1.4
-
-
V
ISB1
CS 1 >V CC -0.2V, CS 2 >V CC-0.2V (CS 1 controlled)
or 0V< CS2 <0.2V (CS 2 controlled),
Other inputs=0 ~ VCC
-
1
5
µA
Standby Current (CMOS)
(Typ. condition : VCC=1.8V @ 25 o C)
(Max. condition : VCC =2.2V @ 85o C)
4
70ns
LL
LF
EM640FP8 Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
VTM 3)
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
R12)
Input Pulse Level : 0.2V to VCC-0.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 0.9V
Output Load (See right) : CL = 100pF+ 1 TTL
R22)
CL1)
CL 1) = 30pF + 1 TTL
1. Including scope and Jig capacitance
2. R1 =3070Ω,
R 2 =3150Ω
3. VTM=1.8V
READ CYCLE (V cc =1.65 to 2.2V, Gnd = 0V, T A = -40oC to +85oC)
Parameter
70ns
Symbol
Min
Max
Unit
Read cycle time
tRC
70
-
ns
Address access time
tAA
-
70
ns
Chip select to output
tco1, tco2
-
70
ns
tO E
-
35
ns
tLZ1, tLZ2
10
-
ns
tOLZ
5
-
ns
tHZ1, tHZ2
0
25
ns
Output disable to high-Z output
tOHZ
0
25
ns
Output hold from address change
tOH
10
-
ns
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
WRITE CYCLE (Vcc =1.65 to 2.2V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
70ns
Symbol
Unit
Min
Max
tWC
70
-
ns
tCW1, tCW2
60
-
ns
Address setup time
tAs
0
-
ns
Address valid to end of write
tAW
60
-
ns
Write pulse width
tWP
55
-
ns
Write recovery time
tWR
0
-
ns
Write to ouput high-Z
tWHZ
0
25
ns
Data to write time overlap
tDW
30
Data hold from write time
tDH
0
-
ns
End write to output low-Z
tOW
5
-
ns
Write cycle time
Chip select to end of write
5
ns
EM640FP8 Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1).
(Address Controlled, CS1=OE=VIL, CS2 =WE=V IH )
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH)
tRC
Address
tAA
tOH
tCO
CS 1
CS 2
tHZ
tOE
OE
tOHZ
tOLZ
Data Out
High-Z
Data Valid
tLZ
NOTES (READ CYCLE)
1. t HZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels.
2. At any given temperature and voltage condition, t HZ(Max.) is less than t LZ(Min.) both for a given device and from device to device
interconnection.
6
EM640FP8 Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)
tWC
Address
tCW (2)
tWR (4)
CS 1
CS 2
tAW
tWP (1)
WE
tAS(3)
Data in
tDH
tDW
High-Z
High-Z
Data Valid
tWHZ
Data out
tOW
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 CONTROLLED)
tWC
Address
tAS(3)
tCW (2)
tWR (4)
CS 1
CS 2
tAW
tWP (1)
WE
tDW
Data in
Data out
Data Valid
High-Z
High-Z
7
tDH
EM640FP8 Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
TIMING WAVEFORM OF WRITE CYCLE(3) ( CS2 CONTROLLED)
tWC
Address
tCW(2)
tW R(4)
CS 1
tAS(3)
CS 2
tAW
tW P(1)
WE
tDW
Data in
Data out
tDH
Data Valid
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP ) of low CS1, a high CS2 and low WE. A write begins at the latest
transition among CS1 goes low, CS2 goes high and WE goes low. A write ends at the earliest transition
when CS1 goes high, CS2 goes hagh and WE goes high. The t WP is measured from the beginning of write
to the end of write.
2. t CW is measured from the CS1 going low to end of write.
3. t A S is measured from the address valid to the beginning of write.
4. t WR is measured from the end or write to the address change. tWR applied in case a write ends as CS1 or WE
going high.
8
EM640FP8 Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
Symbol
VCC for Data Retention
VDR
Data Retention Current
I DR
Chip Deselect to Data Retention Time
tSDR
Operation Recovery Time
tRDR
Test Condition
ISB1 Test Condition
(Chip Disabled)
1)
VCC =1.2V, ISB1 Test Condition
(Chip Disabled) 1)
See data retention wave form
Min
Typ
Max
Unit
1.0
-
2.2
V
-
0.5
2
µA
0
-
-
t RC
-
-
ns
NOTES
1. See the IS B 1 measurement condition of datasheet page 4.
DATA RETENTION WAVE FORM
CS1 Controlled
tSDR
Data Retention Mode
tRDR
Vcc
1.65V
1.4V
VDR
CS 1 > Vcc-0.2V
CS1
GND
CS2 Controlled
Vcc
1.65V
CS 2
Data Retention Mode
tRDR
tSDR
VDR
0.4V
CS 2 < 0.2V
GND
9
EM640FP8 Series
merging Memory & Logic Solutions Inc.
Low Power, 512Kx8 SRAM
Unit: millimeters
PACKAGE DIMENSION
36 Ball Fine Pitch BGA (0.75mm ball pitch)
Bottom View
Top View
A1 index Mark
B
B1
6
5
4
3
0.5
0.5
B
2 1
A
B
#A1
C
C1
C
C
D
C1/2
E
F
G
H
B/2
E2
0.26
Side View
Detail A
D
0.25 Typ.
E
E1
A
Min
Typ
Max
A
-
0.75
-
B
5.95
6.00
6.05
B1
-
3.75
-
C
6.95
7.00
7.05
C1
-
5.25
-
D
0.30
0.35
0.40
E
1.00
1.04
1.10
E1
-
0.79
-
E2
-
0.25
-
Y
-
-
0.08
0.79Typ.
C
Y
NOTES.
1. Bump counts : 36(8row x 6column)
2. Bump pitch : (x,y)=(0.75x0.75) (typ.)
3. All tolerence are +/-0.050 unless
otherwise specified.
4. Typ : Typical
5. Y is coplanarity : 0.08(Max)
10
merging Memory & Logic Solutions Inc.
EM640FP8 Series
Low Power, 512Kx8 SRAM
MEMORY FUNCTION GUIDE
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
11. Power
2. Device Type
10. Speed
3. Density
4. Option
9. Packages
5. Technology
8. Version
6. Operating Voltage
7. Orgainzation
1. Memory Component
8. Version
Blank ----------------- Mother Die
A ----------------------- First revision
B ----------------------- Second revision
C ----------------------- Third revision
D ----------------------- Fourth revision
2. Device Type
6 ------------------------ Low Power SRAM
7 ------------------------ STRAM
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
16 ----------------------- 16M
32 ----------------------- 32M
64 ----------------------- 64M
9. Package
Blank ---------------------- Package
W --------------------- Wafer
10. Speed
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 --------------------- 100ns
12 --------------------- 120ns
4. Option
0 ----------------------- Dual CS
1 ----------------------- Single CS
5. Technology
Blank ------------------ CMOS
F ------------------------ Full CMOS
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power(Pb-Free)
L ---------------------- Low Power
S ---------------------- Standard Power
6. Operating Voltage
Blank ------------------- 5V
V ------------------------- 3.3V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
7. Orginzation
8 ---------------------- x8 bit
16 ---------------------- x16 bit
32 ---------------------- x32 bit
11
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