Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • • • • • Halogen-free Option Available TrenchFET® Power MOSFETs Very Small Footprint High-Side Switching Low On-Resistance: N-Channel, 1.40 Ω P-Channel, 4 Ω • Low Threshold: ± 2 V (typ.) • Fast Switching Speed: 15 ns (typ.) • Gate-Source ESD Protected: 2000 V RoHS COMPLIANT BENEFITS • • • • SC-89 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits APPLICATIONS Marking Code: H • Replace Digital Transistor, Level-Shifter • Battery Operated Systems • Power Supply Converter Circuits Top View Ordering Information: Si1029X-T1-E3 (Lead (Pb)-free) Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Drain TA = 25 °C TA = 85 °C Currentb TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS PD P-Channel Steady State 5s 60 Steady State - 60 320 230 305 - 200 220 - 145 650 Unit V ± 20 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID 5s - 190 - 135 - 650 450 380 - 450 - 380 280 250 280 250 145 130 145 130 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71435 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 Si1029X Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = 10 µA VGS = 0 V, ID = - 10 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 10 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS ID(on) RDS(on) gfs VSD VDS = 50 V, VGS = 0 V VDS = - 50 V, VGS = 0 V VDS = 50 V, VGS = 0 V, TJ = 85 °C VDS = - 50 V, VGS = 0 V, TJ = 85 °C VDS = 10 V, VGS = 4.5 V VDS = - 10 V, VGS = - 4.5 V VDS = 7.5 V, VGS = - 4.5 V VDS = - 10 V, VGS = - 10 V VGS = 4.5 V, ID = 200 mA VGS = - 4.5 V, ID = - 25 mA VGS = 10 V, ID = 500 mA VGS = - 10 V, ID = - 500 mA VGS = 10 V, ID = 500 mA, TJ = 125 °C VGS = - 10 V, ID = - 500 mA, TJ = 125 °C VDS = 10 V, ID = 200 mA VDS = - 10 V, ID = - 100 mA IS = 200 mA, VGS = 0 V IS = - 200 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 60 - 60 1 -1 2.5 - 3.0 ± 50 ± 100 ± 150 ± 200 10 - 25 100 - 250 500 - 50 800 - 600 V nA mA 3 8 1.40 4 2.50 6 200 100 Ω ms 1.4 - 1.4 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss N-Channel VDS = 10 V, VGS = 4.5 V, ID = 250 mA P-Channel VDS = - 30 V, VGS = - 15 V, ID = - 500 mA N-Channel VDS = 25 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 25 V, VGS = 0 V, f = 1 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 750 1700 75 260 225 460 30 23 6 10 3 5 Reverse Transfer Capacitance Crss 15 tON N-Channel VDD = 30 V, RL = 150 Ω ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω N-Ch Turn-On Timec P-Ch 20 N-Ch 20 tOFF P-Channel VDD = - 25 V, RL = 150 Ω ID ≅ - 165 mA, VGEN = - 10 V, RG = 10 Ω P-Ch 35 Turn-Off Timec pC pF ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71435 S-80643-Rev. B, 24-Mar-08 Si1029X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1200 1.0 6V TJ = - 55 °C VGS = 10 thru 7 V I D - Drain Current (A) I D - Drain Current (mA) 5V 0.8 0.6 4V 0.4 900 25 °C 125 °C 600 300 0.2 3V 0.0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 2 5 6 Transfer Characteristics 50 4.0 VGS = 0 V f = 1 MHz 3.5 40 3.0 C - Capacitance (pF) R DS(on) - On-Resistance ( ) 4 VGS - Gate-to-Source Voltage (V) Output Characteristics 2.5 VGS = 4.5 V 2.0 1.5 VGS = 10 V 30 Ciss 20 Coss 1.0 10 Crss 0.5 0 0.0 0 200 400 600 800 0 1000 5 I D - Drain Current (mA) 10 20 25 Capacitance 7 2.0 VGS = 10 V at 500 mA VDS = 10 V ID = 250 mA 5 4 3 2 (Normalized) 1.6 R DS(on) - On-Resistance 6 15 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 3 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 1 0 0.0 0.1 Document Number: 71435 S-80643-Rev. B, 24-Mar-08 0.2 0.3 0.4 0.5 0.6 0.0 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 Si1029X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1000 5 100 TJ = 125 °C 10 4 R DS(on) - On-Resistance ( ) I S - Source Current (A) VGS = 0 V TJ = 25 °C 3 2 ID = 500 mA ID = 200 mA 1 TJ = - 55 °C 0 1 0.00 0.3 0.6 0.9 1.2 0 1.5 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 µA 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature www.vishay.com 4 Document Number: 71435 S-80643-Rev. B, 24-Mar-08 Si1029X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1200 1.0 VGS = 10 V TJ = - 55 °C 7V 8V 900 I D - Drain Current (mA) I D - Drain Current (A) 0.8 6V 0.6 0.4 5V 25 °C 125 °C 600 300 0.2 4V 0.0 0 0 1 2 3 4 5 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 40 20 16 32 C - Capacitance (pF) R DS(on) - On-Resistance ( ) VGS = 0 V VGS = 4.5 V 12 VGS = 5 V 8 VGS = 10 V 4 Ciss 24 16 Coss 8 Crss 0 0 0 200 400 600 800 0 1000 5 I D - Drain Current (mA) 10 25 Capacitance 15 1.8 ID = 500 mA 1.5 12 VDS = 48 V 9 6 3 VGS = 10 V at 500 mA 1.2 (Normalized) VDS = 30 V R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 20 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0 0.0 15 VGS = 4.5 V at 25 mA 0.9 0.6 0.3 0.3 Document Number: 71435 S-80643-Rev. B, 24-Mar-08 0.6 0.9 1.2 1.5 1.8 0.0 - 50 - 25 0 25 50 75 100 125 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 5 Si1029X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1000 10 100 TJ = 125 °C 10 8 R DS(on) - On-Resistance ( ) I S - Source Current (A) VGS = 0 V TJ = 25 °C ID = 500 mA 6 4 ID = 200 mA 2 TJ = - 55 °C 0 1 0.00 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.5 0.4 ID = 250 µA VGS(th) Variance (V) 0.3 0.2 0.1 0.0 - 0.1 - 0.2 - 0.3 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage Variance Over Temperature www.vishay.com 6 Document Number: 71435 S-80643-Rev. B, 24-Mar-08 Si1029X Vishay Siliconix N- OR P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71435. Document Number: 71435 S-80643-Rev. B, 24-Mar-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1