AOSMD AON6920 30v dual asymmetric n-channel mosfet Datasheet

AON6920
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6920 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
RDS(ON) to reduce conduction losses. The AON6920 is well
suited for use in compact DC/DC converter applications.
VDS
Q1
30V
Q2
30V
85A
ID (at VGS=10V)
60A
RDS(ON) (at VGS=10V)
<5.2mΩ
<1.8mΩ
RDS(ON) (at VGS = 4.5V)
<7.8mΩ
<2.7mΩ
100% UIS Tested
100% Rg Tested
DFN5X6A
Top View
Bottom View
S2
S2
S2
G2
(S1/D2)
D1
D1
D1
G1
D1
Top View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Pulsed Drain Current C
C
Avalanche Energy L=0.1mH
C
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev 1 : April 2011
38
66
490
15
26.5
12
21
Steady-State
Steady-State
A
40
78
A
80
304
mJ
31
104
12.5
41.5
2
2.2
1.3
1.4
TJ, TSTG
Symbol
t ≤ 10s
A
EAS, EAR
PDSM
TA=70°C
V
IAS, IAR
PD
TC=100°C
Units
V
85
200
IDSM
TA=70°C
Avalanche Current
±20
60
IDM
TA=25°C
Max Q2
30
ID
TC=100°C
Continuous Drain
Current
Max Q1
VGS
TC=25°C
Continuous Drain
CurrentG
Bottom View
RθJA
RθJC
-55 to 150
Typ Q1
25
50
3.1
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Typ Q2
20
45
0.9
Max Q1 Max Q2
30
25
60
55
4
1.2
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 10
AON6920
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
200
100
nA
2.3
V
4.3
5.2
6.6
8
VGS=4.5V, ID=20A
6.2
7.8
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
70
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
mΩ
mΩ
S
1
V
30
A
1040
1300
1560
pF
VGS=0V, VDS=15V, f=1MHz
370
530
690
pF
10
35
60
pF
VGS=0V, VDS=0V, f=1MHz
0.8
1.7
2.6
Ω
17
21.0
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
µA
1.7
VGS=10V, ID=20A
Output Capacitance
Units
V
1
IGSS
Coss
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
13
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
nC
7.2
nC
3.9
nC
1.8
nC
5
ns
16
ns
20
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
16
21
4
26
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
31
39
47
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: April 2011
www.aosmd.com
Page 2 of 10
AON6920
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
VDS=5V
4V
10V
100
80
4.5V
6V
60
ID(A)
ID (A)
80
60
40
40
3V
125°C
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
7
Normalized On-Resistance
1.8
VGS=4.5V
6
RDS(ON) (mΩ )
4
5
VGS=10V
4
3
VGS=10V
ID=20A
1.6
1.4
17
5
VGS=4.5V
ID=20A 2
1.2
10
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
12
25
50
75
100
125
150
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
175
1.0E+02
ID=20A
1.0E+01
10
40
8
125°C
IS (A)
RDS(ON) (mΩ )
1.0E+00
6
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
25°C
4
1.0E-04
2
1.0E-05
3
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: April 2011
4
5
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 10
AON6920
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
VDS=15V
ID=20A
8
Ciss
Capacitance (pF)
VGS (Volts)
1500
6
4
1000
Coss
500
2
Crss
0
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
1000.0
10µs
RDS(ON)
limited
800
10.0
1ms
DC
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
600
400
200
0
0.0001
0.0
0.01
TJ(Max)=150°C
TC=25°C
100us
Power (W)
100.0
ID (Amps)
0
20
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: April 2011
www.aosmd.com
Page 4 of 10
AON6920
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
30
TA=100°C
TA=25°C
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=125°C
TA=150°C
25
20
15
10
5
0
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
70
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
TA=25°C
60
1000
50
17
5
2
10
Power (W)
Current rating ID(A)
150
40
100
30
20
10
10
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
Rev 1: April 2011
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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100
1000
Page 5 of 10
AON6920
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
490
100
nA
2.3
V
1.5
1.8
2.2
2.8
VGS=4.5V, ID=20A
2.05
2.7
mΩ
1
V
85
A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
110
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
mΩ
S
3200
4000
4800
pF
VGS=0V, VDS=15V, f=1MHz
1100
1680
2200
pF
20
65
110
pF
VGS=0V, VDS=0V, f=1MHz
0.3
0.7
1.1
Ω
52
63
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
µA
1.7
VGS=10V, ID=20A
Output Capacitance
Units
V
1
IGSS
Coss
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
41
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
nC
23
nC
9
nC
6
nC
7
ns
17
ns
33
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
18
23
7
28
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
60
75
90
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: April 2011
www.aosmd.com
Page 6 of 10
AON6920
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
VDS=5V
3V
100
80
4.5V
80
60
ID(A)
ID (A)
3.5V
60
40
40
125°C
VGS=2.5V
20
20
25°C
0
0
0
1
2
3
4
1.5
5
2.5
2.5
3
Normalized On-Resistance
1.8
VGS=4.5V
RDS(ON) (mΩ )
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2.0
VGS=10V
1.5
VGS=10V
ID=20A
1.6
1.4
17
VGS=4.5V
5
ID=20A
1.2
2
10
1
0.8
1.0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
6
1.0E+02
ID=20A
1.0E+01
5
40
1.0E+00
3
IS (A)
RDS(ON) (mΩ )
4
125°C
125°C
1.0E-01
25°C
1.0E-02
2
1.0E-03
1
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: April 2011
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 10
AON6920
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6000
10
VDS=15V
ID=20A
Capacitance (pF)
6
VGS (Volts)
Ciss
5000
8
4
2
4000
3000
Coss
2000
1000
Crss
0
0
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
60
1000.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
1500
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
1200
100µs
10.0
1ms
DC
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
100.0
ID (Amps)
30
900
600
300
0
0.0001
0.0
0.01
0.1
1
VDS (Volts)
10
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.2°C/W
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: April 2011
www.aosmd.com
Page 8 of 10
AON6920
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
TA=125°C
100
TA=150°C
80
60
40
20
0
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
100
TA=25°C
80
1000
60
Power (W)
Current rating ID(A)
150
40
20
17
5
2
10
100
10
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0
0.00001
0.001
10 18
1000
Pulse 0.1
Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
Rev 1: April 2011
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
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1000
Page 9 of 10
AON6920
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: April 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 10 of 10
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