SUM75N15-18P Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch • Power Supplies D TO-263 G G D S Top View S Ordering Information: SUM75N15-18P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current Single Avalanche Energya L = 0.1 mH TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc V 75d 70 A 180 IAS 50 EAS 125 PD Unit 312.5 mJ b 3.12 W TJ, Tstg - 55 to 150 °C Symbol Limit Unit RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 69995 S-82349-Rev. B, 22-Sep-08 www.vishay.com 1 SUM75N15-18P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 4.5 ± 250 VDS = 150 V, VGS = 0 V 1 VDS = 150 V, VGS = 0 V, TJ = 125 °C 50 VDS = 150 V, VGS = 0 V, TJ = 150 °C 250 VDS ≥ 10 V, VGS = 10 V ID(on) RDS(on) 120 nA µA A VGS = 10 V, ID = 20 A 0.0148 0.018 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0296 0.036 VDS = 15 V, ID = 20 A 55 gfs V Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c Gate-Source Charge Qgs Gate-Drain Chargec Qgd VGS = 0 V, VDS = 75 V, f = 1 MHz Turn-On Delay Timec Rise Timec 64 VDS = 75 V, VGS = 10 V, ID = 85 A Fall Timec td(off) 100 nC 23 16 f = 1 MHz td(on) tr c pF 235 83 Rg Gate Resistance Turn-Off Delay Time 4180 VDD = 75 V, RL = 0.88 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 2.1 4.2 15 25 10 15 25 40 8 15 IS 75 ISM 180 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr ns °Cb Pulsed Current Continuous Current Ω IF = 50 A, dI/dt = 100 A/µs A 1.0 1.5 V 130 200 ns 8 12 A 520 1200 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69995 S-82349-Rev. B, 22-Sep-08 SUM75N15-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 180 VGS = 10 thru 7 V 50 I D - Drain Current (A) I D - Drain Current (A) 150 120 VGS = 6 V 90 60 30 40 30 TC = 25 °C 20 TC = 125 °C 10 VGS = 5 V TC = - 55 °C 0 0 0 1 2 3 4 0 5 2 4 6 8 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 100 0.04 80 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 60 TC = 25 °C 40 TC = 125 °C 20 0 0.03 0.02 VGS = 10 V 0.01 0.00 0 8 16 24 32 0 40 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 0.10 6000 5000 0.08 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) ID = 20 A 0.06 TA = 150 °C 0.04 0.02 4000 3000 2000 Coss 1000 TA = 25 °C 0.00 Crss 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 69995 S-82349-Rev. B, 22-Sep-08 10 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUM75N15-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 10 ID = 20 A 8 VDS = 75 V 6 VDS = 120 V 4 2.0 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 85 A VGS = 10 V 1.5 1.0 2 0.5 - 50 0 0 20 40 60 80 - 25 0 75 100 125 150 On-Resistance vs. Junction Temperature Gate Charge 190 0.2 - 0.4 ID = 1 mA - 1.0 ID = 250 µA - 25 0 25 50 75 100 125 Drain-Source Breakdown Voltage (V) 0.8 V GS(th) Variance (V) 50 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) - 1.6 - 50 25 ID = 1 mA 180 170 160 150 140 - 50 150 - 25 0 TJ - Temperature (°C) 25 50 75 100 125 150 TJ - Temperature (°C) Threshold Voltage Drain-Source Breakdown vs. Junction Temperature 100 1000 Limited by RDS(on)* TJ = 150 °C 10 µs 100 I D - Drain Current (A) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 100 µs 10 1 ms 10 ms 100 ms, DC 1 0.1 TC = 25 °C Single Pulse 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage www.vishay.com 4 1.2 0.01 0.1 1.0 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 69995 S-82349-Rev. B, 22-Sep-08 SUM75N15-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 400 100 350 300 Package Limited 60 Power (W) I D - Drain Current (A) 80 40 250 200 150 100 20 50 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 TC - Case Temperature (°C) TJ - Temperature (°C) Current Derating*, Junction-to-Case Power Derating*, Junction-to-Case 150 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69995. Document Number: 69995 S-82349-Rev. B, 22-Sep-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1