Microsemi APT2X101D120J Ultrafast soft recovery rectifier diode Datasheet

2
1
3
4
2
1
Anti-Parallel
APT2X100D120J
3
4
2
3
1
4
SO
Parallel
APT2X101D120J
2
T-
27
APT2X101D120J
APT2X100D120J
1200V
1200V
"UL Recognized"
93A
93A
file # E145592
ISOTOP ®
DUAL DIE ISOTOP® PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular SOT-227 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• High Blocking Voltage
• Increased System Power
•
•
•
•
•
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
• Low Leakage Current
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
APT2X101_100D120J
Characteristic / Test Conditions
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 80°C, Duty Cycle = 0.5)
IFSM
TJ,TSTG
UNIT
Maximum D.C. Reverse Voltage
VRRM
IF(RMS)
Density
1200
Volts
93
115
RMS Forward Current (Square wave, 50% duty)
Amps
1000
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
-55 to 175
Operating and StorageTemperature Range
°C
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
TYP
MAX
IF = 100A
2.0
2.5
IF = 200A
2.3
IF = 100A, TJ = 125°C
1.8
Volts
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
Microsemi Website - http://www.microsemi.com
120
UNIT
μA
pF
9-2009
VF
MIN
053-1201 Rev D
Symbol
APT2X101_100D120J
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C
F
F
R
J
-
47
trr
Reverse Recovery Time
-
420
Qrr
Reverse Recovery Charge
-
1250
-
7
-
580
ns
-
5350
nC
-
19
-
220
-
10300
-
70
MIN
TYP
IRRM
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 100A, diF/dt = -200A/μs
VR = 800V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 800V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 100A, diF/dt = -200A/μs
IF = 100A, diF/dt = -1000A/μs
VR = 800V, TC = 125°C
Maximum Reverse Recovery Current
ns
nC
-
-
Amps
Amps
ns
nC
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MAX
RθJC
Junction-to-Case Thermal Resistance
.41
RθJA
Junction-to-Ambient Thermal Resistance
20
WT
Torque
Package Weight
oz
29.2
g
10
lb•in
1.1
N•m
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.7
0.30
0.25
0.5
Note:
0.20
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.45
0.35
0.3
0.15
t1
t2
0.10
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
SINGLE PULSE
0.05
0
10
-5
10-4
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
053-1201 Rev D 9-2009
°C/W
1.03
Maximum Terminal & Mounting Torque
0.40
UNIT
300
700
250
600
200
TJ = 150°C
150
100
TJ = 25°C
TJ = 125°C
50
trr, REVERSE RECOVERY TIME
(ns)
IF, FORWARD CURRENT
(A)
TYPICAL PERFORMANCE CURVES
TJ = -55°C
0
0.5
1
1.5
2
2.5
3
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
T =125°C
J
V =800V
R
200A
500
100A
400
50A
300
200
100
0
0
APT2X101_100D120J
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/μs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Qrr, REVERSE RECOVERY CHARGE
(nC)
R
200A
100A
50A
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
IRRM, REVERSE RECOVERY CURRENT
(A)
80
T =125°C
J
V =800V
50
40
100A
30
20
50A
10
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
0
200
140
1.2
trr
1.0
IRRM
0.8
trr
0.6
0.4
Qrr
0.2
Duty cycle = 0.5
T =150°C
J
120
Qrr
100
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
200A
R
60
0
1.4
0.0
T =125°C
J
V =800V
70
80
60
40
20
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
1000
800
600
400
200
0
.6
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-1201 Rev D 9-2009
CJ, JUNCTION CAPACITANCE
(pF)
1200
APT2X101_100D120J
Vr
diF /dt Adjust
+18V
APT75GP120B2LL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
1.95 (.077)
2.14 (.084)
Anti-parallel
Parallel
APT2X100D120J
APT2X101D120J
Anode 2
Cathode 1 Cathode 1
Anode 1
Anode 1
Anode 2
38.0 (1.496)
38.2 (1.504)
Cathode 2
Cathode 2
053-1201 Rev D
9-2009
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
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