Diotec BC848W Surface mount si-epitaxial planartransistor Datasheet

BC 846W ... BC 850W
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
2±0.1
1±0.1
Type
Code
1
1.25±0.1
3
2.1±0.1
0.3
NPN
Power dissipation – Verlustleistung
200 mW
Plastic case
Kunststoffgehäuse
SOT-323
Weight approx. – Gewicht ca.
2
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.3
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1=B
2=E
3=C
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BC 846W
BC 847W
BC 850W
BC 848W
BC 849W
Collector-Emitter-voltage
B open
VCE0
65 V
45 V
30 V
Collector-Base-voltage
E open
VCB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
VEB0
6V
5V
1
Power dissipation – Verlustleistung
Ptot
200 mW )
Collector current – Kollektorstrom (DC)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
- IEM
200 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Group A
Group B
Group C
2
DC current gain – Kollektor-Basis-Stromverhältnis )
VCE = 5 V, IC = 10 :A
hFE
typ. 90
typ. 150
typ. 270
VCE = 5 V, IC = 2 mA
hFE
110...220
200...450
420...800
Small signal current gain – Stromverstärkung hfe
typ. 220
typ. 330
typ. 600
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz
1
Input impedance – Eingangs-Impedanz
hie
1.6...4.5 kS
3.2...8.5 kS
6...15 kS
Output admittance – Ausgangs-Leitwert
hoe
18 < 30 :S
30 < 60 :S
60 < 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
12
01.11.2003
General Purpose Transistors
BC 846W ... BC 850W
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
VCEsat
–
90 mV
250 mV
IC = 100 mA, IB = 5 mA
VCEsat
–
200 mV
600 mV
VBEsat
–
700 mV
–
VBEsat
–
900 mV
–
VCE = 5 V, IC = 2 mA
VBEon
580 mV
660 mV
700 mV
VCE = 5 V, IC = 10 mA
VBEon
–
–
770 mV
IE = 0, VCB = 30 V
ICB0
–
–
15 nA
IE = 0, VCB = 30 V, Tj = 150/C
ICB0
–
–
5 :A
IEB0
–
–
100 nA
1
Base saturation voltage – Basis-Sättigungsspannung )
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
1
Base-Emitter voltage – Basis-Emitter-Spannung )
Collector-Base cutoff current – Kollektorreststrom
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
100 MHz
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
–
3.5 pF
6 pF
–
9 pF
–
–
2 dB
10 dB
1.2 dB
4 dB
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 :A
RG = 2 kS, f = 1 kHz,
)f = 200 Hz
VCE = 5 V, IC = 200 :A
RG = 2 kS, f = 1 kHz,
f = 30 ... 15000 Hz
BC 846W...
F
BC 848W
BC 849W...
F
BC 850W
BC 849W
F
–
1.4 dB
4 dB
BC 850W
F
–
1.4 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking of available current gain
groups per type
Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ
620 K/W 2)
RthA
BC 856W ... BC 860W
BC 846AW = 1A
BC 846BW = 1B
BC 847AW = 1E
BC 847BW = 1F
BC 847CW = 1G
BC 848AW = 1J
BC 848BW = 1K
BC 848CW = 1L
BC 849BW = 2B
BC 849CW = 2C
BC 850BW = 2F
BC 850CW = 2G
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
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