Cypress CY62138FV30 2-mbit (256k x 8) static ram Datasheet

CY62138FV30 MoBL®
2-Mbit (256K x 8) Static RAM
Functional Description [1]
Features
•
•
•
•
Very high speed: 45 ns
Wide voltage range: 2.20V–3.60V
Pin compatible with CY62138CV25/30/33
Ultra low standby power
The CY62138FV30 is a high performance CMOS static RAM
organized as 256K words by 8 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life™ (MoBL®) in
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption. Place the device into standby
mode reducing power consumption when deselected (CE1
HIGH or CE2 LOW).
— Typical standby current: 1 µA
— Maximum standby current: 5 µA
• Ultra low active power
•
•
•
•
— Typical active current: 1.6 mA @ f = 1 MHz
Easy memory expansion with CE1, CE2, and OE features
Automatic power down when deselected
CMOS for optimum speed and power
Offered in Pb-free 36-ball VFBGA, 32-pin TSOP II, 32-pin
SOIC, 32-pin TSOP I and 32-pin STSOP packages
To write to the device, take Chip Enable (CE1 LOW and CE2
HIGH) and Write Enable (WE) inputs LOW. Data on the eight
IO pins (IO0 through IO7) is then written into the location
specified on the address pins (A0 through A17).
To read from the device, take Chip Enable (CE1 LOW and CE2
HIGH) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins appear on
the IO pins.
The eight input and output pins (IO0 through IO7) are placed
in a high impedance state when the device is deselected (CE1
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE1 LOW and CE2 HIGH and WE
LOW).
Logic Block Diagram
IO0
DATA IN DRIVERS
SENSE AMPS
ROW DECODER
IO1
256K x 8
ARRAY
IO2
IO3
IO4
IO5
IO6
COLUMN DECODER
A12
OE
IO7
A15
A16
A17
WE
POWER
DOWN
A13
A14
CE1
CE2
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
Note
1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 001-08029 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised March 26, 2007
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CY62138FV30 MoBL®
Pin Configuration [2]
36-Ball VFBGA
Top View
A1
A0
IO 4
CE2
32-Pin SOIC/TSOP II
Top View
A6
A3
WE
A4
NC
A5
A8
IO 0
B
IO 1
C
VSS
VCC
D
VCC
VSS
E
IO 2
F
A2
IO 5
IO 6
A7
A
NC
A17
IO 7
OE
CE1
A16
A15
IO 3
G
A9
A10
A11
A12
A13
A14
H
A11
A9
A8
A13
WE
CE2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP I
Top View
(not to scale)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
IO0
IO1
IO2
VSS
A11
A9
A8
A13
WE
CE2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
OE
A10
CE1
IO7
IO6
IO5
IO4
IO3
GND
IO2
IO1
IO0
A0
A1
A2
A3
1
32
31
2
3
4
30
29
5
6
28
27
26
25
7
8
9
10
24
23
22
11
12
13
14
15
16
25
26
26
27
28
29
30
31
32
1
2
3
4
5
6
7
8
21
20
19
18
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
IO7
IO6
IO5
IO4
IO3
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
STSOP
Top View
(not to scale)
OE
A10
CE1
IO7
IO6
IO5
IO4
IO3
GND
IO2
IO1
IO0
A0
A1
A2
A3
Product Portfolio
Power Dissipation
VCC Range (V)
Product
CY62138FV30LL
Speed
(ns)
Min
Typ [3]
Max
2.2
3.0
3.6
45
Operating ICC (mA)
f = 1 MHz
Standby ISB2 (µA)
f = fmax
Typ [3]
Max
Typ [3]
Max
Typ [3]
Max
1.6
2.5
13
18
1
5
Note
2. NC pins are not connected on the die.
3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C.
Document #: 001-08029 Rev. *E
Page 2 of 13
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CY62138FV30 MoBL®
DC Input Voltage [4, 5] .......................................–0.3V to 3.9V
Maximum Ratings
Output Current into Outputs (LOW)............................. 20 mA
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Storage Temperature .................................. –65°C to +150°C
Latch-up Current .................................................... > 200 mA
Ambient Temperature with
Power Applied............................................... 55°C to +125°C
Product
Supply Voltage to Ground
Potential ........................................................... –0.3V to 3.9V
Range
Ambient
Temperature
VCC [6]
CY62138FV30LL Industrial –40°C to +85°C 2.2V to 3.6V
DC Voltage Applied to Outputs
in High-Z State [4, 5] .......................................... –0.3V to 3.9V
Electrical Characteristics (Over the Operating Range)
Parameter
Description
Output HIGH Voltage
VOH
Output LOW Voltage
VOL
Input HIGH Voltage
VIH
Input LOW Voltage
VIL
Test Conditions
45 ns
Min
Typ [3]
Unit
Max
IOH = –0.1 mA
2.0
V
IOH = –1.0 mA, VCC > 2.70V
2.4
V
IOL = 0.1 mA
0.4
V
IOL = 2.1 mA, VCC > 2.70V
0.4
V
VCC = 2.2V to 2.7V
1.8
VCC + 0.3V
V
VCC= 2.7V to 3.6V
2.2
VCC + 0.3V
V
VCC = 2.2V to 2.7V For BGA package
–0.3
0.6
V
VCC= 2.7V to 3.6V
–0.3
0.8
V
VCC = 2.2V to 3.6V For other packages
–0.3
0.6
V
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
µA
IOZ
Output Leakage Current
GND < VO < VCC,
output disabled
–1
+1
µA
ICC
VCC Operating Supply Current f = fmax = 1/tRC
13
18
mA
1.6
2.5
1
5
µA
1
5
µA
VCC = VCCmax
IOUT = 0 mA
CMOS levels
f = 1 MHz
Automatic CE Power Down
Current CMOS Inputs
ISB1
CE1 > VCC – 0.2V or CE2 < 0.2V,
VIN > VCC – 0.2V, VIN < 0.2V),
f = fmax (address and data only),
f = 0 (OE, and WE), VCC = 3.60V
ISB2
[7]
Automatic CE Power Down
Current CMOS Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
Capacitance (For all packages) [8]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = VCC(typ.)
Max
Unit
10
pF
10
pF
Notes
4. VIL(min) = –2.0V for pulse durations less than 20 ns.
5. VIH(max) = VCC+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100 µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.
7. Only chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
8. Tested initially and after any design or process changes that may affect these parameters.
Document #: 001-08029 Rev. *E
Page 3 of 13
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CY62138FV30 MoBL®
Thermal Resistance [8]
Parameter
ΘJA
Description
Test Conditions
Thermal Resistance Still air, soldered on a 3 x 4.5
(Junction to Ambient) inch, two layer printed circuit
Thermal Resistance board
ΘJC
(Junction to Case)
SOIC
VFBGA
TSOP II
STSOP
TSOP I
Unit
44.53
38.49
44.16
59.72
50.19
°C/W
24.05
17.66
11.97
15.38
14.59
°C/W
AC Test Loads and Waveforms
R1
VCC
OUTPUT
ALL INPUT PULSES
VCC
R2
30 pF
INCLUDING
JIG AND
SCOPE
90%
10%
GND
Rise Time = 1 V/ns
Equivalent to:
90%
10%
Fall Time = 1 V/ns
THEVENIN EQUIVALENT
OUTPUT
Parameters
2.5V (2.2V to 2.7V)
RTH
V
3.0V (2.7V to 3.6V)
Unit
R1
16667
1103
Ω
R2
15385
1554
Ω
RTH
8000
645
Ω
VTH
1.20
1.75
V
Data Retention Characteristics (Over the Operating Range)
Parameter
VDR
ICCDR
Conditions
VCC for Data Retention
[7]
Typ [3]
Max
Operation Recovery Time
Unit
V
1
VCC = 1.5V,
CE1 > VCC − 0.2V or CE2 < 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V
Chip Deselect to Data Retention Time
[9]
Min
1.5
Data Retention Current
tCDR [8]
tR
Description
4
µA
0
ns
tRC
ns
Data Retention Waveform [10]
DATA RETENTION MODE
VCC
VCC(min)
tCDR
VDR > 1.5V
VCC(min)
tR
CE
Notes:
9. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs.
10. CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH.
Document #: 001-08029 Rev. *E
Page 4 of 13
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CY62138FV30 MoBL®
Switching Characteristics (Over the Operating Range) [11]
Parameter
45 ns
Description
Min
Max
Unit
Read Cycle
tRC
Read Cycle Time
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE1 LOW and CE2 HIGH to Data Valid
45
ns
tDOE
OE LOW to Data Valid
22
ns
tLZOE
OE LOW to Low-Z [12]
tHZOE
OE HIGH to High-Z
tLZCE
45
45
10
10
[12, 13]
tHZCE
CE1 HIGH or CE2 LOW to High-Z
tPU
CE1 LOW and CE2 HIGH to Power Up
Write Cycle
ns
18
[12]
ns
ns
18
0
ns
ns
45
CE1 HIGH or CE2 LOW to Power Down
ns
ns
5
[12,13]
CE1 LOW and CE2 HIGH to Low Z
tPD
ns
ns
[14]
tWC
Write Cycle Time
45
ns
tSCE
CE1 LOW and CE2 HIGH to Write End
35
ns
tAW
Address Setup to Write End
35
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Setup to Write Start
0
ns
tPWE
WE Pulse Width
35
ns
tSD
Data Setup to Write End
25
ns
tHD
Data Hold from Write End
0
ns
[12, 13]
tHZWE
WE LOW to High-Z
tLZWE
WE HIGH to Low-Z [12]
18
10
ns
ns
Notes
11. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of VCC(typ)/2, input
pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the ““AC Test Loads and Waveforms” on page 4” .
12. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
13. tHZOE, tHZCE, and tHZWE transitions are measured when the output enters a high impedance state.
14. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these
signals can terminate a write by going INACTIVE. Reference the data input setup and hold timing to the edge of the signal that terminates the write.
Document #: 001-08029 Rev. *E
Page 5 of 13
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CY62138FV30 MoBL®
Switching Waveforms
Read Cycle 1 (Address transition controlled) [15, 16]
tRC
RC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE controlled) [10, 16, 17]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tDOE
tHZCE
tLZOE
HIGH IMPEDANCE
DATA OUT
DATA VALID
tLZCE
tPD
tPU
VCC
SUPPLY
CURRENT
HIGH
IMPEDANCE
50%
50%
ICC
ISB
Write Cycle No. 1 (WE controlled) [10, 14, 18, 19]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
OE
tSD
DATA IO
NOTE 20
tHD
DATA VALID
tHZOE
Notes:
15. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
16. WE is HIGH for read cycle.
17. Address valid before or similar to CE1 transition LOW and CE2 transition HIGH.
18. Data IO is high impedance if OE = VIH.
19. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state.
20. During this period, the IOs are in output state. Do not apply input signals.
Document #: 001-08029 Rev. *E
Page 6 of 13
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CY62138FV30 MoBL®
Switching Waveforms (continued)
Write Cycle No. 2 (CE1 or CE2 controlled) [10, 14, 18, 19]
tWC
ADDRESS
tSCE
CE
tSA
tAW
tHA
tPWE
WE
tSD
DATA IO
tHD
DATA VALID
Write Cycle No. 3 (WE controlled, OE LOW) [10, 19]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
tSD
NOTE 20
DATA IO
tHD
DATA VALID
tLZWE
tHZWE
Truth Table
CE1
CE2
WE
OE
H
X
X
X
High-Z
Deselect/Power Down
Standby (ISB)
X
L
X
X
High-Z
Deselect/Power Down
Standby (ISB)
L
H
H
L
Data Out
Read
Active (ICC)
L
H
H
H
High-Z
Output Disabled
Active (ICC)
L
H
L
X
Data in
Write
Active (ICC)
Document #: 001-08029 Rev. *E
Inputs/Outputs
Mode
Power
Page 7 of 13
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CY62138FV30 MoBL®
Ordering Information
Speed
(ns)
Ordering Code
Package
Diagram
45
CY62138FV30LL-45BVXI
51-85149
36-ball VFBGA (Pb-free)
CY62138FV30LL-45ZSXI
51-85095
32-pin TSOP II (Pb-free)
CY62138FV30LL-45ZAXI
51-85094
32-pin STSOP (Pb-free)
CY62138FV30LL-45ZXI
51-85056
32-pin TSOP I (Pb-free)
CY62138FV30LL-45SXI
51-85081
32-pin SOIC (Pb-free)
Operating
Range
Package Type
Industrial
Package Diagrams
Figure 1. 36-ball VFBGA (6 x 8 x 1 mm), 51-85149
BOTTOM VIEW
TOP VIEW
A1 CORNER
Ø0.05 M C
Ø0.25 M C A B
A1 CORNER
Ø0.30±0.05(36X)
2
3
4
5
6
6
5
4
3
2
1
C
C
E
F
G
D
E
2.625
D
0.75
A
B
5.25
A
B
8.00±0.10
8.00±0.10
1
F
G
H
H
A
1.875
A
B
0.75
6.00±0.10
3.75
6.00±0.10
0.15(4X)
0.10 C
0.21±0.05
0.25 C
0.55 MAX.
B
Document #: 001-08029 Rev. *E
1.00 MAX
0.26 MAX.
SEATING PLANE
C
51-85149-*C
Page 8 of 13
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CY62138FV30 MoBL®
Package Diagrams (continued)
Figure 2. 32-pin TSOP II, 51-85095
51-85095-**
Document #: 001-08029 Rev. *E
Page 9 of 13
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CY62138FV30 MoBL®
Package Diagrams (continued)
Figure 3. 32-pin (450 Mil) Molded SOIC, 51-85081
16
1
0.546[13.868]
0.566[14.376]
0.440[11.176]
0.450[11.430]
17
32
0.793[20.142]
0.817[20.751]
0.006[0.152]
0.012[0.304]
0.101[2.565]
0.111[2.819]
0.118[2.997]
MAX.
0.004[0.102]
0.050[1.270]
BSC.
0.004[0.102]
MIN.
0.014[0.355]
0.020[0.508]
SEATING PLANE
Document #: 001-08029 Rev. *E
0.047[1.193]
0.063[1.600]
0.023[0.584]
0.039[0.990]
51-85081-*B
Page 10 of 13
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CY62138FV30 MoBL®
Package Diagrams (continued)
Figure 4. 32-pin TSOP I (8 x 20 mm), 51-85056
51-85056-*D
Document #: 001-08029 Rev. *E
Page 11 of 13
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CY62138FV30 MoBL®
Package Diagrams (continued)
Figure 5. 32-pin STSOP (8 x 13.4 mm), 51-85094
51-85094-*D
MoBL is a registered trademark, and More Battery Life is a trademark of Cypress Semiconductor. All product and company names
mentioned in this document may be the trademarks of their respective holders.
Document #: 001-08029 Rev. *E
Page 12 of 13
© Cypress Semiconductor Corporation, 2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CY62138FV30 MoBL®
Document History Page
Document Title: CY62138FV30 MoBL®, 2-Mbit (256K x 8) Static RAM
Document Number: 001-08029
REV.
ECN NO.
Issue
Date
Orig. of
Change
Description of Change
**
463660
See ECN
NXR
New data sheet
*A
467351
See ECN
NXR
Added 32-pin TSOP II package, 32 pin TSOP I and 32 pin STSOP packages
Changed ball A3 from NC to CE2 in 36-ball FBGA pin out
*B
566724
See ECN
NXR
Converted from Preliminary to Final
Corrected typo in 32 pin TSOP II pin configuration diagram on page #2 (changed
pin 24 from CE1to OE and pin 22 from CE to CE1)
Changed the ICC(max) value from 2.25 mA to 2.5 mA for test condition f=1 MHz
Changed the ISB2(typ) value from 0.5 µA to 1 µA
Changed the ISB2(max) value from 2.5 µA to 5 µA
Changed the ICCDR(typ) value from 0.5 µA to 1 µA and ICCDR(max) value from 2.5
µA to 4 µA
*C
797956
See ECN
VKN
Added 32-pin SOIC package
Updated VIL spec for SOIC, TSOP-II, TSOP-I, and STSOP packages on Electrical
characteristics table
*D
809101
See ECN
VKN
Corrected typo in the Ordering Information table
*E
940341
See ECN
VKN
Added footnote #7 related to ISB2 and ICCDR
Document #: 001-08029 Rev. *E
Page 13 of 13
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