SSM5N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N05FU High Speed Switching Applications Unit: mm • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 0.8 Ω (max) (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) • Low gate threshold voltage Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±12 V DC ID 400 Pulse IDP 800 PD (Note 1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Drain power dissipation (Ta = 25°C) Note: mA JEDEC ― JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2L1B high temperature/current/voltage and the significant change in Weight: 6 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 5) Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM5N05FU Marking Equivalent Circuit (top view) 5 4 5 DF 1 2 4 Q1 3 Q2 1 2 3 Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Min Typ. Max Unit VGS = ±12 V, VDS = 0 ⎯ ⎯ ±1 μA ID = 1 mA, VGS = 0 20 ⎯ ⎯ V VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 200 mA (Note2) 350 ⎯ ⎯ mS Drain-Source on-resistance RDS (ON) ID = 200 mA, VGS = 4 V (Note2) ⎯ 0.6 0.8 ID = 200 mA, VGS = 2.5 V (Note2) ⎯ 0.85 1.2 ⎯ 22 ⎯ pF ⎯ 9 ⎯ pF ⎯ 21 ⎯ pF Gate leakage current IGSS Drain-Source breakdown voltage Drain cut-off current V (BR) DSS IDSS Gate threshold voltage Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time Test Condition VDS = 3 V, VGS = 0, f = 1 MHz Turn-on time ton VDD = 3 V, ID = 100 mA, ⎯ 60 ⎯ Turn-off time toff VGS = 0~2.5 V ⎯ 70 ⎯ Ω ns Note2: Pulse test Switching Time Test Circuit (a) Test circuit (b) VIN 2.5 V OUT 2.5 V 90% 50 Ω IN 0 10 μs 0V RL VDD (c) VOUT VDD = 3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C 10% VDD VDS (ON) 10% 90% tr ton tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device. 2 2007-11-01 SSM5N05FU (Q1, Q2 common) ID – VDS ID – VGS 1000 1000 Common Source 10 4 800 3 VDS = 3 V 100 600 2.1 400 1.9 Drain current ID (mA) 2.3 (mA) Drain current ID Common Source Ta = 25°C 2.5 1.7 10 Ta = 100°C 1 25°C −25°C 0.1 200 VGS = 1.5 V 0 0 0.5 1.0 1.5 Drain-Source voltage 0.01 0 2.0 0.5 VDS (V) 1.0 1.5 2.0 Gate-Source voltage RDS (ON) – ID 3.0 VGS (V) RDS (ON) – VGS 2.0 2.0 Common Source Common Source Ta = 25°C ID = 200 mA 1.6 Drain-Source on-resistance RDS (ON) (Ω) Drain-Source on-resistance RDS (ON) (Ω) 2.5 1.2 2.5 V 0.8 VGS = 4 V 0.4 1.6 1.2 Ta = 100°C 0.8 25°C 0.4 −25°C 0 0 200 400 600 800 0 0 1000 2 Drain current ID (mA) 4 Gate-Source voltage RDS (ON) – Ta Forward transfer admittance ⎪Yfs⎪ (mS) Common Source Drain-Source on-resistance RDS (ON) (Ω) ID = 200 mA 1.6 2.5 V 0.8 VGS = 4 V 0.4 0 −25 0 25 50 75 8 10 VGS (V) ⎪Yfs⎪ – ID 2.0 1.2 6 100 125 150 Ambient temperature Ta (°C) 5000 Common Source 3000 VDS = 3 V Ta = 25°C 1000 500 300 100 10 30 50 100 300 500 1000 Drain current ID (mA) 3 2007-11-01 SSM5N05FU (Q1, Q2 common) IDR – VDS C – VDS 100 1000 VGS = 0 50 Ta = 25°C 30 (pF) 800 D 600 G Capacitance C Drain reverse current IDR (mA) Common Source IDR S 400 Ciss 10 Coss 5 3 Common Source Crss VGS = 0 f = 1 MHz 200 Ta = 25°C 1 0.1 0 0 −0.2 −0.4 −0.6 −0.8 Drain-Source voltage −1.0 −1.2 0.3 1 Drain-Source voltage −1.4 t – ID Mounted on FR4 board. VDD = 3 V (25.4 mm × 25.4 mm × 1.6 t 2 Cu Pad: 0.32 mm × 5) (mW) toff Common Source VGS = 0~2.5 V Ta = 25°C tf ton 30 tr 10 1 (V) PD* – Ta Drain power dissipation PD* Switching time t (ns) 50 VDS 30 400 500 100 10 VDS (V) 1000 300 3 3 10 30 100 300 200 100 300 0 0 Drain current ID (mA) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM5N05FU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01