DSK ERD38-05 High efficiency rectifier Datasheet

Diode Semiconductor Korea ERD38-04 --- ERD38-06
VOLTAGE RANGE: 400 --- 600 V
CURRENT: 1.5 A
HIGH EFFICIENCY RECTIFIERS
FEATURES
Low cost
Diffused junction
DO - 15
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.014ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERD38 - 04
ERD38 - 05
ERD38 - 06
UNITS
Maximum recurrent peak reverse voltage
VRRM
400
500
600
V
Maximum RMS voltage
VRMS
280
350
420
V
Maximum DC blocking voltage
VDC
400
500
600
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
1.5
A
IFSM
80.0
A
VF
2.5
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 1.5A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
5.0
IR
50
Maximum reverse recovery time
(Note1)
trr
Typical junction capacitance
(Note2)
CJ
Typical thermal resistance
(Note3)
RθJA
50
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
Operating junction temperature range
Storage temperature range
A
100.0
50
ns
30
pF
/W
NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
ERD38-04 --- ERD38-06
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
10
N 1.
50
N 1.
trr
+0.5A
D.U.T.
(+)
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE1)
1
NONINDUCTIVE
0
-0 .25
A
(-)
-1.0A
1 cm
NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF
2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω.
SET TIME BASE FOR 20 ns/cm
FIG.4-- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT.
AMPERES
1.4
1.2
1
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.8
0.6
0.4
0.2
0
20
0
40
60
80
100 120 140 150
90
80
70
60
50
40
20
10
0
50
30
TJ=25
5
0.1 0.2
0.4
1
2
4
0
50
100
150
250
200
10
20
REVESE VOLTAGE,VOLTS
40
100
FIG.1 -- TYPICAL FORWARD CHARACTERISTIC
10
AMPERES
100
0
T J =25
8.3m s Single Half
Sine-W ave
30
NUMBER OF CYCLES AT 60Hz
FIG.5--JUNCTION CAPACITANCE CHARACTERISTICS
JUNCTION CAPACITANCE,pF
100
AMBIENT TEMPERATURE.
INSTANTANEOUS FORWARD CURRENT
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT.
FIG.3 --FORWARD DERATING CURVE
1 .0
T J=25
P u ls e W id th = 3 0 0 µ S
0 .1
0 .0 1
0
0.4
0.8
1.2 1.6
2.0 2.4
2.8
3.2
3.6 4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
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