GOOD-ARK BAV201 Switching diode Datasheet

BAV200 / 201 / 202 / 203
Switching Diode
Features
Silicon Epitaxial Planar Diodes
Applications
General purposes
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80)
Weight: approx. 34 mg
Cathode Band Color: Black
Absolute Maximum Ratings
Parameter
Test Condition
Peak reverse voltage
Reverse voltage
( Tamb=25oC unless otherwise specified )
Part
Symbol
Value
Unit
BAV200
VRRM
60
V
BAV201
VRRM
120
V
BAV202
VRRM
200
V
BAV203
VRRM
250
V
BAV200
VR
50
V
V
BAV201
VR
100
BAV202
VR
150
V
BAV203
VR
200
V
mA
IF
250
Peak forward surge current
Forward current
tp= 1 s, Tj=25oC
IFSM
1
A
Forward peak current
f=50Hz
IFM
625
mA
Thermal Characteristics
Parameter
Junction ambient
( Tamb=25oC unless otherwise specified )
Test Condition
on PC board
50 mm X 50mm X 1.6mm
Junction temperature
Stroage temperature range
Symbol
Value
Unit
RthJA
500
K/W
Tj
175
o
C
Tstg
-65 to +175
o
C
Electrical Characteristics
Parameter
( Tamb=25oC unless otherwise specified )
Test Condition
Forward voltage
IF=100mA
Reverse current
VR=50V
Breakdown voltage
Diode capacitance
Part
Symbol
Min.
Typ.
Max.
Unit
VF
1
V
BAV200
IR
100
nA
VR=100V
BAV201
IR
100
nA
VR=150V
BAV202
IR
100
nA
VR=200V
BAV203
IR
100
nA
Tj=100oC, VR=50V
BAV200
IR
15
uA
Tj=100oC, VR=100V
BAV201
IR
15
uA
Tj=100oC, VR=150V
BAV202
IR
15
uA
Tj=100oC, VR=200V
BAV203
IR
15
uA
IR=100uA, tp/T=0.01, tp=0.3ms
BAV200
V(BR)
60
IR=100uA, tp/T=0.01, tp=0.3ms
BAV201
V(BR)
120
V
IR=100uA, tp/T=0.01, tp=0.3ms
BAV202
V(BR)
200
V
IR=100uA, tp/T=0.01, tp=0.3ms
BAV203
V(BR)
250
VR=0, f=1MHz
V
CD
1.5
5
Differential forward resistance
IF=10mA
rf
Reverse recovery time
IF=IR=30mA, iR=3mA, RL=100Ω
trr
652
V
pF
Ω
50
ns
Typical characteristics
( Tamb=25oC unless otherwise specified )
Package Dimensions in mm (inches)
653
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