2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 0.4±0.1 +0.2 2.8-0.3 +0.2 1.6-0.1 1 3 2 0.15 Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEX 150 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 7 V DC IC 1.0 A Pulse ICP 2.0 A JEDEC ― IB 0.1 A JEITA ― 1000 mW 625 mW Tj 150 °C Tstg −55 to 150 °C Collector current (Note 1) Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range t = 10s DC PC 1. Base 2. Emitter 3. Collector TOSHIBA 0～0.1 Characteristic 0.7±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.16±0.05 ・High-speed switching: tf = 0.2 μs (typ) 1.9±0.2 2.9±0.2 ・Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) 0.95 0.95 ・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) 2-3S1A Weight: 0.01g (Typ.) Note 1: Ensure that the channel temperature does not exceed 150°C. 2 Note 2: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645 mm ) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 2SC6061 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = 180 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 100 nA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 180 ― ― V Collector-emitter breakdown voltage V (BR) CEO V IC = 10 mA, IB = 0 120 ― ― hFE (1) VCE = 2 V, IC = 1 mA 100 ― ― hFE (2) VCE = 2 V, IC = 0.1 A 120 ― 300 hFE (3) VCE = 2 V, IC = 0.3 A 60 ― ― Collector emitter saturation voltage VCE (sat) IC = 0.3 A, IB = 0.01 A ― ― 0.14 V Base-emitter saturation voltage VBE (sat) IC = 0.3 A, IB = 0.01 A ― ― 1.1 V See Figure 3 circuit diagram ― 0.1 ― VCC≒72 V, RL = 24 Ω IB1 = −IB2 = 10 mA ― 1.5 ― ― 0.2 ― DC current gain Rise time Switching time tr Storage time tstg Fall time tf μs Figure 3 Switching Time Test Circuit & Timing Chart VCC IB1 Input IB1 RL 20 μs Output IB2 IB2 Duty cycle < 1% Marking Part No. (or abbreviation code) W N Lot code (year) Dot: even year No dot: odd year Lot code (month) 2 2006-11-13 2SC6061 IC – VCE 1 IC – VBE 12 1 10 Common emitter Ta = 25 ℃ Single non-repetitive pulse 8 4 0.6 3 2 0.4 IB=1mA 0.2 0 Collector current IC (A) Collector current IC (A) 6 0.8 2 4 6 8 10 COLLECTOR−EMITTER VOLTAGE VCE 0.6 0.4 Ta = 100 °C 0 12 0 (V) hFE – IC Collector -emitter saturation voltage VCE (sat) (V) DC current gain hFE Ta = 100 °C 100 −55 10 Common emitter VCE = 2 V Single non-repetitive pulse 0.01 0.4 0.6 0.8 1 1.2 VCE (sat) – IC 1 1 0.001 0.2 Base-emitter voltage VBE (V) 1000 25 −55 25 0.2 Common emitter Ta = 25 ℃ Single non-repetitive pulse 0 0.8 0.1 1 Collector current IC 25 0.1 Ta = 100 °C −55 0.01 0.001 10 Common emitter β = 30 Single non-repetitive pulse 0.01 0.1 Collector current IC (A) 1 (A) VBE (sat) – IC Base -emitter saturation voltage VBE (sat) (V) 10 1 Common emitter β = 30 Single non-repetitive pulse Ta = 55 °C 25 100 0.1 0.001 0.01 Collector current IC 0.1 1 (A) 3 2006-11-13 2SC6061 rth – tw Transient thermal resistance rth (°C/W) 1000 100 10 1 0.001 Curves apply only to limited areas of thermal resistance. Single non-repetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 0.01 0.1 1 10 Pulse width tw 100 1000 (s) Safe Operating Area 10 ICmax max(pulsed)* (パルス)* 10 ms※ IC 10 μs※ 100 ms※ Collector current IC (A) 1 μs IC max IC max (連続) (continuous) DC直流動作* operation Ta = 25 °C 1 ms※ 0.1 ※Single non-repetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an 0.01 FR4 board (glass-epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation 100 ms※* These characteristic curves must be de-rated linearly with increase in temperature. 0.001 10 0.1 1 Collector -emitter voltage 10 s※* VCEO max 100 VCE 1000 (V) 4 2006-11-13 2SC6061 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-13