SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G48,USM8G48,SM8J48,USM8J48 SM8G48A,USM8G48A,SM8J48A,USM8J48A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current : IT (RMS) = 8A l Gate Trigger Current : IGT = 30mA Max. : IGT = 20mA Max. (“A”Type) Unit: mm SM8G48, SM8J48, SM8G48A, SM8J48A JEDEC JEITA TOSHIBA USM8G48, USM8J48, USM8G48A, USM8J48A ― ― 13-10J1A JEDEC JEITA TOSHIBA ― ― 13-10J2A Weight: 1.7g MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage (U)SM8G48 (U)SM8G48A (U)SM8J48 (U)SM8J48A R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) 2 I t Limit Value SYMBOL RATING UNIT 400 V VDRM 600 IT (RMS) ITSM 2 8 80 (50Hz) 88 (60Hz) A A 2 I t 32 A s Critical Rate of Rise of On−State Current (Note 1) di / dt 50 A / µs Peak Gate Power Dissipation PGM 5 W Average Gate Power Dissipation PG (AV) 0.5 W Peak Forward Gate Voltage VGM 10 V Peak Forward Gate Current IGM 2 A Tj −40~125 °C Tstg −40~125 °C Junction Temperature Storage Temperature Range 1 Note 1: VDRM = 0.5×Rated ITM ≤ 12A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 2001-07-10 SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT ― ― 20 µA T2 (+), Gate (+) ― ― 1.5 T2 (+), Gate (−) ― ― 1.5 T2 (−), Gate (−) ― ― 1.5 IV T2 (−), Gate (+) ― ― ― I T2 (+), Gate (+) ― ― 30 II T2 (+), Gate (−) ― ― 30 III T2 (−), Gate (−) ― ― 30 T2 (−), Gate (+) ― ― ― T2 (+), Gate (+) ― ― 20 II T2 (+), Gate (−) ― ― 20 III T2 (−), Gate (−) ― ― 20 IV T2 (−), Gate (+) ― ― ― Repetitive Peak Off−State Current IDRM TEST CONDITION VDRM = Rated I II Gate Trigger Voltage III (U)SM8G48 (U)SM8J48 IV Gate Trigger Current I (U)SM8G48A (U)SM8J48A VD = 12V RL = 20Ω VGT VD = 12V RL = 20Ω IGT V mA Peak On−State Voltage VTM ITM = 12A ― ― 1.5 V Gate Non−Trigger Voltage VGD VD = Rated, Tc = 125°C 0.2 ― ― V VD = 12V, ITM = 1A ― ― 50 mA Junction to Case, AC ― ― 2.8 °C / W ― 300 ― ― 200 ― 10 ― ― 4 ― ― Holding Current IH Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage at Commutation Rth (j−c) (U)SM8G48 (U)SM8J48 (U)SM8G48A (U)SM8J48A (U)SM8G48 (U)SM8J48 (U)SM8G48A (U)SM8J48A VDRM = Rated, Tj = 125°C Exponential Rise dv / dt (dv / dt) c VDRM = 400V, Tj = 125°C (di / dt) c = −4.5A / ms V / µs V / µs MARKING NUMBER *1 *2 SYMBOL TYPE MARK SM8G48, SM8G48A, USM8G48, USM8G48A M8G48 SM8J48, SM8J48A, USM8J48, USM8J48A M8J48 SM8G48A, SM8J48A, USM8G48A, USM8J48A A Example 8A : January 1998 *3 8B : Febrary 1998 8L : December 1998 2 2001-07-10 SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A 3 2001-07-10 SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A 4 2001-07-10 SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-07-10