Infineon BBY66-05 Silicon tuning diode Datasheet

BBY66...
Silicon Tuning Diodes
High capacitance ratio
High Q hyperabrupt tuning diode
Low series resistance
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread
BBY66-02V
BBY66-05
BBY66-05W
1
3
2
D 2
D 1
1
Type
BBY66-02V*
BBY66-05
BBY66-05W*
2
Package
SC79
SOT23
SOT323
Configuration
single
common cathode
common cathode
LS(nH)
0.6
1.8
1.4
Marking
h
O1s / O2s**
OBs
* Preliminary
**For differences see next page Capacitance groups
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
12
V
Forward current
IF
50
mA
Operating temperature range
Top
-55 ... 150
°C
Storage temperature
Tstg
-55 ... 150
1
Value
Unit
Nov-14-2002
BBY66...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC Characteristics
Reverse current
IR
nA
VR = 10 V
-
-
20
VR = 10 V, TA = 65 °C
-
-
200
AC Characteristics
Diode capacitance1)
pF
CT
VR = 1 V, f = 1 MHz
66
68.7
71.5
VR = 2 V, f = 1 MHz
33
35.4
38
VR = 3 V, f = 1 MHz
19.7
20.95
22.2
12
12.7
13.5
CT1 /CT4.5
5
5.41
-
rS
-
0.25
0.4
VR = 4.5 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4.5 V
Series resistance
VR = 1 V, f = 470 MHz
1Capacitance
CT/groups
groups at 1V, coded 01; 02 (only BBY66-05)
01
02
C1V
min
66pF
68.5pF
C1V
max
69pF
71.5pF
Deliveries contain either CT group 01 or group 02 (marked on reel).
No direct order of CT groups possible
2
Nov-14-2002
BBY66...
Diode capacitance CT = (VR )
Temperature coefficient of the diode
capacitance TCc = (VR )
f = 1MHz
1200
80
pF
ppm/°C
TC C
CT
60
50
600
40
30
300
20
10
0
0
1
2
V
3
0
1
5
VR
Reverse current I R =
2
3
V
5
VR
(V R)
T A = Parameter
10
4
pA
TA=+85°C
10
3
IR
TA=+65°C
TA=+25°C
10
2
10
1
10
0
2
3
4
5
6
7
8
9
10
V
12
VR
3
Nov-14-2002
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