Eudyna F0100613B 10gb/s receiver transimpedance amplifier Datasheet

Preliminary
03.02.03
Features
F0100613B
•
Low voltage of +5.0V single power supply
•
1.5kΩ high transimpedance
•
Typical 7.5GHz broad bandwidth
•
29dB high gain
•
Over 20dB wide dynamic range
•
Differential output
10Gb/s Receiver
Transimpedance Amplifier
Applications
•
Preamplifier of an optical receiver circuit for OC-192/STM-64(10Gb/s)
Functional Description
The F0100613B is a stable GaAs integrated transimpedance amplifier capable of 29dB
gain at a typical 7.5GHz 3dB-cutoff-frequency, making it ideally suited for a 10Gb/s optical
receiver circuit, for example, OC-192/STM-64, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation.
The F0100613B typically specifies a high transimpedance of 1.5kΩ (RL=50Ω) with a wide
dynamic range of over 20dB. Furthermore, it can operate with a supply voltage of single
+5.0V.
Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers,
because the packaged preamplifier cannot operate with the maximum performance owing to
parasitic capacitance of the package.
The F0100613B and F0100614B are various in pad assignment.
F0100613B
10Gb/s Transimpedance Amplifier
Absolute Maximum Ratings
Ta=25°C, unless specified
Parameter
Symbol
Value
Units
Supply Voltage
VDD
-0.5 to +7.0V
V
Supply Current
IDD
100
mA
Ambient Operating Temperature
Ta
-40 to +90
°C
Storage Temperature
Tstg
-55 to +125
°C
Recommended Operating Conditions
Ta=25°C, VDD=+5.0V unless specified
Parameter
Value
Symbol
Unit
MIN.
TYP.
MAX.
VDD
4.75
5.00
5.25
V
Ta
0
25
85
°C
Photodiode Capacitance
CPD
0.20
0.225
0.25
pF
Input bond wire inductance
LIN
0.2
0.4
0.6
nH
Supply Voltage
Ambient Operating Temperature
Electrical Characteristics
Ta=25°C, VDD=+5.0V unless specified
Parameters
Symbol
Value
Test Conditions
Units
MIN.
TYP.
MAX
Supply Current
IDD
DC
-
65
-
mA
Gain
S21
PIN=-30dBm f=1GHz,
RL=50Ω
-
29
-
dB
-3dB High Frequency Cut-off
FCh
PIN=-30dBm RL=50Ω
-
7.5
-
GHz
Input Impedance
RI
f =1GHz
-
55
-
Ω
Transimpedance
ZT
f =1GHz
-
1.5
-
kΩ
Output Voltage
VO
DC
-
3.4
-
V
Input Voltage
VI
DC
-
1.0
-
V
-3dB Low Frequency Cut-off
FCl
Cout=1000pF
60
kHz
F0100613B
10Gb/s Transimpedance Amplifier
Block Diagram
VDD
OUTP
Level Shift
Buffer
OUTN
IN
GND
CAP
Cout
Die Pad Description
VDD
Supply Voltage
GND
Ground
IN
Input
OUTP
Output (positive)
OUTN
Output (negative)
CAP
Connect outer
Capacitance
F0100613B
10Gb/s Transimpedance Amplifier
Die Pad Assignment
A
11
10
9
12
8
13
7
920um
6
1
2
3
5
4
O
1050um
No.
Symbol
Center Coordinates (um)
No.
Symbol
Center Coordinates (um)
1
GND
(70,177.5)
10
OUTP
(685,780)
2
VDD
(220,70)
11
CAP
(70,780)
3
VDD
(430,70)
12
GND
(70,602.5)
4
OUTN
(685,70)
13
IN
(70,425)
5
GND
(910,92.5)
6
OUTN
(910,265)
7
GND
(910,425)
8
OUTP
(910,585)
O
(0,0)
9
GND
(910,757.5)
A
(980,850)
F0100613B
10Gb/s Transimpedance Amplifier
Test Circuits
1) AC Characteristics
Network Analyzer
50Ω
50Ω
VDD
Pin=-20dBm
f=130MHz∼20GHz
OUTP
IN
DUT
OUTN
50Ω
Prober
2) Sensitivity Characteristics
VPD
5V
0.022uF
E/O
Optical
Converter
Attenuator
VDD
PD
Pulse
Pattern
CLK
DUT
0.022uF
Generator
Post Amp.
Bit Error
Rate Tester
5V
0.022uF
F0100613B
10Gb/s Transimpedance Amplifier
General Description
A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint
photo-current from a PIN photo diode (PD). The performance in terms of sensitivity,
bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the
capacitance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum”
parameter descriptions can not always be achieved according to the employed PD and
package, the assembling design, and other technical experts. This is the major reason that
there is no product lineup of packaged transimpedance amplifiers.
Thus, for optimum performance of the transimpedance amplifier, it is essential for
customers to design the input capacitance carefully.
Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also
an important point of the design, because very faint photo-current flows into the
transimpedance amplifier. Therefore, in the assembly design of the interconnection between
a PD and a transimpedance, noise should be taken into consideration.
Recommendation
Noise Performance
The F0100613B based on GaAs FET’s shows excellent low-noise characteristics
compared with IC’s based on the silicon bipolar process. Many transmission systems often
demand superior signal-to-noise ratio, that is, high sensitivity; F0100613B is the best choice
for such applications.
The differential circuit configuration in the output enable a complete differential operation to
reduce common mode noise: simple single ended output operation is also available.
F0100613B
10Gb/s Transimpedance Amplifier
Die-Chip Description
The F0100613B is shipped like the die-chip described above. The die thickness is typically
280um ± 20um with the available pad size uncovered by a passivation film of 75um
square.The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.
Assembling Condition
SEI recommends the assembling process as shown below and affirms sufficient wire-pull
and die-share strength. The heating time of one minute at the temperature of 310°C gave
satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic
wire-bonding at the temperature of 150°C by a ball-bonding machine is effective.
Quality Assurance
For the F01 series products, there is only one technically inevitable drawback in terms of
quality assurance which is to be impossible of the burn-in test for screening owning to
die-shipment. SEI will not ship them if customers do not agree on this point. On the other
hand, the lot assurance test is performed completely without any problems according to
SEI’s authorized rules. A microscope inspection is conducted in conformance with the
MIL-STD-883C Method 2010.7.
Precautions
Owing to their small dimensions, the GaAs FET’s from which the F0100613B is designed
are easily damaged or destroyed if subjected to large transient voltages. Such transients
can be generated by power supplies when switched on if not properly decoupled. It is also
possible to induce spikes from static-electricity-charged operations or ungrounded equipment.
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