MOSFET SMD Type N-Channel MOSFET AO4404-HF (KO4404-HF) SOP-8 ■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) 1.50 0.15 ● RDS(ON) ＜ 24mΩ (VGS = 10V) 0.21 -0.02 +0.04 ● RDS(ON) ＜ 30mΩ (VGS = 4.5V) ● RDS(ON) ＜ 48mΩ (VGS = 2.5V) 1 2 3 4 ● Pb−Free Package May be Available. The G−Suffix Denotes a Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain Pb−Free Lead Finish D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ TA=70℃ ID 7.1 IDM 60 Avalanche Current IAS 15 EAS 34 Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA RthJL V 8.5 Pulsed Drain Current Avalanche energy Unit 3 2.1 A mJ W 40 75 ℃/W 24 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4404-HF (KO4404-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions ID=250 uA, VGS=0V Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V VGS(th) VDS=VGS , ID=250uA Gate Threshold Voltage Min Typ 30 VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 On State Drain Current RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg Gate Source Charge Qgs VGS=10V, ID=8.5A 0.7 1.4 V 24 36 TJ=125℃ VGS=4.5V, ID=8.5A 30 VGS=2.5V, ID=5A 48 40 A VDS=5V, ID=5A 10 S 857 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=8.5A 1050 pF 97 71 100 9.7 12 0.7 2 3.1 3.3 5 Turn-On Rise Time tr 4.7 7 Turn-Off DelayTime td(off) trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS VSD VGS=10V, VDS=15V, RL=1.8Ω, RGEN=6Ω IF= 5A, dI/dt= 100A/us 26 39 4.1 6.2 15 20 8.6 IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. ■ Marking Marking 4404 KC**** F www.kexin.com.cn Ω nC 1.63 Qgd Body Diode Reverse Recovery Time mΩ VGS=4.5V, VDS=5V td(on) Diode Forward Voltage 2 nA Turn-On DelayTime tf uA ±100 Gate Drain Charge Turn-Off Fall Time Unit V VGS=10V, ID=8.5A Static Drain-Source On-Resistance Max ns 12 nC 4.3 A 1 V MOSFET SMD Type N-Channel MOSFET AO4404-HF (KO4404-HF) ■ Typical Characterisitics 30 20 10V 3V 25 2.5V 20 12 ID(A) ID (A) VDS=5V 16 4.5V 15 125°C 8 10 25°C 2V 5 4 VGS=1.5V 0 0 1 2 3 4 0 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 2 2.5 3 Normalized On-Resistance 1.8 50 RDS(ON) (mΩ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics 60 VGS=2.5V 40 30 VGS=4.5V 20 VGS=10V 10 1.6 VGS=4.5V 1.4 VGS=10V VGS=2.5V 1.2 1 0.8 0 5 10 15 20 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+01 90 1.0E+00 80 ID=5A 70 1.0E-01 125°C 60 IS (A) RDS(ON) (mΩ) 1 50 40 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 30 25°C 20 1.0E-05 1.0E-06 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4404-HF (KO4404-HF) ■ Typical Characterisitics 5 1200 Capacitance (pF) 4 VGS (Volts) 1400 VDS=15V ID=8.5A 3 2 1000 Ciss 800 600 400 1 Crss 200 0 0 2 4 6 8 10 0 12 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics Power (W) ID (Amps) 10ms 0.1s 1.0 1s 30 0.1 1 10 VDS (Volts) 20 0 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 30 10 DC 0.1 ZθJA Normalized Transient Thermal Resistance 25 TJ(Max)=150°C TA=25°C 40 10s In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 20 1ms 10.0 10 15 50 TJ(Max)=150°C TA=25°C 100µs 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited Coss www.kexin.com.cn 100 1000