PHILIPS BGY212A Uhf amplifier module Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D373
BGY212A
UHF amplifier module
Preliminary specification
1999 Aug 23
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
PINNING - SOT482C
FEATURES
• 3.5 V nominal supply voltage
PIN
DESCRIPTION
• 2 W output power
1
RF input
• Easy output power control by DC voltage.
2
VC
3
VS
APPLICATIONS
4
RF output
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
1710 to 1785 MHz frequency range.
5
ground
DESCRIPTION
book, halfpage
The BGY212A is a three-stage UHF amplifier module in a
SOT482C leadless package with a plastic cover. The
module consists of one NPN silicon planar transistor die
and one bipolar monolithic integrated circuit mounted
together with matching and bias circuit components on a
metallized ceramic substrate.
5
4
3
2
Bottom view
1
MBK201
Fig.1 Simplified outline
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
f
(MHz)
VS
(V)
VC
(V)
PL
(dBm)
Gp
(dB)
η
(%)
ZS , ZL
(Ω)
1710 to 1785
3.5
≤2.2
typ. 33
typ. 33
typ. 40
50
MODE OF
OPERATION
Pulsed; δ = 1 : 8
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VS
PARAMETER
DC supply voltage
CONDITIONS
MIN.
MAX.
UNIT
VC < 0.2 V; PD = 0 mW
−
7
V
VC ≥ 0.2 V
−
4.1
V
VC
DC control voltage
−
2.7
V
PD
input drive power
−
10
dBm
PL
load power
−
34.1
dBm
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−30
+100
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Aug 23
2
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
CHARACTERISTICS
ZS = ZL = 50 Ω; PD = 0 dBm; VS = 3.5 V; VC ≤ 2.2 V; f = 1710 to 1785 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs unles
otherwise specified.
SYMBOL
IQ
PARAMETER
leakage current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VC = 0.2 V
−
−
10
µA
VC = 0.2 V; VS = 7 V
−
5
20
mA
−
3
mA
ICM
peak control current
adjust V C for PL = 32 dBm
−
PL
load power
VC = 2.2 V; VS = 3.5 V
−
33.2
−
dBm
VC = 2.2 V; VS = 3.2 V
32
32.3
−
dBm
VC = 2.2 V; VS = 3.2 V; Tmb = 85 °C
31
31.8
−
dBm
Gp
power gain
PL = 32 dBm
−
32
−
dB
η
efficiency
PL = 32 dBm
−
40
−
%
H2
second harmonic
PL = 32 dBm
−
−
−35
dBc
H3
third harmonic
PL = 32 dBm
−
−
−40
dBc
VSWRin
input VSWR
PL = 2 to 32 dBm
−
stability
VS = 3.2 to 4.1 V; PD = −3 to 3 dBm;
VC = 0 to 2.2 V; PL ≤ 33 dBm;
VSWR ≤ 8 : 1 through all phases
−
−
−60
dBc
isolation
VC = 0.2 V; PD = 3 dBm
control bandwidth
3:1
−
−36
−33
dBm
tbd
−
−
MHz
noise power
PL = 2 to 32 dBm;
bandwidth = 100 kHz; 20 MHz above
transmission band
−
−73
−71
dBm
AM/AM conversion
PD with 3% AM; f = 100 kHz;
PL = 2 to 32 dBm
−
5
8
%
AM/PM conversion
PD = −0.5 to 0.5 dBm;
PL = 2 to 32 dBm
−
−
tbd
deg/dB
control slope
PL = −8 to +2 dBm
−
tbd
−
dB / V
PL = 2 to 32 dBm
−
tbd
−
dB / V
TX / RX conversion
PL = 32 dBm; f = 1785 MHz
PL (1805 MHz) / PD (1765 MHz)
−
28
30
dB
tr
carrier rise time
PL = 2 to 32 dBm; time to settle
within −0.5 dB of final PL
−
1.5
2
µs
tf
carrier fall time
PL = 2 to 32 dBm; time to fall below
− 33 dBm
−
1.5
2
µs
ruggedness
VS = 4.1 V; adjust VC for
PL = 33 dBm; VSWR ≤ 8 : 1 through
all phases
Pn
1999 Aug 23
3
no degradation
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
3
PL
(W)
4
PL
(W)
1710MHz
1710MHz
1785MHz
3
1785MHz
2
2
1
1
0
0
1
1.5
2
2.5
2
3
4
VC (V)
ZS = ZL = 50 Ω; V S = 3.5 V; P D = 0 dBm;
ZS = ZL = 50 Ω; VC = 2.2 V; PD = 0 dBm;
Tmb = 25 °C; δ = 1 : 8; t p = 575 µs.
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.2
Load power as a function of control voltage;
typical values.
Fig.3
50
Load power as a function of supply voltage;
typical values.
3
PL
(W)
η
(%)
5
VS (V)
1785MHz
40
1710MHz
2
30
20
1
10
0
0
0.5
1
1.5
2
0
1700
2.5
1750
PL (W)
ZS = ZL = 50 Ω; V S = 3.5 V; P D = 0 dBm;
ZS = ZL = 50 Ω; VS = 3.5 V; P D = 0 dBm; VC = 2.2 V;
Tmb = 25 °C; δ = 1 : 8; t p = 575 µs.
Fig.4
Tmb = 25 °C; δ = 1 : 8; t p = 575 µs.
Efficiency as a function of load power;
typical values.
1999 Aug 23
1800
f (MHz)
Fig.5
4
Load power as a function of frequency;
typical values.
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
0
H2, H3
(dBc)
4
VSWRIN
-20
3
H2
-40
1710MHz
H3
2
1785MHz
-60
-80
1700
1
0
1
2
3
1750
1800
f (MHz)
PL (W)
ZS = ZL = 50 Ω; V S = 3.5 V; P D = 0 dBm;
ZS = ZL = 50 Ω; VS = 3.5 V; P D = 0 dBm; PL = 1.6 W;
Tmb = 25 °C; δ = 1 : 8; t p = 575 µs
Tmb = 25 °C; δ = 1 : 8; t p = 575 µs.
Fig.6
Input VSWR as a function of load power;
typical values.
Fig.7
16
output
AM
(%)
12
3
PL
(W)
(1)
2
(2)
(3)
(4)
Harmonics as a function of
frequency; typical values.
1710MHz
1785MHz
8
1
4
0
0
0
20
40
60
-20
80
100
Tmb (°C)
0
20
40
PL (dBm)
ZS = Z L = 50 Ω; PD = 0 dBm; VC = 2.2 V; δ = 1 : 8; tp = 575 µs.
(1) VS = 3.5 V; f = 1710 MHz.
(2) VS = 3.5 V; f = 1785 MHz.
ZS = ZL = 50 Ω; VS = 3.5 V; P D = 0 dBm; Tmb = 25 °C;
(3) VS = 3.2 V; f = 1710 MHz.
∆f = 100 kHz; input amplitude modulation = 3%; δ = 1 : 8; tp = 575 µs.
(4) VS = 3.2 V; f = 1785 MHz.
Fig.8
Load power as a function of mounting
base temperature; typical values.
1999 Aug 23
Fig.9
5
Output amplitude modulation as a
function of load power; typical values.
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
Fig.11 Test circuit
List of components (See Fig 10)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1
multilayer ceramic chip capacitor
680 pF
2222 851 11681
C2
multilayer ceramic chip capacitor
100 nF
2222 910 16549
C3
electrolytic capacitor
47 µF; 40 V
Z1 , Z2
stripline; note 1
50 Ω
R1
metal film resistor
100 Ω; 0.6 W
2222 030 37479
width 2.3 mm
−
2322 156 11001
Note
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2);
thickness 1⁄32 inch.
1999 Aug 23
6
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
SOLDERING
The indicated temperatures are those at the solder
interfaces.
MGM159
300
handbook, halfpage
Advised solder types are types with a liquidus less than or
equal to 210 °C.
T
(°C)
Solder dots or solder prints must be large enough to wet
the contact areas.
200
Soldering can be carried out using a conveyor oven, a hot
air oven, an infrared oven or a combination of these ovens.
A double reflow process is permitted.
100
Hand soldering is not recommended because the
soldering iron tip can exceed the maximum permitted
temperature of 250 °C and damage the module.
In case handsoldering is needed, recommendations can
be found in RNR-45-98-A-0485.
0
0
The maximum allowed temperature is 250 °C for a
maximum of 5 seconds.
The maximum ramp-up is 10 °C per second.
2
3
4
t (min)
5
Fig.12 Recommended reflow temperature profile.
The maximum cool-down is 5 °C per second.
Cleaning
The following fluids may be used for cleaning:
• Alcohol
• Bio-Act (Terpene Hydrocarbon)
• Acetone.
Ultrasonic cleaning should not be used since this can
cause serious damage to the product.
1999 Aug 23
1
7
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
4.400
handbook, full pagewidth
4.000
4.000
0
2.5 mm
2.800
3.200
scale
1.800
0.500
0.600
1.400
2.500
1.000
1.800
1.300
14.300
13.500
12.900
10.700
2.250
1.350
(2×)
2.500
4.800 (2×)
1.900
0.800
1.950
0.900
3.200
5.650 (2×)
5.900 (2×)
6.700 (2×)
2.400
13.500
2.250
1.700
1.200
1.300
1.000
0.050
MGS345
0.900
0.900
1.200
1.000
0.600
1.300
Solder land
2.300
3.150
3.700
3.900
Solder paste
Green tape area,
max. height 0.03 mm
Dimensions in mm.
Fig.13 Footprint SOT482C.
1999 Aug 23
0.450
8
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
PACKAGE OUTLINE
Leadless surface mounted package; plastic cap; 4 terminations
e
b
(4×)
e1
e
d
b1 b2
b2
b3
SOT482C
b3
1
2
3
L
4
L1
L2
D
D1
A
c
5
E1
E
pin 1 index
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
b2
b3
c
D
D1
d
E
E1
e
e1
L
L1
L2
mm
1.90
1.59
1.9
1.7
1.4
1.2
0.8
0.6
0.6
0.4
0.70
0.57
13.7
13.3
13.35
13.05
2.0
8.2
7.8
7.85
7.55
2.6
2.4
4.6
4.4
1.15
0.85
2.65
2.35
3.85
3.55
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-05-18
99-08-16
SOT482C
1999 Aug 23
EUROPEAN
PROJECTION
9
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 23
10
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© Philips Electronics N.V. 1999
SCA 67
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Printed in The Netherlands
budgetnum/printrun/ed/pp11
Date of release: 1999
Aug 23
Document order number:
9397 750 06248
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