SSM6K404TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K404TU ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit: mm 2.1±0.1 Ron = 147 mΩ (max) (@VGS = 1.5 V) Ron = 100 mΩ (max) (@VGS = 1.8 V) Ron = 70 mΩ (max) (@VGS = 2.5 V) Ron = 55 mΩ (max) (@VGS = 4.0 V) Rating Unit VDSS 20 V V VGSS ± 10 DC ID 3.0 Pulse IDP 6.0 PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Gate–source voltage Drain current Drain power dissipation 2 5 3 4 +0.06 0.16-0.05 Drain–source voltage Symbol 6 0.7±0.05 Characteristic 1 A +0.1 0.3-0.05 Absolute Maximum Ratings (Ta = 25˚C) 0.65 0.65 1.7±0.1 1.3±0.1 1.5V drive Low ON-resistance: 2.0±0.1 • • 1, 2, 5, 6 : Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) UF6 3 : Gate 4 : Source JEDEC ― JEITA ― 2-2T1D TOSHIBA Weight: 7.0 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 ⎯ ⎯ V V (BR) DSX ID = 1 mA, VGS = -10 V 12 ⎯ ⎯ V Drain cutoff current IDSS VDS =20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Vth VDS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V ⏐Yfs⏐ VDS = 3 V, ID = 2.0 A (Note2) 5.5 11 ⎯ S ID = 2.0 A, VGS = 4.0 V (Note2) ⎯ 43 55 ID = 2.0 A, VGS = 2.5 V (Note2) ⎯ 53 70 ID = 1.0 A, VGS = 1.8 V (Note2) ⎯ 67 100 ID = 0.5 A, VGS = 1.5 V (Note2) 147 RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain Charge Qgd Switching time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 3.0 A VGS = 4 V ⎯ 82 ⎯ 400 ⎯ ⎯ 68 ⎯ ⎯ 60 ⎯ ⎯ 5.9 ⎯ ⎯ 4.1 ⎯ ⎯ 1.8 ⎯ Turn-on time ton VDS = 10 V, ID= 2.0 A ⎯ 14 ⎯ Turn-off time toff VGS = 4 V ⎯ 15 ⎯ ⎯ -0.85 -1.2 Drain–source forward voltage VDSF ID = - 3.0 A, VGS = 0 V (Note2) mΩ pF nC ns V Note 2: Pulse test 1 2007-11-01 SSM6K404TU Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 0V RG 0 10 μs (c) VOUT VDD VDD = 10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C Marking 6 90% IN 5 10% VDD VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 4 6 5 4 3 1 2 3 KKB 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM6K404TU ID – VGS ID – VDS 4.0 V 10 1.8 V 2.5 V Common Source VDS = 3 V (A) (A) 4 1 ID 1.5 V 0.1 Drain current Drain current 5 ID 6 3 2 Ta = 100 °C 0.01 25 °C VGS = 1.2 V − 25 °C 0.001 1 Common Source Ta = 25 °C 0 0.4 0.2 0.6 0.8 Drain–source voltage VDS 0.0001 0 1.0 1.0 VGS (V) RDS (ON) – ID RDS (ON) – VGS 200 200 ID =2.0A Common Source Common Source Ta = 25°C Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) 2.0 Gate–source voltage (V) 100 25 °C Ta = 100 °C 100 1.5V 1.8 V 2.5 V VGS = 4.0 V − 25 °C 0 0 2 4 Gate–source voltage 6 VGS 0 8 0 (V) 4 2 Drain current RDS (ON) – Ta ID Vth – Ta 1.0 200 Common Source Vth (V) 1.0 A / 1.8 V Gate threshold voltage Drain–source ON-resistance RDS (ON) (mΩ) Common Source 100 0.5A / 1.5 V 2.0A / 2.5 V ID = 2.0 A / VGS = 4.0 V 0 −50 6 (A) 0 50 Ambient temperature 100 Ta VDS = 3 V 0.6 0.4 0.2 0 −50 150 (°C) ID = 1 mA 0.8 0 50 Ambient temperature 3 100 Ta 150 (°C) 2007-11-01 SSM6K404TU |Yfs| – ID (S) ⎪Yfs⎪ 10 VDS = 3 V Common Source (A) Common Source 3 1 0.3 0.1 0.03 0.01 0.001 0.1 0.01 Drain current 1 ID S 0.01 100 °C 0.001 25 °C -0.4 −25 °C -0.6 -0.8 Drain–source voltage -1.0 VDS -1.2 (V) t – ID 1000 (ns) t Switching time C 100 Coss Crss Common Source Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7 Ω toff 100 Capacitance -0.2 (A) Ciss 10 0.1 IDR G 0.1 0.0001 0 10 300 30 D C – VDS 1000 (pF) VGS = 0 V 1 IDR Ta = 25 °C Drain reverse current Forward transfer admittance IDR – VDS 10 30 tf 10 t on tr Ta = 25 °C f = 1 MHz VGS = 0 V 1 1 10 Drain–source voltage 100 VDS 0.01 0.1 Drain current (V) 1 ID 10 (A) Dynamic Input Characteristic 10 Common Source Ta = 25°C Gate–Source voltage VGS (V) ID = 3.0A 8 6 VDD=10V 4 VDD=16V 2 0 0 5 Total Gate Charge 15 10 Qg (nC) 4 2007-11-01 SSM6K404TU rth – tw PD – Ta Single Pulse Drain power dissipation PD (mW) Transient thermal impedance Rth (°C/W) 100 Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2) 100 10 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , 2 Cu Pad : 645 mm ) t = 10 s 800 600 DC 400 200 0 -40 1000 (s) -20 0 20 40 60 80 Ambient temperature 5 100 120 140 160 Ta (°C) 2007-11-01 SSM6K404TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01