IXYS CLA50E1200HB High efficiency thyristor Datasheet

CLA 50 E 1200 HB
V RRM =
I T(AV)M =
I T(RMS) =
High Efficiency Thyristor
Single Thyristor
1200 V
50 A
79 A
Part number
2
CLA 50 E 1200 HB
1
3
Backside: anode
Features / Advantages:
Applications:
Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
● Housing: TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
Conditions
Symbol
Definition
VRSM/DSM
max. non-repetitive reverse/forward blocking voltage
VRRM/DRM
max. repetitive reverse/forward blocking voltage
I R/D
reverse current, drain current
VT
forward voltage drop
min.
typ.
1300
TVJ = 25°C
1200
V
TVJ = 25°C
50
µA
VR/D = 1200 V
TVJ = 125 °C
4
mA
TVJ = 25°C
1.32
V
1.60
V
TVJ = 125 °C
1.27
V
IT =
IT =
50 A
50 A
I T = 100 A
I T(AV)M
average forward current
TC = 125 °C
I T(RMS)
RMS forward current
180° sine
threshold voltage
rT
slope resistance
for power loss calculation only
R thJC
thermal resistance junction to case
T VJ
virtual junction temperature
Ptot
total power dissipation
PGM
max. gate power dissipation
1.65
V
T VJ = 150 °C
50
A
79
A
TVJ = 150 °C
0.88
V
7.7
mΩ
0.25
K/W
150
°C
TC = 25°C
500
W
T C = 150 °C
10
W
-40
t P = 30 µs
t P = 300 µs
PGAV
average gate power dissipation
I TSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
V
VR/D = 1200 V
I T = 100 A
VT0
Unit
max.
TVJ = 25°C
5
W
0.5
W
t = 10 ms; (50 Hz), sine
TVJ = 45 °C
550
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
595
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
470
A
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
505
t = 10 ms; (50 Hz), sine
TVJ = 45 °C
1.52 kA²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
1.48 kA²s
TVJ = 150 °C
1.11 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V f = 1 MHz
TVJ = 25°C
Data according to IEC 60747and per diode unless otherwise specified
1.06 kA²s
25
pF
20101215e
CLA 50 E 1200 HB
Ratings
Symbol
Definition
Conditions
(di/dt) cr
critical rate of rise of current
TVJ = 150 °C
min.
repetitive, IT =
typ.
40 A
max.
Unit
150
A/µs
f = 50 Hz; tP = 200 µs
IG =
(dv/dt) cr
critical rate of rise of voltage
VGT
gate trigger voltage
0.3 A; di G /dt =
0.3 A/µs
VD = ⅔ VDRM
non-repetitive, I T = 50 A
500
A/µs
VD = ⅔ VDRM
TVJ = 150 °C
1000
V/µs
TVJ = 25 °C
1.5
V
TVJ = -40 °C
1.6
V
TVJ = 25 °C
50
mA
TVJ = -40 °C
80
mA
TVJ = 150 °C
0.2
V
3
mA
TVJ = 25 °C
125
mA
TVJ = 25 °C
100
mA
TVJ = 25 °C
2
µs
R GK = ∞; method 1 (linear voltage rise)
I GT
gate trigger current
VGD
gate non-trigger voltage
I GD
gate non-trigger current
IL
latching current
VD = 6 V
VD = 6 V
VD = ⅔ VDRM
t p = 10 µs
IG =
IH
holding current
t gd
gate controlled delay time
turn-off time
0.3 A/µs
VD = 6 V R GK = ∞
VD = ½ VDRM
IG =
tq
0.3 A; di G /dt =
0.3 A; di G /dt =
0.3 A/µs
VR = 100 V; I T = 33 A
TVJ = 150 °C
200
µs
VD = ⅔ VDRM ; t p = 200 µs
di/dt = 10 A/µs; dv/dt = 20 V/µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20101215e
CLA 50 E 1200 HB
Ratings
Symbol
Definition
Conditions
I RMS
RMS current
per terminal
R thCH
thermal resistance case to heatsink
Tstg
storage temperature
min.
typ.
max.
Unit
70
0.25
-55
Weight
K/W
150
6
MD
mounting torque
FC
mounting force with clip
A
°C
g
0.8
1.2
Nm
20
120
N
Part number
C
L
A
50
E
1200
HB
Product Marking
Logo
Marking on product
DateCode
Assembly Code
=
=
=
=
=
=
=
Thyristor (SCR)
High Efficiency Thyristor
(up to 1200 V)
Current Rating [A]
Single Part
Reverse Voltage [V]
TO-247AD (3)
abcdef
YYWWZ
000000
Assembly Line
Ordering
Standard
Part Name
CLA 50 E 1200 HB
Similar Part
CLA50E1200TC
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Marking on Product
CLA50E1200HB
Package
TO-268AA (D3Pak)
Delivering Mode
Tube
Base Qty Code Key
30
503748
Voltage class
1200
Data according to IEC 60747and per diode unless otherwise specified
20101215e
CLA 50 E 1200 HB
Outlines TO-247
A
E
A2
Ø P1
ØP
D2
S
Q
D1
D
2x E2
4
1
2
3
L1
E1
L
2x b2
b4
3x b
C
A1
2x e
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Sym.
Inches
min.
max.
Millimeter
min.
max.
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
0.020 0.053
0.530
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
Data according to IEC 60747and per diode unless otherwise specified
20101215e
CLA 50 E 1200 HB
160
900
140
800
10000
VR = 0 V
TVJ = 45°C
700
120
600
100
I2t
ITSM 500
IT
TVJ = 45°C
1000
80
400
[A] 60
[A2s]
[A]
300
TVJ = 125°C
TVJ = 125°C
40
200
TVJ = 125°C
20
100
TVJ = 25°C
0
0.0
0
0.5
1.0
1.5
2.0
50 Hz, 80% VRRM
2.5
0.01
100
0.1
VT [V]
1
1
Fig. 1 Forward characteristics
80
70
60
100
2 3
typ.
tgd
VG
1
IT(AV)M 50
Limit
40
6
[V]
[A]
[µs]
5
4
10
TVJ = 125°C
5: PGM = 1 W
6: PGM = 10 W
IGD, TVJ = 150°C
10
0.1
100
1000
30
20
4: PGAV = 0.5 W
10
5 6 7 8 910
2
1000
1
4
Fig. 3 I t versus time (1-10 ms)
TVJ = 125°C
TVJ = 25°C
TVJ = -40°C
1
3
t [ms]
Fig. 2 Surge overload current
10
1: IGT,
2: IGT,
3: IGT,
2
t [s]
1
10
10000
0
100
1000
0
20 40 60 80 100 120 140 160
TC [°C]
IG [mA]
IG [mA]
Fig. 4 Gate trigger characteristics
Fig. 5 Gate controlled delay time tgd
0.3
Fig. 6 Max. forward current
at case temperature
Ri
ti
0.0075 0.0011
0.017
0.2
ZthJC
0.0019
0.057
0.0115
0.158
0.12
0.0105
0.5
[K/W]
0.1
0.0
0.001
0.01
0.1
1
10
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20101215e
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