Diotec BSS64 Surface mount si-epitaxial planartransistor Datasheet

BSS 64
Switching Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung
1.3 ±0.1
2.5 max
3
Type
Code
2
1
250 mW
Plastic case
Kunststoffgehäuse
1.1
2.9 ±0.1
0.4
1.9
Dimensions / Maße in mm
1=B
2=E
3=C
NPN
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BSS 64
Collector-Emitter-voltage
B open
VCE0
80 V
Collector-Base-voltage
E open
VCB0
120 V
Emitter-Base-voltage
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (dc)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
250 mA
Peak Base current – Basis-Spitzenstrom
IBM
100 mA
Junction temp. – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 90 V
ICB0
–
–
100 nA
IE = 0, VCB = 90 V, Tj = 150/C
ICB0
–
–
50 :A
IEB0
–
1 nA
200 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
1
IC = 4 mA, IB = 0.4 mA
VCEsat
–
–
150 mV
IC = 50 mA, IB = 15 mA
VCEsat
–
–
200 mV
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
16
01.11.2003
Switching Transistors
BSS 64
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 1 V, IC = 1 mA
hFE
–
60
–
VCE = 1 V, IC = 10 mA
hFE
20
80
–
VCE = 1 V, IC = 20 mA
hFE
–
55
–
fT
60 MHz
105 MHz
–
–
3 pF
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 25 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
CCB0
420 K/W 2)
RthA
BSS 63
BSS 64 = AM
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
17
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