BCD AP2302MTR 3a ddr termination regulator Datasheet

Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
General Description
Features
The AP2302 linear regulator is designed to meet the
JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or
source up to 3A current continuously, offers enough
current for most DDR applications. Output voltage is
designed to track the reference voltage within a 2%
(DDR I) and 3% (DDR II) tolerance for load regulation
while preventing shooting through on the output stage.
On-chip thermal limiting provides protection against a
combination of high current and ambient temperature
which would create an excessive junction temperature.
·
Support Both DDR I (1.25VTT) and DDR II
(0.9VTT) Requirements
·
·
·
Source and Sink Current up to 3A
High Accuracy Output Voltage at Full-load
Adjustable VOUT by External Resistors
·
Shutdown for Standby or Suspend
Operation with High-impedance Output
Mode
Applications
The AP2302, used in conjunction with series termination resistors, provides an excellent voltage source for
active termination schemes of high speed transmission
lines as those seen in high speed memory buses and
distributed backplane designs.
·
·
·
DDR-SDRAM Termination
DDR-II Termination
SSTL-2 Termination
The AP2302 is available in SOIC-8, TO-252-5L and
TO-263-5L packages.
SOIC-8
TO-252-5L
TO-263-5L
Figure 1. Package Types of AP2302
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
Pin Configuration
M Package
(SOIC-8)
D Package
(TO-252-5L)
VIN
1
8
VCNTL
GND
2
7
VCNTL
REFEN
3
6
VCNTL
VOUT
4
5
VCNTL
VOUT
5
4
3
REFEN
VCNTL (TAB)
2
1
GND
VIN
S5 Package
(TO-263-5L)
VOUT
REFEN
VCNTL (TAB)
GND
VIN
5
4
3
2
1
Figure 2. Pin Configuration of AP2302 (Top View)
Pin Description
Pin Number
SOIC-8
TO-252-5L
TO-263-5L
Pin
Name
1
1
1
VIN
Power Input
2
2
2
GND
Ground
3
4
4
REFEN
4
5
5
VOUT
Output Voltage
5, 6, 7, 8
3
3
VCNTL
Supply Voltage for Internal Circuit (Internally Connected for SOIC8), (TAB for TO-252-5L and TO-263-5L)
Function
Reference Voltage Input and Chip Enable
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
Functional Block Diagram
VCNTL
VIN
1
3 (5, 6, 7, 8)
CURRENT
LIMIT
A(B)
A for 5-pin
B for 8-pin
BANDGAP
REFEN
OUTPUT
CONTROL
4 (3)
5 (4)
VOUT
START UP
2
THERMAL
PROTECT
GND
Figure 3. Functional Block Diagram of AP2302
Ordering Information
AP2302
E1: Lead Free
Blank: Tin Lead
Circuit Type
Package
M: SOIC-8
D: TO-252-5L
S5: TO-263-5L
Package
SOIC-8
Temperature
Range
TR: Tape and Reel
Blank: Tube
Part Number
Marking ID
Packing Type
Tin Lead
Lead Free
Tin Lead
Lead Free
AP2302M
AP2302M-E1
2302M
2302M-E1
Tube
AP2302MTR
AP2302MTR-E1
2302M
2302M-E1
Tape & Reel
AP2302D
AP2302D-E1
AP2302D
AP2302D-E1
Tube
AP2302DTR
AP2302DTR-E1
AP2302D
AP2302D-E1
Tape & Reel
AP2302S5
AP2302S5-E1
AP2302S5
AP2302S5-E1
Tube
AP2302S5TR
AP2302S5TR-E1
AP2302S5
AP2302S5-E1
Tape & Reel
0 to 125oC
TO-2525L
0 to 125oC
TO-2635L
0 to 125oC
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Supply Voltage for Internal Circuit
VCNTL
7
V
PD
Internally Limited
W
ESD
2
KV
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
oC
Power Dissipation
ESD (Human Body Model)
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
θJA
Package Thermal Resistance (Free Air)
SOIC-8
160
TO-252-5L
130
TO-263-5L
90
oC/W
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
VCNTL (Note 2, 3)
Supply Voltage for Internal Circuit
Typ
Max
Unit
3.3
6
V
VCNTL
V
125
oC
2.5
DDR I
VIN
Power Input
1.6
DDR II
1.8
TJ
Junction Temperature
0
Note 2: Keep VCNTL ≥ VIN in power on and power off sequences.
Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V.
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
Electrical Characteristics
(TJ=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.)
Parameter
Symbol
Output Offset Voltage
VOS
DDR I
Load
Regulation
DDR II
Quiescent Current of VCNTL
Leakage Current in Shutdown Mode
∆VOUT/
VOUT
IQ
ISHDN
Conditions
Min
Typ
Max
Unit
-20
0
20
mV
IL=0 to 1.5A
0.8
2
IL=0 to -1.5A
0.8
2
IL=0 to 1.5A
1.2
3
IL=0 to -1.5A
1.2
3
IL=0A (Note 4)
%
No Load
3
5
mA
VREFEN<0.2V, RL=180Ω
3
6
µA
Protection
Current Limit
ILIMIT
Thermal Shutdown Temperature
TSHDN
3
3.3V≤VCNTL≤5V
Thermal Shutdown Hysteresis
A
150
oC
50
oC
Shutdown Function
Shutdown Threshold Trigger
Output=High
0.8
Output=Low
0.2
V
Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN.
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
Typical Performance Characteristics
6
Sinking Current (A)
Sourcing Current (A)
6
4
VCNTL=3.3V
2
-40
-20
0
20
40
60
4
VCNTL=3.3V
VIN=2.5V
VIN=2.5V
VOUT=1.25V
VOUT=1.25V
80
100
2
-40
120
-20
0
o
60
80
100
120
Figure 5. Sinking Current vs. Junction Temperature
650
Threshold Voltage (mV)
650
Threshold Voltage (mV)
40
Junction Temperature ( C)
Figure 4. Sourcing Current vs. Junction Temperature
600
550
VCNTL=3.3V
VIN=2.5V
500
-40
20
o
Junction Temperature ( C)
-20
0
20
40
60
80
100
600
550
VCNTL=5.0V
VIN=2.5V
500
120
-40
o
Junction Temperature ( C)
-20
0
20
40
60
80
100
120
o
Junction Temperature ( C)
Figure 6. Threshold Voltage vs. Junction Temperature
Figure 7. Threshold Voltage vs. Junction Temperature
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
40
20
20
Output Transient
Voltage (mV)
40
0
-20
0
-20
3
3
1
1
Output
Current (A)
Output
Current (A)
Output Transient
Voltage (mV)
Typical Performance Characteristics (Continued)
-1
-3
-5
-1
-3
-5
Time (µs)
Time (µs)
Figure 9. 1.25VTT at 3A Transient Response
(Conditions: VIN=2.5V, VCNTL=3.3V, COUT=10µF)
Figure 8. 0.9VTT at 3A Transient Response
(Conditions: VIN=2.5V, VCNTL=3.3V, COUT=10µF)
0.30
0.30
VIN=0.9V
VIN=0.85V
0.28
VIN=0.85V
VIN=0.8V
VIN=0.8V
0.26
RDS(ON) (Ω)
0.26
RDS(ON)(Ω)
VIN=0.9V
0.28
0.24
0.22
0.24
0.22
0.20
0.20
VCNTL=3.3V
0.18
VREFEN=1.0V
0.16
0.16
25
50
75
100
VCNTL=5.0V
0.18
VREFEN=1.0V
25
125
o
Junction Temperature ( C)
50
75
100
125
o
Junction Temperature ( C)
Figure 10. RDS(on) vs. Junction Temperature
Figure 11. RDS(on) vs. Junction Temperature
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
Typical Performance Characteristics (Continued)
350
350
300
2
2
Copper Area (mm )
300
Copper Area (mm )
Package: TO-252-5L
No Heatsink
Package: SOIC-8
No Heatsink
250
200
o
TC=25 C
o
o
TC=50 C
o
TC=65 C
200
150
TC=50 C
150
o
TC=25 C
250
o
TC=65 C
100
100
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
6.0
8.0
7.0
7.5
8.0
8.5
9.0
9.5
10.0
Power Dissipation (W)
Power Dissipation (W)
Figure 13. Copper Area vs. Power Dissipation
Figure 12. Copper Area vs. Power Dissipation
350
6.5
Package: TO-263-5L
No Heatsink
2
Copper Area (mm )
300
o
TC=25 C
250
o
TC=50 C
o
TC=65 C
200
150
100
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
Power Dissipation (W)
Figure 14. Copper Area vs. Power Dissipation
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
Typical Application
VCNTL = 3.3V
VIN = 2.5V
VIN
R1
REFEN
EN
RTT
CCNTL
VCNTL
AP2302
CIN
VOUT
GND
R2
CSS
COUT
RDUMMY
Figure 15. Typical Application of AP2302
R1=R2=100KΩ, RTT=50Ω / 33Ω / 25Ω
RDUMMY=1KΩ, as for VOUT discharge when VIN is not present but VCNTL is present
CSS=1µF, CIN=470µF, CCNTL=47µF, COUT=470µF
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
9
Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
Mechanical Dimensions
SOIC-8
Unit: mm(inch)
4.800(0.189)
5.000(0.197)
7°
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.300(0.012)
R0.150(0.006)
0.100(0.004)
φ 0.800(0.031)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.190(0.007)
0.250(0.010)
Jul. 2006 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
Mechanical Dimensions (Continued)
TO-252-5L
0.900(0.035)
1.250(0.049)
6.350(0.250)
6.700(0.264)
4.300(0.169)
5.500(0.217)
Unit: mm(inch)
2.180(0.086)
2.400(0.094)
4.800(0.189)
MIN
0.430(0.017)
0.600(0.023)
5.970(0.235)
6.220(0.245)
9.500(0.374)
10.400(0.410)
4.300(0.169)
5.400(0.213)
0.000(0.000)
0.250(0.010)
2.540(0.100)BSC
5.080(0.200)
BSC
0.450(0.018)
0.700(0.028)
0.430(0.017)
0.600(0.023)
1.400(0.055)
1.780(0.070)
Jul. 2006 Rev. 1. 2
2.550(0.100)
3.200(0.126)
BCD Semiconductor Manufacturing Limited
11
Preliminary Datasheet
3A DDR TERMINATION REGULATOR
AP2302
Mechanical Dimensions (Continued)
TO-263-5L
4.470 (0.176)
4.670 (0.184)
9.880 (0.389)
10.180 (0.401)
1.170 (0.046)
1.370 (0.054)
5.600 (0.220)
REF
15.140 (0.596)
15.540 (0.612)
1.560 (0.061)
1.760 (0.069)
Unit: mm(inch)
8.200 (0.323)
8.600 (0.339)
0.020(0.001)
0.250(0.010)
5.080 (0.200)
5.480 (0.216)
1.700 (0.067)
TYP
6.700 (0.264)
6.900 (0.272)
0.710 (0.028)
0.910 (0.036)
Jul. 2006 Rev. 1. 2
0.310 (0.012)
0.530 (0.021)
2.340 (0.092)
2.740 (0.108)
BCD Semiconductor Manufacturing Limited
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