Comchip CDBW120-G Smd schottky barrier diode Datasheet

SMD Schottky Barrier Diodes
CDBW120-G Thru. CDBW140-G
Forward current: 1.0A
Reverse voltage: 20 to 40V
RoHS Device
Features
SOD-123
-For use in low voltage, high frequency inverters.
-Free wheeling, and polarity protection applications.
0.152 (3.85)
0.140 (3.55)
Mechanical Data
0.026 (0.65)
0.018 (0.45)
-Case: SOD-123, molded plastic.
0.067 (1.70)
0.059 (1.50)
-Terminals: solderable per MIL-STD-750, method
2026.
0.110 (2.80)
0.102 (2.60)
-Polarity: indicated by cathode end.
-Weight: 0.0097 gram(approx.).
0.006 (0.15)max
0.049 (1.25)
Marking
0.041 (1.05)
0.004 (0.10)max
CDBW120-G: SJ
0.02 (0.50)REF
CDBW130-G: SK
CDBW140-G: SL
Dimensions in inches and (millimeter)
Maximum Ratings (At Ta=25°C, unless otherwise noted)
Symbol
CDBW120-G
CDBW130-G
CDBW140-G
Unit
Non-repetitive peak reverse voltage
VRM
20
30
40
V
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
20
30
40
V
VR(RMS)
14
21
28
V
Parameter
RMS reverse voltage
Average rectified output current
IO
1
A
Peak forward surge current @8.3ms
IFSM
25
A
Repetitive peak forward current
IFRM
625
mA
PD
250
mW
Thermal resistance, junction to ambient
RθJA
500
°C/W
Storage temperature
TSTG
-65 ~ +150
°C
Power dissipation
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Parameter
Conditions
Symbol
Min.
20
30
40
Reverse breakdown voltage
CDBW120-G
CDBW130-G
CDBW140-G
IR=1mA
VBR
Reverse voltage leakage current
CDBW120-G
CDBW130-G
CDBW140-G
VR=20V
VR=30V
VR=40V
IR
CDBW120-G
CDBW130-G
CDBW140-G
IF=1A
Forward voltage
1
mA
0.45
0.55
0.60
V
0.75
0.875
0.90
IF=3A
VR=4V, f=1MHz
Unit
V
VF
CDBW120-G
CDBW130-G
CDBW140-G
Diode capacitance
Max.
CD
120
pF
REV:D
Page 1
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Comchip Technology CO., LTD.
SMD Schottky Barrier Diodes
RATING AND CHARACTERISTIC CURVES (CDBW120-G Thru. CDBW140-G)
Fig.2 Maximum Non-Repetitive Peak
Forward Surge Current
Fig.1 Typical Forward Current Derating Curve
30
Peak Forward Surge Current (A)
Average Forward Current (A)
2
1
0.5
Inductive or resistive load
0.375" (9.5mm) lead length
0
50
25
75
100
125
150
15
10
5
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60Hz
Fig.3 Typical Instantaneous Forward
Characteristics
Fig.4 Typical Reverse Characteristics
100
100
Instantaneous Reverse Voltage (mA)
Instantaneous Forward Current (A)
20
0
0
O
TJ=125 C
10
O
TJ=25 C
1
0.1
Pulse width=300μs
1% duty cycle
0.01
TJ=125
10
O
1.0
TJ=75 OC
0.1
O
TJ=25 C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1.8
20
40
60
80
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig.5 Typical Junction Capacitance
Fig.6 Typical Transient Thermal Impedance
100
100
Transient Thermal Impedance (°CW)
1000
O
TJ=25 C
f=1MHz
Vsig=50mV
Junction Capacitance (pF)
25
100
10
0.1
1
10
100
10
1
0.1
0.01
Reverse Voltage (V)
0.1
1
10
100
t-Pulse Duration (Sec.)
REV:D
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Comchip Technology CO., LTD.
SMD Schottky Barrier Diodes
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
Polarity
P
C
A
12
o
0
D2
D1 D
W1
Trailer
.......
.......
End
Device
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOD-123
SOD-123
SYMBOL
A
B
C
d
D
D1
D2
(mm)
1.90 ± 0.10
4.00 ± 0.10
1.50 ± 0.10
1.55 ± 0.10
178 ± 1.00
50.0 MIN.
13.0 ± 0.20
(inch)
0.075 ± 0.04
0.157 ± 0.04
0.059 ± 0.04
0.061 ± 0.04
7.00 ± 0.039
1.968 MIN.
0.512 ± 0.079
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
8.00 ± 0.30
14.4 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.002
0.315 ± 0.011
0.567 MAX
REV:D
Page 3
QW-BB020
Comchip Technology CO., LTD.
SMD Schottky Barrier Diodes
Marking Code
Part Number
Marking Code
CDBW120-G
SJ
CDBW130-G
SK
CDBW140-G
SL
XX
xx = Product type marking code
Suggested PAD Layout
SOD-123
SIZE
D
(mm)
(inch)
A
3.35
0.132
B
0.80
0.032
C
1.00
0.039
D
4.15
0.163
E
2.55
0.100
A
E
C
B
Standard Packaging
REEL PACK
Case Type
SOD-123
REEL
Reel Size
( pcs )
(inch)
3,000
7
REV:D
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Comchip Technology CO., LTD.
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