ISC BUH315 Silicon npn power transistor Datasheet

Inchange Semiconductor
Product Specification
BUH315
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High voltage
·High speed switching
APPLICATIONS
·Horizontal deflection for color TV
·Switch mode power supplies.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
6
A
ICM
Collector current-peak
12
A
IB
Base current (DC)
3
A
IBM
Base current-peak
tp<5ms
5
A
Ptot
Total power dissipation
TC=25℃
44
W
150
℃
-65~150
℃
Tj
Tstg
Operating junction temperature
Storage temperature
tp<5ms
Inchange Semiconductor
Product Specification
BUH315
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
700
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=0.75A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.75A
1.3
V
ICES
Collector cut-off current
VCE=1500V; VBE=0
0.2
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=3A ; VCE=5V
Tj=100℃
6
3.5
MAX
UNIT
12
Switching times resistive load
ts
Storage time
2.4
μs
0.2
μs
IC=3A;IB1=0.75A;IB2=1.5A
VCC=400V
tf
Fall time
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
2
MAX
UNIT
2.8
℃/W
Inchange Semiconductor
Product Specification
BUH315
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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