RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. · Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. · Complementary to RN2961FE~RN2966FE Equivalent Circuit and Bias Resistor Values C R2 B R1 E Type No. R1 (kW) R2 (kW) RN1961FE 4.7 4.7 RN1962FE 10 10 RN1963FE 22 22 RN1964FE 47 47 RN1965FE 2.2 47 RN1966FE 4.7 47 JEDEC ― JEITA ― TOSHIBA ― Weight: Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage RN1961FE~ 1966FE RN1961FE~ 1964FE RN1965FE, 1966FE Collector current Collector power dissipation RN1961FE~ RN1966FE Junction temperature Storage temperature range g (typ.) (top view) Symbol Rating Unit VCBO 50 V VCEO 50 V 6 5 4 Q2 Q1 10 VEBO V 5 IC 1 100 mA 100 mW Tj 150 °C Tstg -55~150 °C PC (Note) 2 3 Note: Total rating 1 2002-01-29 RN1961FE~RN1966FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Collector cut-off current Symbol Test Condition ¾ 100 ICEO VCE = 50 V, IB = 0 ¾ ¾ 500 0.82 ¾ 1.52 0.38 ¾ 0.71 0.17 ¾ 0.33 0.082 ¾ 0.15 0.078 ¾ 0.145 0.074 ¾ 0.138 RN1961FE 30 ¾ ¾ RN1962FE 50 ¾ ¾ 70 ¾ ¾ 80 ¾ ¾ RN1965FE 80 ¾ ¾ RN1966FE 80 ¾ ¾ ¾ 0.1 0.3 RN1961FE 1.1 ¾ 2.0 RN1962FE 1.2 ¾ 2.4 1.3 ¾ 3.0 1.5 ¾ 5.0 RN1965FE 0.6 ¾ 1.1 RN1966FE 0.7 ¾ 1.3 1.0 ¾ 1.5 0.5 ¾ 0.8 VCE = 10 V, IC = 5 mA ¾ 250 ¾ MHz VCB = 10 V, IE = 0, f = 1 MHz ¾ 3 6 pF RN1961FE 3.29 4.7 6.11 RN1962FE 7 10 13 15.4 22 28.6 32.9 47 61.1 RN1965FE 1.54 2.2 2.86 RN1966FE 3.29 4.7 6.11 RN1961FE~1964FE 0.9 1.0 1.1 RN1963FE RN1964FE VEB = 10 V, IC = 0 IEBO VEB = 5 V, IC = 0 RN1966FE Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Input resistor Resistor ratio Unit ¾ RN1965FE Collector-emitter saturation voltage Max VCB = 50 V, IE = 0 RN1962FE DC current gain Typ. ICBO RN1961FE~1966FE RN1961FE Emitter cut-off current Min RN1963FE RN1964FE RN1961FE~1966FE RN1963FE RN1964FE RN1961FE~1964FE RN1965FE, 1966FE RN1961FE~1966FE RN1961FE~1966FE RN1963FE RN1964FE RN1965FE hFE VCE (sat) VI (ON) VI (OFF) fT Cob R1 R1/R2 RN1966FE VCE = 5 V, IC = 10 mA IC = 5 mA, IB = 0.25 mA VCE = 0.2 V, IC = 5 mA VCE = 5 V, IC = 0.1 mA ¾ ¾ mA V V V kW 0.0421 0.0468 0.0515 0.09 2 nA 0.1 0.11 2002-01-29 RN1961FE~RN1966FE Type Name Marking Type name RN1961FE XXA Type name RN1962FE XXB Type name RN1963FE XXC Type name RN1964FE XXD Type name RN1965FE XXE Type name RN1966FE XXF 3 2002-01-29 RN1961FE~RN1966FE RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2002-01-29