TriQuint AGR26125EU 125 w, 2.5 ghz-2.7 ghz, n-channel e-mode, lateral mosfet Datasheet

AGR26125E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
Table 1. Thermal Characteristics
The AGR26125E is a high-voltage, gold-metalized,
enhancement mode, laterally diffused metal oxide
semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications
including multichannel multipoint distribution service
(MMDS) for broadcasting and communications.
)
Parameter
Thermal Resistance,
Junction to Case:
AGR26125EU
AGR26125EF
Sym
Value
Unit
Rı JC
Rı JC
0.5
0.5
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
AGR26125EU (unflanged)
5B 03 STYLE 1
AGR26125EF (flanged)
Figure 1. Available Packages
Features
Typical pulsed P1dB, 6 µs pulse at 10% duty: 125 W.
Typical performance for MMDS systems.
f = 2600 MHz, IDQ = 1300 mA, Vds = 28 V,
adjacent channel BW = 3.84 MHz, 5 MHz offset;
alternate channel BW = 3.84 MHz, 10 MHz offset.
Typical P/A ratio of 9.8 dB at 0.01% (probability)
CCDF*:
— Output power: 20 W
— Power gain: 11.5 dB.
— Power Added Efficiency (PAE): 19%.
— ACLR1: –35 dBc.
— ACLR2: –37 dBc.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2600 MHz, 125 W continuous wave (CW) output power.
Large signal impedance parameters available.
*The test signal utilized is 4-channel W-CDMA Test Model 1. This
test signal provides an equivalent reference (occupied bandwidth
and waveform EPF) for the actual performance with an MMDS
waveform.
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at TC = 25 °C:
AGR26125EU
AGR26125EF
Derate Above 25 °C:
AGR26125EU
AGR26125EF
Operating Junction Temperature
Storage Temperature Range
Sym Value Unit
VDSS
65
Vdc
VGS –0.5, +15 Vdc
PD
PD
350
350
W
W
—
—
TJ
2.0
2.0
200
W/°C
W/°C
°C
TSTG –65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR26125E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR 26125 E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
M in
Typ
Max
Unit
V(BR)DSS
IGSS
IDSS
65
—
—
—
—
—
—
4
200
12
Vdc
µAdc
µAdc
GFS
—
—
—
—
9
—
3.8
0.08
—
4.8
—
—
S
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Un i t
CRSS
—
3.0
—
pF
—
11.5
—
dB
IM3
—
–38
—
dBc
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
ACPR
—
–41
—
dBc
Power Output, 1 dB Compression Point
(VDD = 28 V, fC = 2600.0 MHz, 6 µs pulse at 10% duty)
IRL
P1dB
—
–15
—
dB
Off Characteristics
200 µA)
Drain-source Breakdown Voltage (VGS = 0, ID = 400
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1 A)
Gate Threshold Voltage (VDS = 10 V, ID = 400 µA)
Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA)
Drain-source On-voltage (VGS = 10 V, ID = 1 A)
VGS(TH)
VGS(Q)
VDS(ON)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
(in Supplied
Test Fixture)
Functional Tests (in
Agere Systems
Supplied Test Fixture)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
Input Return Loss*
Output Mismatch Stress
(VDD = 28 V, POUT = 125 W (CW), IDQ = 1300 mA, fC = 2600.0 MHz
VSWR = 10:1; [all phase angles])
GPS
η
ψ
—
—
20
125
—
%
—
W
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2590.0 MHz, and f2 = 2600 MHz. V DD = 28 Vdc, IDQ = 1300 mA, and
POUT = 20 W avg.
AGR 26125 E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
M in
Typ
Max
Unit
V(BR)DSS
IGSS
IDSS
65
—
—
—
—
—
—
4
12
Vdc
µAdc
µAdc
GFS
—
—
—
—
9
—
3.8
0.08
—
4.8
—
—
S
Vdc
Vdc
Vdc
Symbol
Min
Typ
Max
Un i t
CRSS
—
3.0
—
pF
—
11.5
—
dB
IM3
—
–38
—
dBc
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
ACPR
—
–41
—
dBc
Power Output, 1 dB Compression Point
(VDD = 28 V, fC = 2600.0 MHz, 6 µs pulse at 10% duty)
IRL
P1dB
—
–15
—
dB
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 200 µA)
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1 A)
Gate Threshold Voltage (VDS = 10 V, ID = 400 µA)
Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA)
Drain-source On-voltage (VGS = 10 V, ID = 1 A)
VGS(TH)
VGS(Q)
VDS(ON)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IMD3 measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
Input Return Loss*
Output Mismatch Stress
(VDD = 28 V, POUT = 125 W (CW), IDQ = 1300 mA, fC = 2600.0 MHz
VSWR = 10:1; [all phase angles])
GPS
η
ψ
—
—
20
125
—
%
—
W
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2590.0 MHz, and f2 = 2600 MHz. V DD = 28 Vdc, IDQ = 1300 mA, and
POUT = 20 W avg.
AG R261 25E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
AGR26125E Component Layout
2
1
3
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
A. Schematic
Parts List:
? Microstrip Line: Z1: 0.785 in. x 0.066 in.;
Z2: 0.180 in. x 0.066 in.; Z3 0.315 in. x 0.176 in.;
Z4: 0.238 in. x 0.176 in.; Z5: 0.096 in. x 0.066 in.;
Z6: 0.070 in. x 0.140 in.; Z7: 0.216 in. x 0.050 in.;
Z8: 0.310 in. x 0.860 in.; Z9: 0.342 in. x 1.050 in.;
Z10: 0.723 in. x 0.038 in.; Z11: 0.723 in. x 0.038 in.;
Z12: 0.405 in. x 0.165 in.; Z13: 0.103 in. x 0.076 in.;
Z14: 0.194 in. x 0.076 in.; Z15: 0.465 in. x 0.114 in.;
Z16: 0.252 in. x 0.066 in.
®
? ATC chip capacitor:
C1: 6.8 pF series 100B;
C5, C6A, C6B, C13A, C13B,
C14A, C14B, C15: 4.7 pF series 100B;
C7A, C7B: 1.2 pF series 100B;
C16: 0.4 pF series 100A.
®
? Murata capacitor C8A, C8B: 0.01 µF case 0805.
®
? Vitramon capacitor C3: 22000 pF case 1206
®
? Kemet capacitor C4, C9A, C9B,
C10A, C10B: 22 µF, 35V;
C2, C11A, C11B, C12A, C12B: 0.1 µF case 1206.
®
? Fair-Rite ferrite bead: FB1: 2743019447.
? 1206 chip resistor: R1: 1 kΩ; R2: 560 kΩ; R3: 4.7 Ω.
? WB1, WB2: 10 mil thick, 0.6 in. x 0.18 in.
®
? Taconic RF-35 board material, 1 oz. copper,
30 mil thickness, εr = 3.5
B. Component Layout
Figure 2. AGR26125E Component Layout
AGR 26125 E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
U CT
0.6
90
IN D
0.
8
10
0.1
0.4
20
50
20
10
5.0
4.0
3.0
1.8
2.0
1.6
1.4
1.2
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
± 180
0.1
0.2
0.2
20
0.4
IV
CT
IN
DU
0
5
-90
0.12
0.13
0.38
0.37
0.11
-100
0.1
9
0.0
-70
-1
06
5
0.
0.
07
30
-1
0.
43
8
0.0
0.4
2
0.4
1
0.4
0.39
F
0.36
0.
2.
1.8
1.2
1.0
0.9
-4
0.14
-80
0.35
-110
0
0
-4
0.15
0.6
1.6
1.4
0.7
-70
-5
6
4
0
-12
(-j
40
Z
X/
0.1
0.3
0.8
35
5
3
-60
-5
0.3
7
VE
-60
0.1
CA P
AC
I TI
T
5
,O
o)
R
0.2
-30
32
CE
CO
M
-65
18
0.
RE
AC
TA
N
EN
0.
0
-5
-25
PO
N
-85
1.
0
U
ES
0.4
31
0.
19
0.
0.
-75
0.6
0.0
0
-20
0
44
0.8
0.48
o)
jB/ Y
E (NC
TA
EP
SC
0
1.
4.0
3.
0.3
0
-15
6
0.4
4
0.0
0
-15 -80
5.0
0.2
.45
0.2
8
-30
f5
-4
4
0.
0.2
9
0.2
1
0.3
ZS
0.2
2
7
0.4
8
0.
f1
-10
f5
0.2
f1
0.6
ZL
10
0.1
-20
D<
RD L OA
TOW A
TH S
-170
EN G
V EL
A
W
<Ð
-90
-160
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
0.49
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
EFL ECTI ON COEFFI CI EN T I
N
R
D
E
G
REES
L E OF
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
L E OF
ANG
Z0 = 10 Ω
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
0.48
170
Typical Performance Characteristics
MHz (f)
2500 (f1)
2535 (f2)
2595 (f3)
2655 (f4)
2700 (f5)
ZS Ω
(complex source impedance)
18.0 – j14.9
15.7 – j15.8
12.0 – j16.0
9.0 – j15.3
7.5 – j14.6
ZL Ω
(complex optimum load impedance)
2.5 – j3.7
2.3 – j3.5
2.1 – j3.2
1.9 – j2.9
1.7 – j2.7
DRAIN (6, 7)
GATE (2, 3)
ZS
ZL
SOURCE (9)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
AG R261 25E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
60
15
10
GAIN
50
5
PAE
45
0
40
-5
P1dB
35
-10
30
-15
IRL
25
20
2500
2550
2600
GAIN (dB), IRL (dB)Z
POWER (dBm), PAE (%)A
55
-20
-25
2700
2650
FREQUENCY, MHzA
Figure 4. CW Broadband Performance
-25
45
IM3
-30
40
-35
35
dBcZ
-40
IM5
30
-45
25
-50
20
IM7
-55
15
-60
10
-65
5
-70
1
10
100
POUT (W, PEP)Z
Test Conditions:
Two-tone measurement @ 10 MHz tone spacing, VDD = 28 Vdc, F1 = 2590 MHz, F2 = 2600 MHz.
Figure 5. Two-tone IMD vs. Power
0
1000
AGR 26125 E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
0
-10
IMD (dBc)Z
-20
IM3
-30
IM5
-40
IM7
-50
-60
0.1
1
10
100
TONE SPACING (MHz)Z
Test Conditions:
VDD = 28 V, IDQ = 1200 mA, POUT = 110 W (PEP), F = 2595 MHz.
0
30
-10
25
PAE
-20
20
IMD
-30
15
-40
GAIN
ACP
-50
-60
10
10
15
PAE (%), GAIN (dB)Z
IMD, ACP (dBc)Z
Figure 6. Two-tone IMD vs. Tone Spacing
5
20
25
30
POUT (W)Z
35
40
0
Test Conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, F1 = 2590 MHz, F2 = 2600 MHz; VDD = 28 V, IDQ = 1200 mA.
Figure 7. Two-carrier W-CDMA Performance
AG R261 25E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
2
4
8
10
12
14
16
18
PAE
-5
ACLR1, ACLR2 (dBc)Z
6
20
22
20
18
-10
16
-15
14
-20
12
GAIN
-25
10
-30
8
-35
6
-40
PAE (%), GAIN (dB)Z
0
4
ACLR1
ACLR2
-45
-50
2
0
POUT (W)Z
Test Conditions:
Four-carrier W-CDMA 3GPP test model 1, peak-to-average = 9.8 dB @ 0.01% CCDF, F = 2595 MHz, VDD = 28 V, IDQ = 1200 mA.
Figure 8. Four-carrier W-CDMA Performance
AGR 26125 E
125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Cut lead indicates drain.
AGR26125EU
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
PEAK DEVICES
AGR26125EU
1
3
XXXX
3
2
2
AGR26125EF
1
PEAK DEVICES
AGR26125EF
1
3
3
XXXX
2
XXXX = 4 DIGIT TRACE CODE
PINS:
1. DRAIN
2. GATE
3. SOURCE
2
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