Infineon BSP317P Sipmos small-signal-transistor Datasheet

BSP317P
SIPMOS Small-Signal-Transistor
Feature
Product Summary
• P-Channel
VDS
• Enhancement mode
R DS(on)
• Logic Level
ID
• dv/dt rated
-250
V
4
Ω
-0.43
A
PG-SOT223
Drain
pin 2/4
x Qualified according to AEC Q101
4
Gate
pin1
3
Source
pin 3
Type
BSP317P
Package
PG-SOT223
2
1
VPS05163
Packaging
Tape and Reel Information
Marking
L6327: 1000 pcs/reel
BSP317P Non dry
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TA=25°C
-0.43
TA=70°C
-0.34
ID puls
-1.72
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
1.8
W
-55... +150
55/150/56
°C
Pulsed drain current
TA=25°C
Reverse diode dv/dt
kV/µs
IS =-0.43A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C
TA=25°C
Tj , Tstg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
2.1
5
Rev.1.6
Page 1
2011­04­19
BSP317P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
15
25
@ min. footprint
-
80
115
@ 6 cm 2 cooling area 1)
-
48
70
Characteristics
Thermal resistance, junction - soldering point
RthJS
K/W
(Pin 4)
SMD version, device on PCB:
RthJA
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
-250
-
-
-1
-1.5
-2
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
V
VGS =0, ID=-250µA
Gate threshold voltage, VGS = VDS
VGS(th)
ID =-370µA
Zero gate voltage drain current
µA
IDSS
VDS =-250V, VGS =0, Tj =25°C
-
-0.1
-0.2
VDS =-250V, VGS =0, Tj =150°C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
3.3
5
Ω
RDS(on)
-
3
4
Gate-source leakage current
VGS =-20V, VDS =0
Drain-source on-state resistance
VGS =-4.5V, ID =-0.39A
Drain-source on-state resistance
VGS =-10V, ID =-0.43A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.1
Page 2
2011­04­19
BSP317P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
|VDS|≥2*|ID |*RDS(on)max , 0.38
0.76
-
S
pF
Dynamic Characteristics
Transconductance
gfs
ID =-0.34A
Input capacitance
Ciss
VGS =0, VDS =-25V,
-
210
262
Output capacitance
Coss
f=1MHz
-
30
37
Reverse transfer capacitance
Crss
-
13.4
16.7
Turn-on delay time
td(on)
VDD =-30V, VGS=-10V,
-
5.7
8.5
Rise time
tr
ID =-0.43A, RG =6Ω
-
11.1
16.6
Turn-off delay time
td(off)
-
254
381
Fall time
tf
-
67
100
-
-0.5
-
-4
-5.2
-
-11.6
-15.1
V(plateau) VDD =-200V, ID=-0.43A
-
-2.8
-
IS
-
-
-0.43 A
-
-
-1.72
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =-200V, ID=-0.43A
VDD =-200V, ID=-0.43A,
-0.65 nC
VGS =0 to -10V
Gate plateau voltage
V
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage VSD
Reverse recovery time
trr
VGS =0, IF =-0.43A
-
-0.84
-1.2
V
VR =-125V, IF =lS ,
-
92
138
ns
Reverse recovery charge
diF /dt=100A/µs
-
210
315
nC
Rev.2.1
Qrr
Page 3
2011­04­19
BSP317P
1 Power dissipation
2 Drain current
Ptot = f (TA )
ID = f (TA )
parameter: |VGS | ≥ 10V
1.9
BSP 317 P
-0.5
W
BSP 317 P
A
1.6
-0.4
1.4
1.2
ID
Ptot
-0.35
1
-0.3
-0.25
0.8
-0.2
0.6
-0.15
0.4
-0.1
0.2
-0.05
0
0
20
40
60
80
100
°C
120
0
0
160
20
40
60
80
100
120
TA
160
TA
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJA = f (tp )
parameter : D = 0 , TA = 25°C
parameter : D = tp /T
-10
°C
1 BSP 317 P
10 2
BSP 317 P
K/W
A
tp = 140.0µs
10 1
/I
Z thJA
D
-10 0
on
)
=
V
ID
DS
1 ms
DS
(
10 ms
10 -1
R
-10 -1
10 0
D = 0.50
0.20
10
-2
0.10
0.05
-10 -2
0.02
DC
-10 -3 -1
-10
-10
0
-10
1
-10
2
10 -3
V
-10
3
VDS
Rev.2.1
10 -4 -7
10
0.01
single pulse
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Page 4
2011­04­19
BSP317P
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS )
RDS(on) = f (ID )
parameter: Tj =25°C, -VGS
parameter: VGS ; Tj =25°C, -VGS
10
10V
A 5V
4.4V
3.6V
3.2V
1.2
2.8V
2.4V
1 2.2V
Ω
2.2V
2.4V
2.8V
3.2V
3.6V
4.4V
5V
10V
8
RDS(on)
-I D
1.6
7
6
5
0.8
4
0.6
3
0.4
2
0.2
0
0
1
0.5
1
1.5
2
2.5
3
3.5
4
0
0
5
V
0.2
0.4
0.6
0.8
1
1.2
A
1.6
-ID
-VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); |VDS|≥ 2 x |ID | x RDS(on)max
gfs = f(ID)
parameter: Tj = 25 °C
parameter: Tj =25°C
1.6
1.4
S
A
1.2
1.1
1.2
g fs
-I D
1
1
0.9
0.8
0.8
0.7
0.6
0.6
0.5
0.4
0.4
0.3
0.2
0.2
0.1
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
V
3.6
0.2
0.4
0.6
0.8
1
1.2
A
1.6
-ID
-VGS
Rev.2.1
0
0
Page 5
2011­04­19
BSP317P
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj)
parameter : ID = -0.43 A, VGS = -10 V
parameter: VGS = VDS
11
BSP 317 P
2.4
V
Ω
98%
2
VGS(th)
RDS(on)
9
8
7
1.8
typ.
1.6
1.4
6
1.2
5
98%
2%
1
4
0.8
typ
3
0.6
2
0.4
1
0.2
0
-60
-20
20
60
100
°C
0
-60
180
-20
20
60
100
Tj
°C
160
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS =0, f=1 MHz, Tj = 25°C
parameter: Tj
10
3
-10 1
pF
BSP 317 P
A
Ciss
IF
-10 0
C
10 2
Coss
Crss
10 1
-10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
0
4
8
12
16
20
24
28
V
36
-VDS
Rev.2.1
-10 -2
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4 V
-3
VSD
Page 6
2011­04­19
BSP317P
13 Typ. gate charge
14 Drain-source breakdown voltage
VGS = f (QGate)
V(BR)DSS = f (Tj )
parameter: ID = -0.43 A pulsed, Tj = 25°C
-16
BSP 317 P
BSP 317 P
-300
V
V(BR)DSS
V
VGS
-12
-10
-285
-280
-275
-270
-265
-8
-260
-255
-6
-250
-4
-2
20%
-245
50%
-240
80%
-235
-230
0
0
2
4
6
8
10
12
14
nC
18
|Q G|
Rev.2.1
-225
-60
-20
20
60
100
°C
180
Tj
Page 7
2011­04­19
BSP317P
Rev.2.1
Page 8
2011­04­19
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