Central CMPD2004C Surface mount high voltage switching diode Datasheet

Central
CMPD2003
^ CMPD2003C
^ CMPD2003S
CMPD2004
^ CMPD2004C
CMPD2004S
TM
Semiconductor Corp.
DESCRIPTION
SURFACE MOUNT
HIGH VOLTAGE SWITCHING DIODE
The CENTRAL SEMICONDUCTOR CMPD2003,
CMPD2003C, CMPD2003S, CMPD2004,
CMPD2004C, and CMPD2004S types are silicon
switching diodes manufactured by the epitaxial
planar process, designed for applications
requiring high voltage capability.
SOT-23 CASE
The following configurations are available:
CMPD2003
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004C
CMPD2004S
SINGLE
DUAL, COMMON CATHODE
DUAL, IN SERIES
SINGLE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MAXIMUM RATINGS (TA=25°C)
Continuous Reverse Voltage
Peak RepetitiveReverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 ms
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
MARKING CODE:
MARKING CODE:
MARKING CODE:
MARKING CODE:
MARKING CODE:
MARKING CODE:
A82
C3C
C3S
D53
DB7
DB6
CMPD2003
CMPD2004
CMPD2003C CMPD2004C
CMPD2003S CMPD2004S
200
240
250
300
200
200
250
225
625
625
4000
4000
1000
1000
350
TJ,Tstg
QJA
-65 to +150
357
UNITS
V
V
mA
mA
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
BVR
IR
TEST CONDITIONS
IR=100mA
VR=200V
CMPD2003
CMPD2003C
CMPD2003S
MIN
MAX
250
100
170
CMPD2004
CMPD2004C
CMPD2004S
MIN
MAX
300
-
UNIT
V
nA
CMPD2003
CMPD2003C
CMPD2003S
MIN
MAX
SYMBOL
TEST CONDITIONS
IR
IR
IR
VF
VF
CT
trr
VR=200V, TA=150°C
VR=240V
VR=240V, TA=150°C
IF=100mA
IF=200mA
VR=0, f=1 MHz
IF=IR=30mA, Rec. TO 3.0mA, RL=100W
CMPD2004
CMPD2004C
CMPD2004S
MIN
MAX
100
1.0
1.25
5.0
50
100
100
1.0
5.0
50
UNIT
mA
nA
mA
V
V
pF
ns
TOP VIEW
All Dimensions in Inches (mm).
120,1$/
120,1$/
0$;,080
0$;,080
1&
$
&
CMPD2003
CMPD2004
$
$
&&
CMPD2003C
CMPD2004C
&
$
$&
CMPD2003S
CMPD2004S
R3
171
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