AMD AM27C256-150PC 256 kilobit (32 k x 8-bit) cmos epro Datasheet

FINAL
Am27C256
256 Kilobit (32 K x 8-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
■ Fast access time
■ Latch-up protected to 100 mA from –1 V to
VCC + 1 V
— Speed options as fast as 45 ns
■ High noise immunity
■ Low power consumption
■ Versatile features for simple interfacing
— 20 µA typical CMOS standby current
■ JEDEC-approved pinout
— Both CMOS and TTL input/output compatibility
■ Single +5 V power supply
— Two line control functions
■ Standard 28-pin DIP, PDIP, and 32-pin PLCC
packages
■ ±10% power supply tolerance standard
■ 100% Flashrite™ programming
— Typical programming time of 4 seconds
GENERAL DESCRIPTION
The Am27C256 is a 256-Kbit, ultraviolet erasable programmable read-only memory. It is organized as 32K
words by 8 bits per word, operates from a single +5 V
supply, has a static standby mode, and features fast
single address location programming. Products are
available in windowed ceramic DIP packages, as well
as plastic one time programmable (OTP) PDIP and
PLCC packages.
Data can be typically accessed in less than 55 ns, allowing high-performance microprocessors to operate
without any WAIT states. The device offers separate
Output Enable (OE#) and Chip Enable (CE#) controls,
thus eliminating bus contention in a multiple bus microprocessor system.
AMD’s CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 80 mW in active mode, and
100 µW in standby mode.
All signals are TTL levels, including programming signals. Bit locations may be programmed singly, in
blocks, or at random. The device supports AMD’s
Flashrite programming algorithm (100 µs pulses), resulting in a typical programming time of 4 seconds.
BLOCK DIAGRAM
VCC
VSS
Data Outputs
DQ0–DQ7
VPP
OE#
CE#
A0–A14
Address
Inputs
Output Enable
Chip Enable
and
Prog Logic
Output
Buffers
Y
Decoder
Y
Gating
X
Decoder
262,144
Bit Cell
Matrix
08007I-1
Publication# 08007 Rev: I
Issue Date: May 1998
Amendment/0
PRODUCT SELECTOR GUIDE
Family Part Number
Am27C256
VCC = 5.0 V ± 5%
Speed Options
-255
VCC = 5.0 V ± 10%
-45
-55
-70
-90
-120
-150
-200
Max Access Time (ns)
45
55
70
90
120
150
200
250
CE# (E#) Access (ns)
45
55
70
90
120
150
200
250
OE# (G#) Access (ns)
30
35
40
40
50
50
50
50
CONNECTION DIAGRAMS
Top View
A14
A13
VCC
PLCC
28
VCC
A12
2
27
A14
4 3 2 1 32 31 30
A7
3
26
A13
A6
5
29
A8
6
28
A9
27
26
A11
NC
A6
4
25
A8
A5
A5
5
24
A9
A4
7
8
DU
1
VPP
VPP
A7
A12
DIP
A4
6
23
A11
A3
A3
7
22
OE# (G#)
A2
9
25
OE# (G#)
A2
8
21
A10
A1
10
24
A10
A0
11
23
CE# (E#)
NC
12
22
DQ0
13
21
DQ7
DQ6
A1
9
20
CE# (E#)
A0
10
19
DQ7
DQ0
11
18
DQ6
DQ1
12
17
DQ5
DQ2
13
16
DQ4
VSS
14
15
DQ3
DQ5
DQ4
DQ3
VSS
DU
DQ1
DQ2
14 15 16 17 18 19 20
08007I-3
08007I-2
Notes:
1. JEDEC nomenclature is in parenthesis.
2. Don’t use (DU) for PLCC.
PIN DESIGNATIONS
A0–A14
= Address Inputs
CE# (E#)
= Chip Enable Input
DQ0–DQ7
= Data Input/Outputs
OE# (G#)
= Output Enable Input
VCC
= VCC Supply Voltage
VPP
= Program Voltage Input
VSS
= Ground
NC
= No Internal Connection
LOGIC SYMBOL
15
8
A0–A14
DQ0–DQ7
CE# (E#)
OE# (G#)
08007I-4
2
Am27C256
ORDERING INFORMATION
UV EPROM Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
AM27C256
-45
D
C
B
OPTIONAL PROCESSING
Blank = Standard Processing
B
= Burn-In
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE
D = 28-Pin Ceramic DIP (CDV028)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am27C256
256 Kilobit (32 K x 8-Bit) CMOS UV EPROM
Valid Combinations
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
AM27C256-45
DC, DCB, DI, DIB
AM27C256-55
AM27C256-70
AM27C256-90
AM27C256-120
DC, DCB, DI, DIB, DE, DEB
AM27C256-150
AM27C256-200
AM27C256-255
VCC = 5.0 V ± 5%
DC, DCB, DI, DIB
Am27C256
3
ORDERING INFORMATION
OTP EPROM Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
AM27C256
-55
P
C
OPTIONAL PROCESSING
Blank = Standard Processing
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
PACKAGE TYPE
P = 28-Pin Plastic DIP (PD 028)
J = 32-Pin Square Plastic Leaded Chip Carrier (PL 032)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am27C256
256 Kilobit (32 K x 8-Bit) CMOS OTP EPROM
Valid Combinations
Valid Combinations
AM27C256-55
JC, PC
AM27C256-70
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
AM27C256-90
AM27C256-120
JC, PC, JI, PI
AM27C256-150
AM27C256-200
AM27C256-255
4
Am27C256
FUNCTIONAL DESCRIPTION
Device Erasure
In order to clear all locations of their programmed contents, the device must be exposed to an ultraviolet light
source. A dosage of 15 W seconds/cm2 is required to
completely erase the device. This dosage can be obtained by exposure to an ultraviolet lamp—wavelength
of 2537 Å—with intensity of 12,000 µW/cm2 for 15 to 20
minutes. The device should be directly under and about
one inch from the source, and all filters should be removed from the UV light source prior to erasure.
Note that all UV erasable devices will erase with light
sources having wavelengths shorter than 4000 Å, such
as fluorescent light and sunlight. Although the erasure
process happens over a much longer time period, exposure to any light source should be prevented for
maximum system reliability. Simply cover the package
window with an opaque label or substance.
Device Programming
Upon delivery, or after each erasure, the device has
all of its bits in the “ONE”, or HIGH state. “ZEROs” are
loaded into the device through the programming procedure.
The device enters the programming mode when 12.75
V ± 0.25 V is applied to the VPP pin, OE# is at VIH and
CE# is at VIL.
For programming, the data to be programmed is applied 8 bits in parallel to the data pins.
The flowchar t in the Programming section of the
EPROM Products Data Book (Section 5, Figure 5-1)
shows AMD’s Flashrite algorithm. The Flashrite algorithm reduces programming time by using a 100 µs programming pulse and by giving each address only as
many pulses to reliably program the data. After each
pulse is applied to a given address, the data in that address is verified. If the data does not verify, additional
pulses are given until it verifies or the maximum pulses
allowed is reached. This process is repeated while sequencing through each address of the device. This part
of the algorithm is done at VCC = 6.25 V to assure that
each EPROM bit is programmed to a sufficiently high
threshold voltage. After the final address is completed,
the entire EPROM memory is verified at VCC = VPP =
5.25 V.
Please refer to Section 5 of the EPROM Products Data
Book for additional programming information and specifications.
Program Inhibit
Programming different data to multiple devices in parallel is easily accomplished. Except for CE#, all like inputs of the devices may be common. A TTL low-level
program pulse applied to one device’s CE# input with
VPP = 12.75 V ± 0.25 V and OE# HIGH will program
that particular device. A high-level CE# input inhibits
the other devices from being programmed.
Program Verify
A verification should be performed on the programmed
bits to determine that they were correctly programmed.
The verify should be performed with OE# at VIL, CE# at
VIH, and VPP between 12.5 V and 13.0 V.
Autoselect Mode
The autoselect mode provides manufacturer and device identification through identifier codes on DQ0–
DQ7. This mode is primarily intended for programming
equipment to automatically match a device to be programmed with its corresponding programming algorithm. This mode is functional in the 25°C ± 5°C
ambient temperature range that is required when programming the device.
To activate this mode, the programming equipment
must force VH on address line A9. Two identifier bytes
may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH (that is, changing
the address from 00h to 01h). All other address lines
must be held at VIL during the autoselect mode.
Byte 0 (A0 = VIL) represents the manufacturer code,
and Byte 1 (A0 = VIH), the device identifier code. Both
codes have odd parity, with DQ7 as the parity bit.
Read Mode
To obtain data at the device outputs, Chip Enable (CE#)
and Output Enable (OE#) must be driven low. CE# controls the power to the device and is typically used to select the device. OE# enables the device to output data,
independent of device selection. Addresses must be
stable for at least tACC –tOE. Refer to the Switching
Waveforms section for the timing diagram.
Standby Mode
The device enters the CMOS standby mode when CE#
is at VCC ± 0.3 V. Maximum VCC current is reduced to
100 µA. The device enters the TTL-standby mode
when CE# is at VIH. Maximum VCC current is reduced
to 1.0 mA. When in either standby mode, the device
places its outputs in a high-impedance state, independent of the OE# input.
Output OR-Tieing
To accommodate multiple memory connections, a
two-line control function provides:
■ Low memory power dissipation, and
■ Assurance that output bus contention will not occur.
CE# should be decoded and used as the primary device-selecting function, while OE# be made a common
Am27C256
5
connection to all devices in the array and connected to
the READ line from the system control bus. This assures that all deselected memory devices are in their
low-power standby mode and that the output pins are
only active when data is desired from a particular memory device.
these transient current peaks is dependent on the output capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and VSS to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM arrays, a 4.7 µF bulk electrolytic capacitor should be used
between VCC and VSS for each eight devices. The location of the capacitor should be close to where the
power supply is connected to the array.
System Applications
During the switch between active and standby conditions, transient current peaks are produced on the rising and falling edges of Chip Enable. The magnitude of
MODE SELECT TABLE
Mode
CE#
OE#
A0
A9
VPP
Outputs
Read
VIL
VIL
X
X
X
DOUT
Output Disable
X
VIH
X
X
X
High Z
Standby (TTL)
VIH
X
X
X
X
High Z
VCC ± 0.3 V
X
X
X
X
High Z
Program
VIL
X
X
X
VPP
DIN
Program Verify
VIL
VIL
X
X
VPP
DOUT
Program Inhibit
VIH
VIH
X
X
VPP
High Z
Manufacturer Code
VIL
VIL
VIL
VH
X
01h
Device Code
VIL
VIL
VIH
VH
X
10h
Standby (CMOS)
Autoselect
(Note 3)
Notes:
1. VH = 12.0 V ± 0.5 V.
2. X = Either VIH or VIL.
3. A1–A8 and A10–14 = VIL
4. See DC Programming Characteristics for VPP voltage during programming.
6
Am27C256
ABSOLUTE MAXIMUM RATINGS
OPERATING RANGES
Storage Temperature
OTP Products. . . . . . . . . . . . . . . . . . –65°C to +125°C
All Other Products . . . . . . . . . . . . . . –65°C to +150°C
Commercial (C) Devices
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C
Ambient Temperature (TA) . . . . . . . . . . .0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . .–40°C to +85°C
Voltage with Respect to VSS
All pins except A9, VPP, VCC . . –0.6 V to VCC + 0.6 V
Extended (E) Devices
A9 and VPP (Note 2) . . . . . . . . . . . . . –0.6 V to 13.5 V
Supply Read Voltages
VCC (Note 1). . . . . . . . . . . . . . . . . . . . . –0.6 V to 7.0 V
VCC for ± 5% devices . . . . . . . . . . +4.75 V to +5.25 V
VCC for ± 10% devices . . . . . . . . . +4.50 V to +5.50 V
Notes:
1. Minimum DC voltage on input or I/O pins –0.5 V. During
voltage transitions, the input may overshoot VSS to –2.0 V
for periods of up to 20 ns. Maximum DC voltage on input
and I/O pins is VCC + 5 V. During voltage transitions, input
and I/O pins may overshoot to VCC + 2.0 V for periods up
to 20 ns.
Ambient Temperature (TA) . . . . . . . .–55°C to +125°C
Operating ranges define those limits between which the functionality of the device is guaranteed.
2. Minimum DC input voltage on A9 is –0.5 V. During voltage
transitions, A9 and VPP may overshoot VSS to –2.0 V for
periods of up to 20 ns. A9 and VPP must not exceed +13.5
V at any time.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure of
the device to absolute maximum ratings for extended periods
may affect device reliability.
Am27C256
7
DC CHARACTERISTICS over operating range (unless otherwise specified)
Parameter
Symbol
Parameter Description
Test Conditions
Min
Max
2.4
Unit
VOH
Output HIGH Voltage
IOH = –400 µA
V
VOL
Output LOW Voltage
IOL = 2.1 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
ILI
Input Load Current
VIN = 0 V to VCC
ILO
Output Leakage Current
VOUT = 0 V to VCC
ICC1
VCC Active Current (Note 2)
CE# = VIL, f = 10 MHz,
IOUT = 0 mA
25
mA
ICC2
VCC TTL Standby Current
CE# = VIH
1.0
mA
ICC3
VCC CMOS Standby Current
CE# = VCC ± 0.3 V
100
µA
IPP1
VPP Supply Current (Read)
CE# = OE# = VIL, VPP = VCC
100
µA
0.45
V
2.0
VCC + 0.5
V
–0.5
+0.8
V
1.0
µA
C/I Devices
1.0
E Devices
5.0
µA
Caution: The device must not be removed from (or inserted into) a socket when VCC or VPP is applied.
Notes:
1. VCC must be applied simultaneously or before VPP, and removed simultaneously or after VPP..
2. ICC1 is tested with OE# = VIH to simulate open outputs.
30
30
25
25
Supply Current
in mA
Supply Current
in mA
3. Minimum DC Input Voltage is –0.5 V. During transitions, the inputs may overshoot to –2.0 V for periods less than 20 ns.
Maximum DC Voltage on output pins is VCC + 0.5 V, which may overshoot to VCC + 2.0 V for periods less than 20 ns.
20
15
Figure 1.
8
2
3
4
5
6
7
Frequency in MHz
8
9
15
10
–75 –50 –55
10
1
20
10
0 25 50 75 100 125 150
Temperature in °C
08007I-5
08007I-6
Typical Supply Current vs. Frequency
VCC = 5.5 V, T = 25°C
Figure 2. Typical Supply Current vs. Temperature
VCC = 5.5 V, f = 10 MHz
Am27C256
TEST CONDITIONS
Table 1.
5.0 V
-45, -55
and -70
Test Condition
2.7 kΩ
Device
Under
Test
Test Specifications
Output Load
CL
30
Input Pulse Levels
08007I-7
Figure 3.
100
pF
≤ 20
Input Rise and Fall Times
Note:
Diodes are IN3064 or equivalents.
Unit
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
6.2 kΩ
All
others
ns
0.0–3.0
0.45–2.4
V
Input timing measurement
reference levels
1.5
0.8, 2.0
V
Output timing measurement
reference levels
1.5
0.8, 2.0
V
Test Setup
SWITCHING TEST WAVEFORM
3V
2.4 V
2.0 V
2.0 V
Test Points
1.5 V
Test Points
1.5 V
0.8 V
0V
0.8 V
0.45 V
Input
Output
Output
Input
Note: For CL = 30 pF.
Note: For CL = 100 pF.
08007I-8
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
KS000010-PAL
Am27C256
9
AC CHARACTERISTICS
Parameter Symbols
JEDEC
Standard
tAVQV
tACC
tELQV
Am27C256
Description
Test Setup
-45
-55
-70
-90
-120 -150 -200 -255 Unit
Address to Output Delay
CE#,
Max
OE# = VIL
45
55
70
90
120
150
200
250
ns
tCE
Chip Enable to Output Delay
OE# = VIL Max
45
55
70
90
120
150
200
250
ns
tGLQV
tOE
Output Enable to Output
Delay
CE# = VIL Max
30
35
40
40
50
50
50
50
ns
tEHQZ
tGHQZ
tDF
(Note 2)
Chip Enable High or Output
Enable High to Output High Z,
Whichever Occurs First
Max
25
25
25
25
30
30
30
30
ns
tAXQX
tOH
Output Hold Time from
Addresses, CE# or OE#,
Whichever Occurs First
Min
0
0
0
0
0
0
0
0
ns
Caution: Do not remove the device from (or insert it into) a socket or board that has VPP or VCC applied.
Notes:
1. VCC must be applied simultaneously or before VPP, and removed simultaneously or after VPP.
2. This parameter is sampled and not 100% tested.
3. Switching characteristics are over operating range, unless otherwise specified.
4. See Figure 3 and Table 1 for test specifications.
SWITCHING WAVEFORMS
2.4
Addresses
0.45
2.0
0.8
2.0
0.8
Addresses Valid
CE#
tCE
OE#
tDF (Note 2)
tOE
Output
High Z
tACC
(Note 1)
tOH
High Z
Valid Output
08007I-9
Notes:
1. OE# may be delayed up to tACC – tOE after the falling edge of the addresses without impact on tACC.
2. tDF is specified from OE# or ‘CE#, whichever occurs first.
PACKAGE CAPACITANCE
Parameter Symbol
CIN
COUT
Parameter
Description
CDV028
Test Conditions
PD 028
Typ
Max
Typ
Max
Typ
Max
Unit
Input Capacitance
VIN = 0
8
12
8
12
6
10
pF
Output Capacitance
VOUT = 0
8
12
8
12
8
10
pF
Notes:
1. This parameter is only sampled and not 100% tested.
2. TA = +25°C, f = 1 MHz.
10
PL 032
Am27C256
PHYSICAL DIMENSIONS*
CDV028—28-Pin Ceramic Dual In-Line Package, UV Lens (measured in inches)
DATUM D
CENTER PLANE
UV Lens
.565
.605
INDEX AND
TERMINAL NO. 1
I.D. AREA
1
TOP VIEW
DATUM D
CENTER PLANE
1.435
1.490
.160
.220
BASE PLANE
SEATING PLANE
.015
.060
.700
MAX
94°
105°
.125
.200
.300 BSC
.005 MIN
.600
BSC
.045
.065
.008
.018
.100 BSC
.014
.026
END VIEW
SIDE VIEW
16-000038H-3
CDV028
DF10
3-30-95 ae
* For reference only. BSC is an ANSI standard for Basic Space Centering.
PD 028—28-Pin Plastic Dual In-Line Package (measured in inches)
1.440
1.480
.600
.625
15
28
.530
.580
Pin 1 I.D.
.008
.015
.630
.700
14
.045
.065
0°
10°
.005 MIN
.140
.225
SEATING PLANE
.120
.160
.090
.110
.014
.022
.015
.060
Am27C256
16-038-SB-AG
PD 028
DG75
7-13-95 ae
11
PHYSICAL DIMENSIONS
PL 032—32-Pin Plastic Leaded Chip Carrier (measured in inches)
.447
.453
.485
.495
.009
.015
.585
.595
.042
.056
.125
.140
Pin 1 I.D.
.080
.095
.547
.553
SEATING
PLANE
.400
REF.
.490
.530
.013
.021
.050 REF.
.026
.032
TOP VIEW
SIDE VIEW
16-038FPO-5
PL 032
DA79
6-28-94 ae
l
REVISION SUMMARY FOR AM27C256
Revision I
Ordering Information
UV EPROM Products: Added the AM27C256-45 Valid
Combination.
Global
Changed formatting to match current data sheets.
Test Conditions
Distinctive Characteristics
Fast access time: Changed “Speed options as fast as
55 ns” to “Speed options as fast as 45 ns”.
Table 1. Test Specifications: Added the -45 speed option.
AC Characteristics
Product Selector Guide
Added the -45 speed option.
Added the -45 speed option.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc.
Flashrite is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
12
Am27C256