Fairchild FDMC8588 N-channel powertrenchâ® mosfet 25 v, 40 a, 5.7 mî© Datasheet

FDMC8588
N-Channel PowerTrench® MOSFET
25 V, 40 A, 5.7 mΩ
Features
General Description
„ Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16.5 A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
„ State-of-the-art switching performance
„ Lower output capacitance, gate resistance, and gate charge
boost efficiency
„ Shielded gate technology reduces switch node ringing and
increases immunity to EMI and cross conduction
Applications
„ RoHS Compliant
„ High side switching for high end computing
„ High power density DC-DC synchronous buck converter
Bottom
Top
S
D
D
D
Pin 1
S
S
G
D
S
D
S
D
S
D
G
D
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
(Note 5)
Ratings
25
Units
V
VGS
Gate to Source Voltage
(Note 4)
±12
V
Drain Current
- Continuous (Package limited) TC = 25 °C
- Continuous (Silicon Limited)
ID
40
TC = 25 °C
- Continuous
59
(Note 1a)
- Pulsed
PD
TJ, TSTG
A
60
Single Pulse Avalanche Energy
EAS
16.5
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
29
26
(Note 1a)
Operating and Storage Junction Temperature Range
2.4
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
TC = 25 °C
RθJA
Thermal Resistance, Junction to Ambient
TA = 25 °C
4.7
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
08OD
Device
FDMC8588
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D3
Package
Power 33
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC8588 N-Channel PowerTrench® MOSFET
June 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA , VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
25
ID = 250 μA , referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
IGSS
Gate to Source Leakage Current, Forward VGS = 12 V, VDS = 0 V
V
17
mV/°C
1
μA
100
nA
1.8
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA , referenced to 25 °C
-4
VGS = 10 V, ID = 17 A
3.5
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 16.5 A
4.3
5.7
VGS = 10 V, ID = 17 A,TJ = 125 °C
4.8
6.9
VDD = 5 V, ID = 16.5 A
85
gFS
Forward Transconductance
0.8
1.4
mV/°C
5.0
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
1228
pF
441
pF
69
pF
0.5
Ω
8
ns
3
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge at 4.5V
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 16.5A,
VGS = 10 V, RGEN = 6 Ω
VDD = 13 V, ID = 16.5 A
25
ns
2
ns
12
nC
3.0
nC
3.3
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2 A
(Note 2)
0.7
1.2
VGS = 0 V, IS = 16.5 A
(Note 2)
0.8
1.2
IF = 16.5 A, di/dt = 100 A/μs
V
V
25
ns
10
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 29 mJ is based on starting TJ = 25 °C, L = 1.2 mH, IAS = 7 A, VDD = 23 V, VGS = 10V. 100% tested at L = 0.1 mH, IAS = 16 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
5. The continuous Vds rating is 25V; however, a pulse of 28 V peak voltage for no longer than 3ns duration at 500KHz frequency can be applied.
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D3
2
www.fairchildsemi.com
FDMC8588 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
3.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
VGS = 10 V
ID, DRAIN CURRENT (A)
50
VGS = 4.5 V
VGS = 4 V
40
VGS = 3 V
30
VGS = 2.5 V
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
0
0.0
0.2
0.4
0.6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.5
VGS = 2.5 V
2.0
VGS = 4 V
1.5
1.0
VGS = 4.5 V
0.5
0
10
Figure 1. On Region Characteristics
rDS(on), DRAIN TO
0.8
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.0
-50
60
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
15
ID = 16.5 A
10
TJ = 125 oC
5
TJ = 25 oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs. Junction Temperature
60
IS, REVERSE DRAIN CURRENT (A)
60
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
50
ID, DRAIN CURRENT (A)
50
20
1.2
0.6
-75
40
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
ID = 16.5 A
VGS = 10 V
1.4
30
VGS = 10 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
20
VGS = 3 V
VDS = 5 V
40
TJ = 150 oC
30
TJ = 25 oC
20
TJ =
-55 oC
10
0
0.5
1.0
1.5
2.0
2.5
TJ = 150 oC
10
TJ = 25 oC
1
TJ = -55 oC
0.1
0.0
3.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D3
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
3
www.fairchildsemi.com
FDMC8588 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3000
Ciss
ID = 16.5 A
3.6
VDD = 10 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
VDD = 13 V
2.7
VDD = 15 V
1.8
1000
0.9
Coss
Crss
100
f = 1 MHz
VGS = 0 V
0.0
0
2
4
6
8
10
30
0.1
12
Figure 7. Gate Charge Characteristics
30
10
ID, DRAIN CURRENT (A)
70
TJ = 25 oC
TJ = 100 oC
TJ
= 125 oC
60
VGS = 10 V
50
40
30
Limited by Package
VGS = 4.5 V
20 R = 4.7 oC/W
θJC
10
1
0.001
0.01
0.1
1
10
0
25
100
50
tAV, TIME IN AVALANCHE (ms)
125
150
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
P(PK), PEAK TRANSIENT POWER (W)
1000
100 μs
10
0.1
100
o
100
1
75
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
ID, DRAIN CURRENT (A)
10
Figure 8. Capacitance vs. Drain
to Source Voltage
50
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
10 s
RθJA = 125 oC/W
DC
TA = 25 oC
0.01
0.01
0.1
1
10
100200
10
SINGLE PULSE
RθJA = 125 oC/W
1
TA = 25 oC
0.5 -4
10
10
-3
-2
10
-1
10
0
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D3
100
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC8588 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 125 C/W
1E-3
5E-4 -4
10
-3
10
-2
10
-1
0
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D3
5
www.fairchildsemi.com
FDMC8588 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3.40
3.20
8
PKG
C
L
3.40
2.37 MIN
A
(0.45) 8
B
5
1
2.15 MIN
1.70
3.40
3.20
PKG C
L
KEEP
OUT
AREA
SYM
C
L
5
0.70 MIN
(0.40)
(0.65)
4
1
SEE
DETAIL A
4
0.65
0.42 MIN
1.95
LAND PATTERN
RECOMMENDATION
0.10 C A B
0.37
0.27
1
PKG
C
L
1.95
0.65
4
0.50
0.30
(0.20)
2.09
(1.65) 1.89
(0.67)
(0.39)
0.52
8
5
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. BA,
D ATED OCTOBER 2002.
B) ALL D IMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS D O N OT IN CLUDE BUR RS
OR MOLD FLASH. MOLD FLASH OR
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AN D TOLERANCING PER
ASME Y14.5M-1994.
E) IT IS RECOMMENDED TO HAVE NO TR ACES
OR VIAS WITHIN THE KEEP OUT AREA.
F) DRAWING FILE NAME: PQFN08BREV2
(2.27)
0.10 C
1.00
0.85
0.08 C
0.23
0.18
0.05
0.00
DETAIL A
C
SEATING
PLANE
SCALE: 2X
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D3
6
www.fairchildsemi.com
FDMC8588 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D3
7
www.fairchildsemi.com
FDMC8588 N-Channel PowerTrench® MOSFET
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