NXP BSR13 Npn switching transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BSR13; BSR14
NPN switching transistors
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 13
NXP Semiconductors
Product data sheet
NPN switching transistors
BSR13; BSR14
FEATURES
PINNING
• High current (max. 800 mA)
PIN
• Low voltage (max. 40 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• Switching and linear applications.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complements: BSR15 and BSR16.
handbook, halfpage
3
3
MARKING
1
TYPE NUMBER
MARKING CODE(1)
BSR13
U7*
BSR14
U8*
1
Top view
2
2
MAM255
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
BSR13
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
BSR14
2004 Jan 13
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
NPN switching transistors
BSR13; BSR14
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
CONDITIONS
collector-base voltage
UNIT
−
60
V
−
75
V
BSR13
−
30
V
BSR14
−
40
V
BSR13
−
5
V
BSR14
−
6
V
BSR14
VEBO
MAX.
open emitter
BSR13
VCEO
MIN.
collector-emitter voltage
open base
emitter-base voltage
open collector
IC
collector current (DC)
−
800
mA
ICM
peak collector current
−
800
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
collector cut-off current
IE = 0; VCB = 50 V
−
30
nA
IE = 0; VCB = 50 V; Tj = 150 °C
−
10
µA
IE = 0; VCB = 60 V
−
10
nA
IE = 0; VCB = 60 V; Tj = 150 °C
−
10
µA
BSR13
−
30
nA
BSR14
−
10
nA
BSR13
collector cut-off current
BSR14
IEBO
2004 Jan 13
emitter cut-off current
IC = 0; VEB = 5 V
3
NXP Semiconductors
Product data sheet
NPN switching transistors
SYMBOL
hFE
PARAMETER
MIN.
MAX.
UNIT
35
−
IC = 1 mA; VCE = 10 V; note 1
50
−
IC = 10 mA; VCE = 10 V; note 1
75
−
IC = 150 mA; VCE = 10 V; note 1
100
300
IC = 150 mA; VCE = 1 V; note 1
50
−
BSR13
30
−
BSR14
40
−
BSR13
−
400
mV
BSR14
−
300
mV
BSR13
−
1 .6
V
BSR14
−
1
V
BSR13
−
1 .3
V
BSR14
0.6
1.2
V
BSR13
−
2 .6
V
BSR14
−
2
V
collector-emitter saturation voltage
collector-emitter saturation voltage
VBEsat
CONDITIONS
IC = 0.1 mA; VCE = 10 V; note 1
DC current gain
DC current gain
VCEsat
BSR13; BSR14
base-emitter saturation voltage
base-emitter saturation voltage
IC = 500 mA; VCE = 10 V; note 1
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
Cc
collector capacitance
IE = Ie = 0; VCB = 10 V; f = 1 MHz
−
8
pF
fT
transition frequency
IC = 20 mA; VCE = 20 V;
f = 100 MHz
250
−
MHz
300
−
MHz
−
35
ns
BSR13
BSR14
Switching times (between 10% and 90% levels); see Fig.2
ton
turn-on time
ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
td
delay time
−
15
ns
tr
rise time
−
20
ns
toff
turn-off time
−
250
ns
ts
storage time
−
200
ns
tf
fall time
−
60
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Jan 13
4
NXP Semiconductors
Product data sheet
NPN switching transistors
BSR13; BSR14
VBB
handbook, full pagewidth
RB
oscilloscope
VCC
RC
Vo
(probe)
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = ≥ 100 Ω.
Fig.2 Test circuit for switching times.
2004 Jan 13
5
oscilloscope
NXP Semiconductors
Product data sheet
NPN switching transistors
BSR13; BSR14
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 13
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
6
NXP Semiconductors
Product data sheet
NPN switching transistors
BSR13; BSR14
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 13
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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Printed in The Netherlands
R75/04/pp8
Date of release: 2004 Jan 13
Document order number: 9397 750 12419
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