AP2302AGN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
▼ Lower Gate Charge
BVDSS
20V
RDS(ON)
42mΩ
ID
▼ Surface Mount Package
4.6A
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
D
Description
AP2302A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The special design SOT-23 package with good thermal
performance is widely preferred for all commercial-industrial surface
mount applications using infrared reflow technique and suited for
voltage conversion or switch applications.
G
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
+8
V
3
ID@TA=25℃
Drain Current , VGS @ 4.5V
4.6
A
ID@TA=70℃
3
3.7
A
20
A
1.38
W
Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201501212
AP2302AGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
VGS=4.5V, ID=4A
-
-
42
mΩ
VGS=2.5V, ID=3A
-
-
60
mΩ
0.3
-
1.2
V
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=4A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
ID=4A
-
6.5
10.5
nC
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.5
-
nC
VDS=10V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
16
-
ns
tf
Fall Time
VGS=5V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
300
480
pF
Coss
Output Capacitance
VDS=20V
-
85
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
-
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2302AGN-HF
20
30
o
5.0V
4.5V
3.5V
o
T A =150 C
2.5V
20
5.0V
4.5V
3.5V
2.5V
16
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 C
V G =2.0V
10
12
V G =2.0V
8
4
0
0
0
1
2
3
4
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
3
4
Fig 2. Typical Output Characteristics
1.8
50
I D =3A
T A =25 o C
I D =4A
V G =4.5V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
40
1.4
1.2
1.0
30
0.8
0.6
20
0
1
2
3
4
5
-50
6
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.6
I D =250uA
1.4
o
o
T j =150 C
IS (A)
Normalized VGS(th)
6
T j =25 C
4
1.2
1
0.8
0.6
2
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2302AGN-HF
f=1.0MHz
500
I D =4A
V DS =10V
400
6
C (pF)
VGS , Gate to Source Voltage (V)
8
4
C iss
300
200
2
100
C oss
C rss
0
0
0
2
4
6
8
10
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this
area limited by
RDS(ON)
ID (A)
10
Normalized Thermal Response (Rthja)
DUTY=0.5
100us
1
1ms
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
0.01
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
0.01
Single Pulse
Duty factor = t/T
Peak T j = PDM x Rthja + Ta
Rthja = 270℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP2302AGN-HF
MARKING INFORMATION
Part Number : M6
M6SS
Date Code : SS
SS:2004,2008,2012,2016,2020...
SS:2003,2007,2011,2015,2019...
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