PHILIPS BUK714R1-40BT Trenchmos standard level fet Datasheet

BUK71/794R1-40BT
TrenchMOS™ standard level FET
Rev. 01 — 4 November 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices
include TrenchPLUS diodes for over-temperature protection.
Product availability:
BUK714R1-40BT in SOT426 (D2-PAK)
BUK794R1-40BT in SOT263B (TO-220AB).
1.2 Features
■ Integrated temperature sensor
■ Very low on-state resistance
■ Q101 compliant
■ 175 °C rated.
1.3 Applications
■ Electrical Power Assisted Steering
■ Motors, lamps and solenoids
■ 12 V loads
■ General purpose power switching.
1.4 Quick reference data
■
■
■ ID ≤ 75 A
■ Ptot ≤ 272 W.
RDSon = 3.4 mΩ (typ)
VDS ≤ 40 V
2. Pinning information
Table 1:
Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin
Description
1
gate (g)
2
anode (a)
3
drain (d)
4
cathode (k)
5
source (s)
mb
mounting base;
connected to drain (d)
Simplified outline
Symbol
mb
d
a
s
k
mb
g
1 2 3 4 5
03nm72
Front view
SOT426 (D2-PAK)
MBK127
1
5
MBL263
SOT263B (TO-220AB)
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
3. Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
VDGR
drain-gate voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current (DC)
Conditions
RGS = 20 kΩ
Min
Max
Unit
-
40
V
-
40
V
-
±20
V
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
[1]
-
187
A
[2]
-
75
A
Tmb = 100 °C; VGS = 10 V; Figure 2
[2]
-
75
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
-
748
A
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
272
W
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
[1]
-
187
A
[2]
-
75
A
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
748
A
unclamped inductive load; ID = 75 A;
VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω;
starting Tmb = 25 °C
-
1.5
J
Human Body Model; C = 100 pF;
R = 1.5 kΩ
-
4
kV
Source-drain diode
reverse drain current (DC)
IDR
IDRM
peak reverse drain current
Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
Electrostatic discharge
Vesd
[1]
[2]
Electrostatic discharge voltage; pins
1,3,5
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
2 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
03na19
120
03nm69
200
ID
(A)
Pder
(%)
150
80
100
40
50
Capped at 75 A due to package
0
0
0
50
100
150
200
Tmb (°C)
0
50
100
150
200
Tmb (°C)
VGS ≥ 10 V
P tot
P der = ----------------------- × 100%
P
°
tot ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
03nm68
103
ID
(A)
tp = 10 µs
limit RDSon = VDS/ ID
100 µs
102
1 ms
Capped at 75 A due to package
D.C.
10 ms
10
1
10-1
100 ms
1
10
VDS (V)
102
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
3 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3:
Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Figure 4
-
-
0.55 K/W
SOT263B (TO-220AB)
vertical in still air
-
-
60
K/W
SOT426 (D2-PAK)
minimum footprint; mounted on a PCB
-
-
50
K/W
Rth(j-mb)
thermal resistance from junction to
mounting base
Rth(j-a)
thermal resistance from junction to ambient
4.1 Transient thermal impedance
03ni64
1
Z th(j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
0.02
10-2
δ=
P
tp
T
single shot
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
4 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
5. Characteristics
Table 4:
Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
40
-
-
V
Tj = −55 °C
36
-
-
V
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
drain-source leakage current
Tj = 25 °C
2
3
4
V
Tj = 175 °C
1
-
-
V
Tj = −55 °C
-
-
4.4
V
Tj = 25 °C
-
0.02
1
µA
Tj = 175 °C
-
-
500
µA
-
2
100
nA
Tj = 25 °C
-
3.4
4.1
mΩ
Tj = 175 °C
-
-
7.8
mΩ
VDS = 40 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 50 A;
Figure 7 and 8
VF
temperature sense diode
forward voltage
IF = 1 mA
1.58
1.60
1.63
V
SF
temperature sense diode
temperature coefficient
IF = 1 mA;
−55 °C < Tj < 175 °C
−2.55
−2.83
−3.11
mV/K
VGS = 10 V; VDD = 32 V;
ID = 25 A; Figure 14
-
83
-
nC
-
18
-
nC
-
29
-
nC
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
-
5106
6808
pF
-
1389
1667
pF
-
527
721
pF
-
38
-
ns
-
82
-
ns
Dynamic characteristics
Qg(tot)
total gate charge
Qgs
gate-to-source charge
Qgd
gate-to-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
141
-
ns
tf
fall time
-
90
-
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to center of die
-
4.5
-
nH
from contact screw on
mounting base to center of
die SOT263B
-
3.5
-
nH
from upper edge of drain
mounting base to center of
die SOT426
-
2.5
-
nH
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
5 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
Table 4:
Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ls
internal source inductance
from source lead to source
bond pad; lead length 6 mm
-
7.5
-
nH
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS = 0 V;
Figure 16
-
0.85
1.2
V
trr
reverse recovery time
-
70
-
ns
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
-
55
-
nC
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
6 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
03nq15
300
20
ID
(A)
03nq17
12
Label is VGS (V)
RDSon
10
(mΩ)
7
6.5
200
8
6
100
4
5.5
5
4.5
0
0
0
2
4
6
8
10
VDS (V)
Tj = 25 °C; tp = 300 µs
4
12
16
VGS (V)
20
Tj = 25 °C; ID = 50 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03nq16
20
RDSon
8
6
Lable is VGS (V)
03aa27
2
a
(mW)
6.5
15
1.5
10
1
7
5
8
0.5
10
20
0
0
100
200
ID (A)
300
Tj = 25 °C
0
-60
60
120
Tj (°C)
180
R DSon
a = ---------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
0
Rev. 01 — 4 November 2004
7 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
03aa32
5
VGS(th)
(V)
03aa35
10-1
ID
(A)
4
max
10-2
3
typ
10-3
2
min
10-4
min
typ
max
10-5
1
0
-60
10-6
0
60
120
0
180
Tj (°C)
2
4
6
VGS (V)
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
03nq18
120
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03nh35
8000
C
(pF)
gfs
(S)
Ciss
6000
80
Coss
4000
40
2000
Crss
0
0
0
25
50
75
ID (A)
100
Tj = 25 °C; VDS = 25 V
10-1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
1
Rev. 01 — 4 November 2004
8 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
03nq19
100
03nq21
10
VGS
ID
(A)
(V)
8
75
VDD = 14 V
6
Tj = 175 °C
50
VDD = 32 V
4
Tj = 25 °C
25
2
0
0
0
2
4
6
VGS (V)
0
25
50
75 Q (nC) 100
g
Tj = 25 °C; ID = 25 A
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03nq79
1.8
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
03nq20
100
IS
(A)
VF
(V)
75
1.6
Tj = 175 °C
1.4
50
1.2
25
Tj = 25 °C
0
1.0
0
50
100
150
Tj (°C)
200
IF = 1 mA
0.0
0.6
0.9 V
1.2
SD (V)
VGS = 0 V
Fig 15. Forward voltage of temperature sense diode as
a function of junction temperature; typical
values.
Fig 16. Reverse diode current as a function of reverse
diode voltage; typical values.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
0.3
Rev. 01 — 4 November 2004
9 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
6. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220
SOT263B
E
p1
A
∅p
A1
q
D1
mounting
base
D
L1
Q
L2
m
L
1
5
e
b
c
w M
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
D1
E
e
L
mm
4.5
4.1
1.39
1.27
0.85
0.70
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
1.7
15.0
13.5
(1)
L1
2.4
1.6
L2
(2)
0.5
m
∅p
p1
q
Q
w
0.8
0.6
3.8
3.6
4.3
4.1
3.0
2.7
2.6
2.2
0.4
Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.
OUTLINE
VERSION
REFERENCES
IEC
SOT263B
JEDEC
EIAJ
5-lead TO-220
EUROPEAN
PROJECTION
ISSUE DATE
01-01-11
Fig 17. SOT263B (TO-220AB).
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
10 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
Plastic single-ended surface mounted package (D2-PAK); 5 leads (one lead cropped)
SOT426
A
A1
E
D1
mounting
base
D
HD
3
1
2
4
e
e
Lp
5
b
e
c
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
1.70
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
04-10-13
SOT426
Fig 18. SOT426 (D2-PAK)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
11 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
7. Soldering
10.85
10.60
10.50
1.50
7.50
7.40
1.70
2.25 2.15
8.15
8.275
8.35
1.50
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
solder lands
1.70
(2×)
solder resist
3.40
0.90
1.00
8.15
MSD058
occupied area
solder paste
Dimensions in mm.
Fig 19. Reflow soldering footprint for SOT426.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
12 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
8. Revision history
Table 5:
Revision history
Rev Date
01
20041104
CPCN
Description
-
Product data; initial version.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Product data
Rev. 01 — 4 November 2004
13 of 15
BUK71/794R1-40BT
Philips Semiconductors
TrenchMOS™ standard level FET
9. Data sheet status
Level
Data sheet status[1]
Product status[2][3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected].
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9397 750 13954
Rev. 01 — 4 November 2004
14 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
Contents
1
1.1
1.2
1.3
1.4
2
3
4
4.1
5
6
7
8
9
10
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
© Koninklijke Philips Electronics N.V. 2004.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 4 November 2004
Document order number: 9397 750 13954
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