UMS CHR2292 17-20ghz integrated down converter Datasheet

CHR2292
RoHS COMPLIANT
17-20GHz Integrated Down Converter
GaAs Monolithic Microwave IC
Description
LO
The CHR2292 is a multifunction chip which
integrates a LO time two multiplier, a balanced
cold FET mixer, and a RF LNA. It is designed for
a wide range of applications, typically commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Q
GM
GB
VDM
VDL
GX
VGA
I
RF
Main Features
•
•
•
•
•
•
•
Broadband performances : 17-20GHz
13dB conversion gain
4.0dB noise figure
10dBm LO input power
-10dBm RF input power (1dB gain comp.)
Low DC power consumption, [email protected]
Chip size : 2.49 X 2.13 X 0.10 mm
Conversion Gain & Image suppression (dB)
20
16
12
8
4
0
-4
-8
-12
-16
Gc_channel_inf_rf-
Gc_channel_sup_rf-
Gc_channel_inf_rf+
Gc_channel_sup_rf+
-20
12
14
16
18
20
22
2*LO Frequency (GHz)
Conversion Gain for F_IF=1GHz (on wafer meas.)
P_LO=+10dBm / P_RF= -20dBm
Main Characteristics
Tamb. = 25°C
Parameter
Min
Typ
Max
Unit
FRF
RF frequency range
17
20
GHz
FLO
LO frequency range
7.5
10
GHz
FIF
IF frequency range
0.25
1.5
GHz
Gc
Conversion gain
13
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. DSCHR22924232 - 19 Aug 04
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
24
17-20GHz Mfc Down Converter
CHR2292
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V
Symbol
Parameter
Min
Typ
Max
Unit
FRF
RF frequency range
17
20
GHz
FLO
LO frequency range
7.5
10
GHz
FIF
IF frequency range
0.25
1.5
GHz
PLO
LO Input power
Gc
NF
Img Sup
P1dB
+10
dBm
Conversion gain (1)
13
dB
Noise Figure (1)
4.0
dB
Image Suppression (1)
15
dBc
RF Input power at 1dB gain compression (1)
-10
dBm
LO VSWR Input LO VSWR (1)
1.5:1
RF VSWR Input RF VSWR (1)
2.5:1
Id
Bias current (2)
110
mA
(1) On Wafer measurements without bonding wires at the RF ports.
(2) Current source biasing network is recommended. Optimum performances for Idm=50mA and
Idl=60mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range
-40 to +85
°C
-55 to +155
°C
Tstg
Storage temperature range
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-20GHz Mfc Down Converter
CHR2292
Typical On-wafer Measurements
Bias Conditions :Vdm= Vdl= 3.5 V, Vgm= -0.9V, Vgb= 0.4V, Vgx= -0.7V, Vga= -0.35V
Conversion Gain & Image suppression (dB)
20
16
12
8
4
0
-4
-8
-12
-16
Gc_channel_inf_rf-
Gc_channel_sup_rf-
Gc_channel_inf_rf+
Gc_channel_sup_rf+
-20
12
14
16
18
20
22
24
2*LO Frequency (GHz)
Conversion Gain & Image Suppresion @ IF=1GHz
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
17
17.5
18
18.5
19
19.5
20
RF Frequency (GHz)
Noise figure (dB) by channel
Ref. DSCHR22924232 - 19 Aug 04
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-20GHz Mfc Down Converter
CHR2292
10
8
6
4
2
0
-2
-4
-6
Freq_RF= 18.3GHz
Freq_OL= 9.65GHz
-8
-10
-12
IF power_I (dBm)
Conv_gain I (dB)
IF power_Q (dBm)
Conv_gain Q (dB)
-14
-20
-18
-16
-14
-12
-10
-8
-6
-4
Input RF power (dBm)
Input RF compression by channel
Ref. DSCHR22924232 - 19 Aug 04
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
17-20GHz Mfc Down Converter
CHR2292
Chip Assembly and Mechanical Data
LO
IN
Q
OUT
To Vgm DC Gate Supply
To Vgb DC Gate Supply
To Vdm,Vdl DC Drain Supply
I
OUT
To Vgx DC Gate Supply
To Vga DC Gate Supply
RF
IN
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended
Bonding pad positions
( Chip thickness : 100µm. All dimensions are in micrometers )
Ref. DSCHR22924232 - 19 Aug 04
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
CHR2292
Ordering Information
Chip form
:
CHR2292-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. DSCHR22924232 - 19 Aug 04
6/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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