SanRex AK55GB40 Thyristor module Datasheet

THYRISTOR MODULE
AK55GB40/80
UL;E76102
(M)
Power ThyristorModule AK55GB series are designed for various rectifier circuits and
power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available, and electrically isolated mounting base make
your mechanical design easy.
93.5max
80
2-φ6.5
2
1
K2
G2
3
K1
G1
13
26max
(Applications)
AC/DC motor drives
Heater controls
Light dimmers
Static switches
16.5
23
23
3-M5
Internal Configurations
G2
K2
21
110TAB
30max
Isolated mounting base
● IT(AV)55A, IT(RMS)122A, ITSM 1100A
● di/dt 150 A/μs
● dv/dt 500V/μs
A2・K1
3
1
A1K2
K1 G1
2
Unit:A
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Symbol
Item
VDRM
Repetitive Peak Off-State Voltage
Symbol
IT(AV)
Ratings
AK55GB40
400
Item
Conditions
Average On-State Current
Single phase, half wave, 180°conduction, Tc:89℃
IT(RMS)
R.M.S. On-State Current
Tc:89℃
ITSM
Surge On-State Current
1/cycle,
2
It
Value for one cycle of surge current
It
2
2
Unit
AK55GB80
800
50Hz/60Hz, peak value, non-reqetitive
V
Ratings
Unit
55
A
122
A
1000/1100
5000
A
A2S
PGM
Peak Gate Power Dissipation
10
W
PG(AV)
Average Gate Power Dissipation
3
W
IFGM
Peak Gate Current
3
A
VFGM
Peak Gate Voltage(Forward)
10
V
VRGM
Peak Gate Voltage(Reverse)
5
V
di/dt
VISO
Critical Rate of Rise of On-State Current
IG=100mA,Tj=25℃,VD=1/2VDRM,dIG/dt=0.1A/μs
Isolation Breakdown Voltage(R.M.S.)
A.C. 1 minute
2500
V
Tj
Operating Junction Temperature
−40 to +125
℃
Storage Temperature
Tstg
Mounting
Torque
150
A/μs
−40 to +125
℃
Mounting(M6) Recommended Value 2.5-3.9(25-40)
4.7(48)
Terminal(M5)
2.7(28)
N・m
(㎏f・B)
170
g
Ratings
Unit
Mass
Recommended Value 1.5-2.5(15-25)
Typical Value
■Electrical Characteristics
Symbol
Item
Conditions
IDRM
Repetitive Peak Off-State Current, max.
at VDRM, Single phase, half wave, Tj=125℃
VTM
Peak On-State Voltage, max.
On-State Current 165A, Tj=125℃Inst. measurement
IGT/VGT
VGD
Gate Trigger Current/Voltage, max.
Non-trigger Gate, Voltage, min
Tj=25℃,IT=1A,VD=6V
Turn On Time, max.
IT=55A,IG=100mA,Tj=25℃,VD=1/2VDRM,dIG/dt=0.1A/μs
Critical Rate of Rise of Off-State Voltage, min.
Tj=125℃,VD=2/3VDRM,Exponential
Holding Current, typ
Tj=25℃
Lutching Current, typ
tgt
dv/dt
IH
IL
Rth(j-c) Thermal Impedance, max.
Tj=125℃,VD=1/2VDRM
20
mA
1.35
V
100/3
0.25
mA/V
V
10
μs
500
V/μs
50
mA
Tj=25℃
100
mA
Junction to case, per 1/2 Module
0.50
Junction to case, per 1 Module
0.25
wave.
℃/W
*mark:Thyristor and Diode part. No mark:Thyristor part
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
AK55GB40/80
Gate Characteristics
2
0
10
P
Po eak
we Ga
(
t
r
10 e
W
Ga
)
te
Po
we
(
r
3W
)
5
25℃
125℃
On-State Current(A)
Av
er
ag
e
5
2
Tj=125℃
102
5
2
101
Maximum Gate Voltage that will not trigger any unit(0.25V)
2
5
ー1
10
101
2
5
102
2
103
5
2
0.
5
1.
0
3.
0
Average On-State Current Vs Maximum Allowable
Case Temperature(Single phase half wave)
140
D.C.
Per one element
2
120
。
360
100
θ=120゜θ=180゜
θ=90゜
θ=60゜
60
θ=30゜
2
40
。
360
20
: Conduction Angle
0
0
10
20
30
40
50
60
70
80
: Conduction Angle
80
60
θ=30゜
40
θ=180゜
D.C.
θ=120゜
20
0
90 100
10
20
30
40
50
60
70
80
90 100
Average On-State Current(A)
Transient Thermal Impedance θj-c(℃/W)
Surge On-State Current Rating
(Non-Repetitive)
Transient Thermal Impedance
0.
6
Per one element
Tj=25℃ start
1000
θ=90゜
θ=60゜
Average On-State Current(A)
100 2
5 101
Junction to Case
0.
5
Per one element
0.
4
800
60Hz
600
0.
3
50Hz
0.
2
400
0.
1
200
0
1
2
5
10
20
50
100
0
10ー3 2
5 10ー2 2
Total Power Dissipation(W)
Output Current
W1;Bidirectional connection
ld(Ar.m.s)
Id(RMS)
Conduction Angle 180°
W3
400
Rth:0.8C/W
Rth:0.4C/W
Rth:0.3C/W
Rth:0.2C/W
Rth:0.1C/W
300
200
W1
100
0
0
50
100
150
Output Current(A)
90
100
110
120
125
0 25 50 75 100125
Ambient Temperature(℃)
Allowable Case Temperature(℃)
Time(cycles)
W3;Three phase
bidiretional connection
90
5 10ー1 2
Time t(sec)
5 100
RMS On-State Current Vs
Allowable Case Temperature
Rth:0.8C/W
Rth:0.6C/W
Rth:0.4C/W
Rth:0.2C/W
Rth:0.1C/W
130
120
110
θ=30゜
θ=60゜
100
θ=90゜
θ=120゜
90
θ=180゜
100
80
110
70
120
125
60
Id(Ar.m.s.)
0 25 50 75 100125
Ambient Temperature(℃)
50
0 20 40 60 80 100120140
RMS On-State Current(A)
Allowable Case Temperature(℃)
Surge On-State Current(A)
2.
5
Average On-State Current Vs Power Dissipation
(Single phase half wave)
80
500
2.
0
On-State Voltage(V)
100
1200
1.
5
Gate Current(mA)
Per one element
Power Dissipation(W)
2
5
Allowable Case Temperature(℃)
120
On-State Voltage max
Peak Forward Gate Voltag(10V)
101
Gate Voltage(V)
5
Peak Gate Current(3A)
2
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