TOSHIBA TPC6603

TPC6603
TOSHIBA Transistor Silicon PNP Epitaxial Type
TPC6603
Switching Applications
DC/DC Converter Applications
Strobe Flash Applications
•
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
•
Low collector-emitter saturation: VCE (sat) = −0.19 V (max)
•
High-speed switching: tf = 40 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
−30
V
Collector-emitter voltage
VCEO
−20
V
Emitter-base voltage
VEBO
−7
V
DC
IC
−3.0
Pulse
ICP
−5.0
IB
−0.3
Collector current
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
PC (Note 1)
0.8
1.6
1. Collector
2. Collector
3. Base
A
mA
W
Tj
150
°C
Tstg
−55 to 150
°C
4. Emitter
5. Collector
6. Collector
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.01 g (typ.)
Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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TPC6603
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = −30 V, IE = 0
⎯
⎯
−100
nA
Emitter cutoff current
IEBO
VEB = −7 V, IC = 0
⎯
⎯
−100
nA
V (BR) CEO
IC = −10 mA, IB = 0
−20
⎯
⎯
V
hFE (1)
VCE = −2 V, IC = −0.5 A
200
⎯
500
hFE (2)
VCE = −2 V, IC = −1.6 A
100
⎯
⎯
Collector-emitter saturation voltage
VCE (sat)
IC = −1.6 A, IB = −53 mA
⎯
⎯
−0.19
V
Base-emitter saturation voltage
VBE (sat)
IC = −1.6 A, IB = −53 mA
⎯
⎯
−1.10
V
VCB = −10 V, IE = 0, f = 1 MHz
⎯
28
⎯
pF
⎯
70
⎯
⎯
150
⎯
⎯
40
⎯
Collector-emitter breakdown voltage
DC current gain
Collector output capacitance
Cob
Rise time
Switching time
tr
Storage time
See Figure 1 circuit diagram
VCC ∼
− −12 V, RL = 7.5 Ω
IB1 = −IB2 = −53.3 mA
tstg
Fall time
tf
ns
VCC
IB2
Input
IB1
RL
20 μs
Output
IB1
IB2
Duty cycle < 1%
Figure 1. Switching Time Test Circuit
Circuit configuration
(Top View)
Marking
Lot code (month)
6
5
Part No.
(or abbreviation code)
Pin #1
1
2
Lot No.
4
3
2
H3E
Product-specific code
Lot code
(year)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2006-11-13
TPC6603
IC – VCE
hFE – IC
−6
10000
−80
VCE = −2 V
−60
−4
hFE
Single nonrepetitive pulse
−40
−3
DC current gain
Collector current
IC
(A)
Common emitter
−100
−5
−20
−2
−10
IB = −5 mA
−1
Common emitter
Ta = 25°C
Single nonrepetitive pulse
0
0
−0.4
−0.8
−1.2
−1.6
Collector−emitter voltage
−2.0
1000
Ta = 100°C
25
−55
100
10
−2.4
1
−0.001
VCE (V)
−0.01
−0.1
−1
Collector current
VCE (sat) – IC
(A)
VBE (sat) – IC
−10
−100
Common emitter
Common emitter
IC/IB = 30
IC/IB = 30
Base−emitter saturation voltage
VBE (sat) (V)
Collector−emitter saturation voltage
VCE (sat) (V)
IC
−10
Single nonrepetitive pulse
−1
−0.1
Ta = 100°C
−0.01
25
−0.001
−0.001
−0.01
−55
−0.1
−1
Collector current
IC
Single nonrepetitive pulse
−10
Ta = 100°C
25
−0.1
−0.01
−0.001
−10
(A)
−55
−1
−0.01
−0.1
Collector current
−1
IC
−10
(A)
IC – VBE
−5
−4
VCE = −2 V
Single nonrepetitive pulse
Collector current
IC
(A)
Common emitter
−3
−2
Ta = 100°C
25
−55
−1
0
0
−0.4
−0.8
Base−emitter voltage
−1.2
VBE
−1.6
(V)
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TPC6603
rth – tw
Transient thermal resistance
rth (j-a) (°C/W)
1000
100
10
Curves apply only to limited areas of thermal resistance.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645
mm2)
1
0.001
0.01
0.1
1
Pulse width
10
100
1000
tw (s)
Safe operating area
−10
IC max (pulse) *
10 ms* 1 ms* 100 μs*
10 μs*
−1
10 s*
100 ms*
DC operation
(Ta = 25°C)
*: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
−0.1
10 s and DC operation will be
different when the devices are not
mounted on an FR4 board
(glass-epoxy; 1.6 mm thick; Cu
2
area, 645 mm ).
These characteristic curves must
be derated linearly with increase
in temperature.
−0.01
−0.1
−1
VCEO max
Collector current
IC
(A)
IC max (continuous)
−10
Collector−emitter voltage
−100
VCE (V)
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2006-11-13
TPC6603
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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