RoHS BA282/BA283 D T ,. L Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications IC Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings R T Tj=25℃ Parameter Reverse voltage O N Test Conditions C E L Forward current Junction temperature Storage temperature range E C O Symbol Value Unit VR 35 V IF 100 mA Tj 150 ℃ Tstg -55…+150 ℃ Maximum Thermal Resistance Tj=25℃ J E Parameter Junction ambient Test Conditions I=4mm, TL=constant Symbol Value Unit RthJA 350 K/W W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS BA282/BA283 D T ,. L Electrical Characteristics Tj=25℃ Parameter Test Conditions Type Symbol Min Typ Max Forward voltage IF=100mA VF 1 Reverse current VR=20V IR 50 Diode capacitance f=100MHZ, VR=1V CD 1.5 f=100MHZ, VR=3V Differential forward f=200MHZ, IF=3mA resistance f=200MHZ,IF=10mA Reverse impedance BA282 CD BA283 CD BA282 rf BA283 rf BA282 rf BA283 rf f=100MHZ,VR=1V zr Dimensions in mm R T O O 1.25 N IC 100 C Unit 1.2 0.7 V nA pF pF pF 1.2 0.5 0.9 K Cathode identification C E L Cathode φ2.0 max. E 26 min. J E 4.2 max. φ0.55 max. Anode 26 min. Standard Glass Case JEDEC DO 35 W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]