TA2131FNG TOSHIBA Bipolar Linear IC Silicon Monolithic TA2131FNG Low Current Consumption Headphone Amplifier for Portable MD Player (With Bass Boost Function) The TA2131FNG is a low current consumption headphone amplifier developed for portable digital audio. It is particularly well suited to portable MD players that are driven by a single dry cell. It also features a built-in bass boost function with AGC, and is capable of bass amplification of DAC output and analog signals such as tuner. Features • Low current consumption: ICCQ (VCC1) = 0.55 mA (typ.) ICCQ (VCC2) = 0.20 mA (typ.) • Output power: Po = 8 mW (typ.) • Low noise: Vno = −102dBV (typ.) • Built-in low-pass boost (with AGC) • I/O pin for beep sound • Outstanding ripple rejection ratio • Built-in power mute • Built-in power ON/OFF switch • Operating supply voltage range (Ta = 25°C): VCC1 = 1.8~4.5 V Weight: 0.14 g (typ.) (VCC1 = 2.8 V, VCC2 = 1.2 V, f = 1 kHz, THD = 10%, RL = 16 Ω) VCC2 = 0.9~4.5 V 1 2006-04-19 TA2131FNG Block Diagram Vref VCC1 BEEP Vref OFF Vref LPF1 24 23 22 BST BEEP Vref GND IN IN SW 21 20 19 18 MT SW PW SW 17 MT TC 16 BEEP BOOST MUTE SW SW Vref (2.8 V) OFF ON OFF ON ON BST NF1 DAC OUT VCC1 VCC1 15 14 INB 13 Vref PW SW BST1 BST2 LPF2 1 BST NF2 2 BST OUT PW B BST AGC 3 AGC IN 4 DET 5 OUTB 6 PWR GND RL Vref 7 PW A OUTA 8 VCC2 9 BEEP OUTA 10 BEEP OUTB 11 INA 12 Vref RL +B (1.2 V) Vref 2 DAC OUT 2006-04-19 TA2131FNG Terminal Explanation (Terminal voltage: Typical terminal voltage at no signal with test circuit, VCC1 = 2.8 V, VCC2 = 1.2 V, Ta = 25°C) 1 LPF2 Terminal Explanation BST amplifier 1 output (filter terminal) Terminal Voltage (V) Internal Circuit 12 AGC PWA BST1 ADD 20 kΩ 23 LPF1 ADD amplifier output (filter terminal) 13 0.61 PWB 30 kΩ 2 kΩ 23 0.61 BST2 AMP 12 kΩ 10 kΩ 20 kΩ 20 kΩ Terminal No. BST amplifier 2 NF terminal (low-pass compensation condenser connection terminal) 0.61 0.61 BST amplifier 2 output terminal 8 ADD 10 kΩ 10 kΩ BST1 OUT OUTB BST2 Power amplifier output OUTA 15 kΩ 3 0.61 15 kΩ INA 6 Power amplifier input 13 10 kΩ INB 13 20 kΩ 12 10 kΩ 20 kΩ 8 PWA 12 10 kΩ 6 BST OUT Vref 20 kΩ 3 Vref 10 kΩ 10 kΩ BST NF2 1 BST amplifier 1 NF 20 kΩ 2 BST NF1 20 kΩ 24 24 0.61 PWB 2 3 2006-04-19 TA2131FNG Terminal No. Terminal Explanation AGC IN Signal input level to BST amplifier is varied according to the input level to the boost AGC input terminal. Input impedance: 15 kΩ (typ.) Terminal Voltage (V) Internal Circuit 14 Vref 5 kΩ 4 0.61 4 10 kΩ 5.1 kΩ 14 5 DET Smoothing of boost AGC level detection 7 PWR GND GND of power amplifier output stage ⎯ 0 9 VCC2 VCC (+B) at power amplifier output stage ⎯ 1.2 10 BEEP OUTA Beep sound output terminal 11 14 BEEP OUTB 19 19 BEEP IN Beep sound input terminal Receives beep sound signals from microcomputer. 14 VCC1 Main VCC ⎯ 5 ⎯ 10 kΩ 10 11 0 ⎯ 2.8 14 MT TC 12 kΩ 15 Mute smoothing Power mute switch Reduces the shock noise during switching 1.2 15 4 2006-04-19 TA2131FNG Terminal No. Terminal Explanation Terminal Voltage (V) Internal Circuit VCC1 14 16 PW SW Power ON/OFF switch “H” level: IC operation “L” level: IC OFF Refer to function explanation 5 47 kΩ 16 ⎯ VCC1 14 17 MT SW Mute switch “L” level: mute reset “H” level: mute ON Refer to function explanation 5 ⎯ 47 kΩ 17 18 BST SW 14 Bass boost ON/OFF switch “H” level/OPEN: BST ON “L” level: BST OFF Refer to function explanation 5 20 GND GND of input stage in power amplifier 21 Vref IN Reference voltage circuit filter terminal Vref Reference voltage circuit 20 kΩ ⎯ ⎯ 0 18 14 10 kΩ 4 kΩ 0.61 22 21 10 kΩ 22 0.61 5 2006-04-19 TA2131FNG Function Explanation 1. Bass Boost Function 1-1 Description of Operation TA2131FNG has a bass boost function for bass sound reproduction built-in to the power amplifier. With the bass boost function, at medium levels and lower, channel A and channel B are added for the low frequency component, and output to BST amplifier 2 (BST2) in negative phase. That signal is inverted and added before being subjected to bass boost. If the signal of the low-frequency component reaches a high level, the boost gain is controlled to main a low distortion (see Fig.1). 20 kΩ V (OUT) INA 2 kΩ 20 kΩ 5 kΩ 10 kΩ PWB AGC IN BST NF1 6 10 9 V (NF1) Vref 1 µF Vref V (NF2) 4 220 µF 16 Ω RL BST OUT LPF2 V (LPF2) 16 Ω RL BST NF2 8 OUTB Vref Vref 10 kΩ 15 kΩ 7 0.1 µF 0.1 µF 10 kΩ 30 kΩ 22 kΩ DET 5 11 0.1 µF LPF1 10 kΩ BST AGC 4.7 µF 20 kΩ INB 21 V (LPF1) 10 kΩ 15 kΩ BST2 2 10 kΩ BST1 20 kΩ 10 µF PWA 12 kΩ Vref DAC OUT 10 kΩ 20 kΩ V (RL) 220 µF 10 kΩ ADD 10 kΩ 0.1 µF 10 µF OUTA 20 kΩ 22 V (BST OUT) Figure 1 System Diagram of Bass Boost 1-2 AGC Circuit The AGC circuit of the bass boost function detects with “AGC DET” the voltage component created by “BST2,” and as the input level increases, the variable impedance circuit is changed, and the bass boost signal is controlled so that it is not assigned to BST amplifier 1. In this way, the bass signal to “BST2” input is shut-off, and that boost gain is controlled. 1-3 Bass Boost System As shown in Fig.1, the flow of the bass boost signal is that the signal received from power amplifier input goes through LPF1, ADD amplifier, ATT (variable impedance circuit), BPF1 (BST amplifier 1) and LPF2, and the negative phase signal to the power amplifier input signal is output from BST amplifier 2. The reason why it becomes the negative phase of the BST amplifier 2 signal is that the phase is inverted by 180° in the audible bandwidth by the secondary characteristics of LPF1 and LPF2 in Fig.1. Ultimately the main signal and the bass boost signal formed before BST2 are added. Fig.2 shows the frequency characteristics to each terminal. 6 2006-04-19 TA2131FNG 40 V (OUT) (dB) 20 V (RL) V (NF2) V (BST OUT) 0 GV V (LPF2) V (NF1) −20 −40 −60 1 V (LPF1) 10 100 f 1k 10 k 100 k (Hz) Figure 2 During Bass Boost (Frequency Characteristics to Each Terminal) 2. Low-Pass Compensation 2-1. Function In C-couple type power amplifiers, it is necessary to give the output condenser C a large capacity to flatten out the frequency characteristics to the low frequency band (this is because the loss in the low frequency bandwidth becomes larger due to the effect of the high-pass filter comprising C and RL). Particularly when the headphone load is approximately 16 Ω and an attempt is being made to achieve frequency characteristics of ±3 dB at 20 Hz, a large capacity condenser of C = 470 µF is required. Bearing this situation in mind, a low-pass compensation function was built in to the TA2131FNG, and while reducing the capacity of the output coupling condenser, almost flat (±3 dB) frequency characteristics in all audible bandwidths (20 Hz to 20 kHz) have been achieved. Fig.3 shows the low-pass system diagram, and Fig.4 shows the frequency characteristics at each point. In Fig.4, (a) represents the status lost by the low-pass as a result of the high-pass filter comprising the headphone load (RL = 16 Ω) and the output coupling condenser (220 µF) in the C-coupling system. V (OUT) 20 kΩ 10 kΩ PWA ADD Vref BST2 20 kΩ DAC OUT 10 µF 10 kΩ 10 kΩ 15 kΩ 10 kΩ 15 kΩ 13 20 kΩ INB 220 µF 8 10 kΩ 10 µF V (RL) OUTA 10 kΩ PWB 16 Ω RL BST NF2 2 10 kΩ 20 kΩ INA 12 6 OUTB 1 µF Vref 220 µF 16 Ω RL 20 kΩ Figure 3 Low-Pass Compensation System Diagram 7 2006-04-19 TA2131FNG 20 (b) (c) 0 GV (dB) 10 (a) −10 −20 1 10 1k 100 f 10 k 100 k (Hz) Figure 4 Power Amplifier Frequency Characteristics <Principle of Low-Pass Compensation> The low-pass component alone is extracted from the composite signal of PWA/PWB output, and that frequency signal is fed back to PWA/PWB once more via the inversion amplifier, thereby making it possible to increase the gain only of the low-pass component. The frequency characteristics of the power amplifier output V (OUT) in this state are shown in Fig.4 (b). In practice they are the frequency characteristics (c) viewed from load terminal V (RL), and the low-pass is compensated relative to the state in (a). 2-2. Low-Pass Compensation Condenser and Crosstalk In this low-pass compensation condenser circuit, processing is carried out using the composite signal of power amplifier output, so this affects crosstalk, according to the amount of compensation. f characteristics and crosstalk generated by the capacity of the condenser for compensation (2-pin) are shown below. 10 VCC1 = 2.8 V VCC2 = 1.2 V Response (dB) Rg = 620 Ω RL = 16 Ω C = 0.47 µF Filter: LPF 80 kHz Output C = 220 µF 0 Vref short C = 1 µF C = 2.2 µF −10 10 30 100 300 f 1k 3k 10 k 30 k (Hz) Figure 5 Condenser and f Characteristics for Low-Pass Compensation 8 2006-04-19 TA2131FNG CT – f VCC1 = 2.8 V VCC2 = 1.2 V Rg = 620 Ω RL = 16 Ω Vo = −22dBV WIDE BAND Output C = 220 µF 0 CT (dB) C = 0.47 µF −20 C = 1 µF C = 2.2 µF −40 Vref short −60 10 30 100 300 1k 3k 10 k 30 k 100 k f (Hz) Figure 6 Low-Pass Compensation Condenser and Crosstalk 3. Beep Beep sound signals from microcomputer can be received by the beep input terminal (19-pin). The PWA and PWB of the power amplifier during power mute are turned OFF, and the beep signal input from BEEP-IN (19-pin) is output from the BEEP-OUT terminal (10/11-pin) as fixed current, after passing through the converter and current amplification stage. Connecting this terminal to the headphone load outputs the beep sound. If the beep sound is not input, fix the BEEP-IN (19-pin) terminal to GND level. VCC PW SW (18-pin) ON OFF OFF MT SW (17-pin) OFF ON OFF BEEP IN (15-pin) 200 ms 100 ms 100 ms 20 IBEEP 23 15 IBEEP 24 ID 9 2006-04-19 TA2131FNG 4. Power Switch As long as the power switch is not connected to “H” level, the IC does not operate. If it malfunctions due to external noise, however, it is recommended to connect a pull-down resistor externally (the power switch is set to be highly sensitive). 5. Threshold Voltages of Switches (1) PW SW (2) (V) 4.5 V V17, V18 H 3 Terminal voltage Terminal voltage V16 (V) 4.5 V 4 2 1.6 V 1 4 3 H 2 1 0.8 V 0.6 V L 0 MT SW, BST SW 5 5 1 2 0.3 V 3 Power supply voltage 4 5 VCC (V) 0 1 L 2 3 Power supply voltage PW SW (V16) 4 5 VCC (V) MT SW (V17) “H” level IC operation “H” level Mute ON “L” level IC OFF “L” level Mute reset BST SW (V18) 6. “H” level/OPEN BST ON “L” level BST OFF These capacitors which prevent oscillation of the power amplifier, and are between the Vref and VCC-GND must have a small temperature coefficient and outstanding frequency characteristics. 10 2006-04-19 TA2131FNG Absolute Maximum Ratings Characteristic Symbol Rating Unit Supply voltage VCC 4.5 V Output current Io (peak) 100 mA Power dissipation PD (Note) 500 mW Operating temperature Topr −25~75 °C Storage temperature Tstg −55~150 °C Note: Derated above Ta = 25°C in the proportion of 4 mW/°C. Electrical Characteristics (Unless specified otherwise, VCC1 = 2.8 V, VCC2 = 1.2 V, Rg = 600 Ω, RL = 16 Ω, f = 1 kHz, Ta = 25°C) Characteristic Quiescent supply current Power supply current during drive Test condition Min Typ. Max Unit ICC1 IC OFF (VCC1), SW1: b, SW2: b ⎯ 0.1 5 ICC2 IC OFF (VCC2), SW1: b, SW2: b ⎯ 0.1 5 ICC3 MUTE ON (VCC1), SW1: a, SW2: b ⎯ 0.35 0.50 mA ICC4 MUTE ON (VCC2), SW1: a, SW2: b ⎯ 5 10 µA ICC5 No signal (VCC1), SW1: a, SW2: a ⎯ 0.55 0.75 ICC6 No signal (VCC2), SW1: a, SW2: a ⎯ 0.20 0.40 ICC7 Po = 0.5 mW + 0.5 mW output (VCC1) ⎯ 0.6 ⎯ ICC8 Po = 0.5 mW + 0.5 mW output (VCC2) ⎯ 5.3 ⎯ Gain GV Vo = −22dBV 10 12 14 Channel balance CB Vo = −22dBV −1.5 0 1.5 µA mA dB Pomax THD = 10% 5 8 ⎯ mW Total harmonic distortion THD Po = 1 mW ⎯ 0.1 0.3 % Output noise voltage Vno Rg = 600 Ω, Filter: IHF-A, SW4: b ⎯ −102 −96 dBV Crosstalk CT Vo = −22dBV −42 −48 ⎯ RR1 fr = 100 Hz, Vr = −20dBV inflow to VCC2 −71 −77 ⎯ RR2 fr = 100 Hz, Vr = −20dBV inflow to VCC1 −54 −64 ⎯ ATT Vo = −12dBV, SW2: a → b −90 −100 ⎯ VBEEP V Beep IN = 2 Vp-o, SW2: b −53 −48 −43 Output power Power Section Symbol Ripple rejection ratio Mute attenuation Beep sound output voltage Boost gain dB BST1 Vo = −20dBV, f = 100 Hz, SW3: ON → OPEN 1 4 7 BST2 Vo = −30dBV, f = 100 Hz, SW3: ON → OPEN 10 13 16 BST3 Vo = −50dBV, f = 100 Hz, SW3: ON → OPEN 13.5 16.5 19.5 11 dBV dB 2006-04-19 TA2131FNG Test Circuit Vref 4.7 µF 4.7 µF 0.1 µF 10 µF (a) SW2 OFF SW3 (b) VCC1 (2.8 V) (b) (a) SW4B (a) SW1 ON 24 23 22 21 20 BST NF1 LPF1 Vref Vref IN GND 19 BEEP IN 18 BST SW 17 16 15 (b) 10 µF VCC1 Vref 1 µF Vref 600 Ω Rg = 600 Ω 14 13 MT SW PW SW MT TC VCC1 INB TA2131FNG AGC IN DET OUTB PWR GND OUTA VCC2 BEEP OUTA BEEP OUTB INA 1 2 3 4 5 6 7 8 9 10 11 12 Vref SW4A (a) (b) 600 Ω 16 Ω (*) 16 Ω (*) 220 µF 0.1 µF 22 kΩ 0.1 µF 10 µF BST OUT 220 µF BST NF2 0.1 µF LPF2 +B (1.2 V) Vref Vref (*) 0.22 µF + 10 Ω Monolithic ceramic capacitor 12 2006-04-19 TA2131FNG Application Circuit 1 100 kΩ 4.7 µF 10 µF 0.1 µF OFF DAC OUT VCC1 (2.8 V) 10 µF VCC1 BEEP ON OFF ON 1 µF Vref 4.7 µF Vref 0.1 µF Vref 24 23 22 21 20 BST NF1 LPF1 Vref Vref IN GND 19 18 BEEP IN BST SW 14 13 MT SW PW SW MT TC 17 16 15 VCC1 INB TA2131FNG LPF2 BST NF2 BST OUT AGC IN DET OUTB PWR GND OUTA VCC2 BEEP OUTA BEEP OUTB INA 1 2 3 4 5 6 7 8 9 10 11 12 RL Vref 10 µF (*) 220 µF (*) 220 µF 0.1 µF 0.1 µF 1 µF 0.1 µF Vref 22 kΩ RL +B (1.2 V) Vref DAC OUT (*) 0.22 µF + 10 Ω Monolithic ceramic capacitor 13 2006-04-19 TA2131FNG Application Circuit 2 (Low-Pass Compensation/Bass Boost Function/Beep Not Used) (2.8 V) ON OFF 1 µF ON 4.7 µF 10 µF OFF DAC OUT VCC1 10 µF VCC1 Vref Vref 24 23 22 21 20 BST NF1 LPF1 Vref Vref IN GND 19 18 BEEP IN BST SW 14 13 MT SW PW SW MT TC 17 16 15 VCC1 INB TA2131FNG LPF2 BST NF2 BST OUT AGC IN DET OUTB PWR GND OUTA VCC2 BEEP OUTA BEEP OUTB INA 1 2 3 4 5 6 7 8 9 10 11 12 RL Vref Vref 10 µF (*) 220 µF (*) 220 µF Vref RL +B (1.2 V) Vref DAC OUT (*) 0.22 µF + 10 Ω Monolithic ceramic capacitor 14 2006-04-19 TA2131FNG Characteristics (Unless otherwise specified VCC1 = 2.8 V, VCC2 = 1.2 V, Rg = 600 Ω, f = 1 kHz, Ta = 25°C) VDC – VCC2 1.0 0.8 0.8 ICC5 0.4 ICC6 0.2 0 0.6 0.8 1.0 1.2 1.4 1.6 Supply voltage 1.8 VCC2 2.0 2.2 0.4 0 0.6 2.4 0.8 (V) 1.0 1.2 1.4 Supply voltage 1.6 1.8 VCC2 (V) 2.0 2.2 Po – VCC2 MUTE ON 100 0.8 30 (mW) 1.0 ICC (mA) 0.6 0.2 ICC – VCC2 Po 10 0.6 0.4 Output volatage Quiescent supply current (Vref, OUT) (V) 0.6 Output voltage Quiescent supply current ICC (mA) ICC – VCC2 1.0 ICC3 0.2 3 1 0.3 THD = 10 % ICC4 0 0.6 0.8 1.0 1.2 1.4 1.6 Supply voltage A/Bch IN 1.8 VCC2 2.0 2.2 0.1 0.6 2.4 0.8 (V) 1.0 1.2 1.4 Supply voltage ICC – Po 1.6 1.8 VCC2 2.0 2.2 2.4 (V) Vno – VCC2 100 IHF-A (dBV) 10 Vno 30 ICC8 Output noise voltage ICC A/Bch IN Consumption supply current (mA) −80 3 1 ICC7 0.3 0.1 0.01 0.03 0.1 0.3 Output voltage 1 Po 3 10 −85 −90 −95 −100 −105 −110 −115 −120 0.6 30 (mW) 0.8 1.0 1.2 1.4 Supply voltage 15 1.6 1.8 VCC2 2.0 2.2 2.4 (V) 2006-04-19 TA2131FNG THD – Po R.R. – VCC2 10 inflow to VCC1 0 R.R. (dB) 1 0.3 Ripple rejection ratio Total harmonic distortion THD (%) fr = 100 Hz 3 10 kHz 0.1 100 Hz/1 kHz 0.03 0.01 0.1 0.3 1 3 10 Output voltage 30 Po 100 300 Vr = −20dBV 20 40 60 80 100 0.4 0.8 (mW) 1.2 Supply voltage THD – VCC2 0.3 (dB) 10 kHz 1 kHz 0.8 100 Hz 1.0 1.2 1.4 1.6 Supply voltage Vr = −20dBV 1.8 VCC2 2.0 2.2 −40 −60 −80 −100 0.4 2.4 (V) 0.8 1.2 VCC2 −40 (dBV) −10 −20 −30 −40 −50 −60 100 300 Frequency 1k f 2.4 (V) −50 −60 −70 −80 −90 fBEEP = 400 Hz Rectangle wave −100 30 2.0 BEEP −30 Beep output voltage (dBV) Vo 1.6 Supply voltage Vo – f Output voltage inflow to VCC2 −20 0 −70 10 (V) R.R. 1 0.03 0.6 2.4 fr = 100 Hz 3 0.1 VCC2 R.R. – VCC Po = 1 mW A/Bch IN 10 2.0 0 RL = 16 Ω Ripple rejection ratio Total harmonic distortion THD (%) 30 1.6 3k 10 k −110 0.1 30 k (Hz) 0.3 0.5 Beep input voltage 16 1 3 VBEEP 5 10 (Vp-o) (V) 2006-04-19 TA2131FNG CT – f ICC – Ta 0 1.0 (mA) Vo = −22 dBV Application circuit 1 30 40 (No use Low-Pass Compensation) 50 Application circuit 2 60 70 10 0.8 ICC 20 Quiescent supply current Cross talk CT (dB) 10 30 100 300 1k Frequency f 3k 10 k 0.4 ICC6 0.2 0 −50 30 k (Hz) ICC5 0.6 −25 0 25 Ambient temperature 50 Ta 75 100 (°C) VDC – Ta Output voltage VDC (V) 1.0 0.8 0.6 0.4 0.2 0 −50 −25 0 25 Ambient temperature 50 Ta 75 100 (°C) 17 2006-04-19 TA2131FNG Package Dimensions Weight: 0.14 g (typ.) 18 2006-04-19 TA2131FNG RESTRICTIONS ON PRODUCT USE 060116EBA • The information contained herein is subject to change without notice. 021023_D • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. 021023_A • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 021023_B • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C • The products described in this document are subject to the foreign exchange and foreign trade laws. 021023_E About solderability, following conditions were confirmed • Solderability (1) Use of Sn-37Pb solder Bath · solder bath temperature = 230°C · dipping time = 5 seconds · the number of times = once · use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath · solder bath temperature = 245°C · dipping time = 5 seconds · the number of times = once · use of R-type flux 19 2006-04-19