VISHAY UGF8HCT

UG8JCT, UGF8JCT, UGB8JCT Series
Vishay Semiconductors
New Product
formerly General Semiconductor
Dual Ultrafast Plastic Rectifier Series
Reverse Voltage 500 to 600V
Forward Current 8A
Reverse Recovery Time 25ns
ITO-220AB (UGF8JCT Series)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
0.185 (4.70)
0.415 (10.54) MAX.
0.175 (4.44)
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.148 (3.74)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.350 (8.89)
0.330 (8.38)
PIN
0.113 (2.87)
0.103 (2.62)
3
2
1
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
1
PIN
2
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
1.148 (29.16)
1.118 (28.40)
PIN 1
PIN 2
PIN 3
CASE
0.560 (14.22)
0.530 (13.46)
0.037 (0.94)
0.027 (0.69)
0.105 (2.67)
0.095 (2.41)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.035 (0.90)
0.028 (0.70)
PIN 2
PIN 3
0.110 (2.79)
0.100 (2.54)
0.104 (2.65)
0.096 (2.45)
0.110 (2.80)
0.100 (2.54)
0.060 (1.52)
PIN 1
3
0.160 (4.06)
0.140 (3.56)
0.095 (2.41)
0.131 (3.39)
DIA.
0.122 (3.08)
0.140 (3.56)
DIA.
0.130 (3.30)
TO-220AB (UG8JCT Series)
TO-263AB (UGB8JCT Series)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.411 (10.45)
0.190 (4.83)
0.380 (9.65)
0.160 (4.06)
0.045 (1.14)
0.245 (6.22)
MIN
Mounting Pad Layout TO-263AB
0.42
(10.66)
K
0.055 (1.40)
0.360 (9.14)
0.047 (1.19)
0.320 (8.13)
0.624 (15.85)
1
K
2
0.591(15.00)
0.33
(8.38)
0-0.01 (0-0.254)
0.021 (0.53)
0.014 (0.36)
0.63
(17.02)
0.022 (0.56)
0.015 (0.38)
0.037 (0.940)
Dimensions in inches
and (millimeters)
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Ideally suited for free wheeling diode power factor
correction applications
• Soft recovery characteristics
• Excellent high temperature switching
• Optimized to reduce switching losses
• High temperature soldering guaranteed: 250°C/10 seconds
at terminals
• Glass passivated chip junction
Document Number 88766
03-Jul-02
0.055 (1.40)
0.027 (0.686)
0.105 (2.67)
0.140 (3.56)
0.095 (2.41)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
PIN 1
PIN 2
K - HEATSINK
Mechanical Data
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
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UG8JCT, UGF8JCT, UGB8JCT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
(TC = 25°C unless otherwise noted)
Parameter
Symbol
UG8HCT
UG8JCT
Unit
Maximum repetitive peak reverse voltage
VRRM
500
600
V
Maximum working reverse voltage
VRWM
400
480
V
Maximum RMS voltage
VRMS
350
420
V
Maximum DC blocking voltage
VDC
500
Maximum average forward rectified current
IF(AV)
8.0
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) per leg at TC = 100°C
IFSM
65
A
TJ, TSTG
–55 to +150
Operating junction and storage temperature range
600
V
°C
(1)
RMS Isolation voltage (UGF types only)
from terminals to heatsink with t = 1.0 second, RH ≤ 30%
Electrical Characteristics (T
C
4500
3500(2)
1500(3)
VISOL
V
= 25°C unless otherwise noted)
Parameter
Symbol
UG8HCT
UG8JCT
Unit
IF = 4A, TJ = 25°C
IF = 4A, TJ = 125°C
VF
1.75
1.50
V
TJ = 25°C
Maximum DC reverse current per leg at VRWM TJ = 100°C
TJ = 125°C
IR
30
800
4.0
µA
µA
mA
Maximum reverse recovery time per leg at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
25
ns
Maximum reverse recovery time per leg at
IF = 1.0A, di/dt = 50A/µs, VR = 30V, Irr = 0.1 IRM
trr
50
ns
Typical softness factor (tb/ta)
IF = 4.0A, di/dt = 240A/µs, VR = 400V, Irr = 0.1 IRM
S
0.9
—
Maximum reverse recovery current per leg at
IF = 4.0A, di/dt = 32A/µs, VR = 400V, TC = 125°C
IRM
3.0
A
Maximum reverse recovery current per leg at
IF = 4.0A, di/dt = 240A/µs, VR = 400V, TC = 125°C
IRM
8
A
tfr
500
ns
Maximum instantaneous
forward voltage per leg (4)
Peak forward recovery time per leg at
IF = 4.0A, di/dt = 64A/µs, VF = 1.1VFmax
Thermal Characteristics (T
C
= 25°C unless otherwise noted)
Parameter
Typical thermal resistance from junction to case
Symbol
UG8
UGF8
UGB8
Unit
RθJC
3.5
6.0
3.5
°C/W
Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(2) Clip mounting (on case), where leads do overlap heatsink
(4) Pulse test: 300µs pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
UG8HCT - UG8JCT
TO-220AB
45
Anti-Static tube, 50/tube, 2K/carton
UGF8HCT - UGF8JCT
ITO-220AB
45
Anti-Static tube, 50/tube, 2K/carton
UGB8HCT - UGB8JCT
TO-263AB
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
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Package Option
Document Number 88766
03-Jul-02
UG8JCT, UGF8JCT, UGB8JCT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 -- Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Fig. 1 -- Maximum Forward Current
Derating Curve
100
Peak Forward Surge Current (A)
10
UG8JCT, UGB8JCT
8
6
UGF8JCT
4
2
P.C.B. with 7.5 x 7.5 x 0.3cm
Copper Pad
0
25
50
75
100
125
40
20
1
10
100
Case Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 -- Typical Instantaneous
Forward Characteristics Per Leg
Fig. 4 -- Typical Reverse Leakage
Characteristics Per Leg
10,000
10
1
0.1
0.01
0.5
TJ = 25°C max.
Pulse Width = 300µs
1% Duty Cycle
1.0
1.5
2.0
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)
60
150
100
1,000
100
10
1
0
2.5
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 -- Typical Junction Capacitance
Per Leg
Fig. 6 -- Reverse Switching
Characteristics Per Leg
100
Junction Capacitance (pF)
80
0
0
10
TJ = 25°C
f = 1.0MHZ
Vsig = 50mvp-p
1
1
10
Reverse Voltage (V)
Document Number 88766
03-Jul-02
100
Stored Charge/Reverse Recovery Time,
(nC/ns)
Average Forward Rectified Current (A)
12
140
120
100
Qrr
Trr
IF = 4A
Vr = 30V
di/dt =
80
60
40
20
0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
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