STMicroelectronics AM80912-005 Avionics applications rf & microwave transistor Datasheet

AM80912-005
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
..
..
..
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REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 6.0 W MIN. WITH 9.3 dB GAIN
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM80912-005
BRANDING
80912-5
PIN CONNECTION
DESCRIPTION
The AM80912-005 is designed for specialized
avionics applications, including JTIDS, where
power is provided under pulse formats utilizing
short pulse widths and high burst or overall duty
cycles.
The AM80912-005 i s housed in the unique
IMPAC Hermetic Metal/Ceramic package with
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
PDISS
IC
VCC
TJ
T STG
Parameter
Value
Unit
25
W
Device Current*
0.9
A
Collector-Supply Voltage*
32
V
Junction Temperature (Pulsed RF Operation)
250
°C
− 65 to +200
°C
7.0
°C/W
Power Dissipation*
(TC ≤ 75°C)
Storage Temperature
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
August 1992
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AM80912-005
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Valu e
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 1mA
IE = 0mA
48
—
—
V
BVEBO
IE = 1mA
IC = 0mA
3.5
—
—
V
BVCER
IC = 5mA
RBE = 10Ω
48
—
—
V
ICES
VBE = 0V
VCE = 28V
—
—
0.5
mA
hFE
VCE = 5V
IC = 250mA
30
—
300
—
DYNAMIC
Value
Symbol
Min.
Typ.
Max.
Unit
POUT
ηc
f = 960 — 1215MHz
PIN = 0.7W
VCC = 28V
6.0
—
—
W
f = 960 — 1215MHz
PIN = 0.7W
VCC = 28V
45
—
—
%
GP
f = 960 — 1215MHz
PIN = 0.7W
VCC = 28V
9.3
—
—
dB
Note:
2/4
Test Conditions
Pul se format: 6.4 µS on 6.6 µ S off , repeat f or 3.3 ms, then off for 4.5125 ms.
Duty Cycle: Burst 49.2%, overall 20.8%
AM80912-005
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
ZCL
TYPICAL COLLECTOR
LOAD IMPEDANCE
L
ZCL
H
L
ZIN
H
FREQ.
ZIN (Ω)
ZCL (Ω)
L = 960 MHz
8.2 + j 8.52
10.5 + j 12.9
M = 1090 MHz
11.1 + j 8.34
9.4 + j 11.3
H = 1215 MHz
15.6 + j 6.8
9.0 + j 8.3
PIN = 0.7 W
VCC = 28 V
Normalized to 50 ohms
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick AI2O3
C1
C2
C3
C4
:
:
:
:
100 µF Electrolytic Capacitor, 63V
.1 µF Ceramic Capacitor
Feedthrough Bypass SCI 712-022
.6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor
C5
C6
L1
L2
:
:
:
:
.6 — 4.5 pF, 2 pls, Johanson Gigatrim Capacitor
100 pF Chip Capacitor
No. 26 Wire, 4 Turn
No. 26 Wire, 4 Turn
3/4
AM80912-005
PACKAGE MECHANICAL DATA
.318/
.306
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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