Fairchild FFPF60SB60DSTU 4a, 600v stealthtm ii rectifier Datasheet

STEALTH
II Rectifier
FFPF60SB60DS
tm
Features
4A, 600V STEALTHTM II Rectifier
• High Speed Switching, trr < 25ns @ IF = 4A
The FFPF60SB60DS is STEALTHTM II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
• High Reverse Voltage and High Reliability
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
TO220F
1 2 3
1. Cathode 2. Anode(Cathode) 3. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VRRM
Peak Repetitive Reverse Voltage
VRWM
VR
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
TJ, TSTG
Parameter
Ratings
600
Units
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
4
A
@ TC = 100oC
40
Operating and Storage Temperature Range
A
o
-65 to +150
C
Thermal Characteristics
Symbol
RθJC
Parameter
Ratings
Maximum Thermal Resistance, Junction to Case
Units
o
8.7
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FFPF60SB60DS
FFPF60SB60DSTU
TO220F
-
-
50
©2008 Fairchild Semiconductor Corporation
FFPF60SB60DS Rev. A
1
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FFPF60SB60DS
March 2008
TM
Symbol
Min.
Typ.
Max.
Units
VFM1
IF = 4A
IF = 4A
Parameter
TC = 25oC
TC = 125oC
-
2.2
1.7
2.6
-
V
IRM1
VR = 600V
VR = 600V
TC = 25oC
TC = 125oC
-
-
100
500
µA
trr
IF = 1A, di/dt = 100A/µs, VR = 30V
TC = 25oC
-
16
23
ns
-
18
2
0.7
18
25
-
ns
A
-
45
2.8
1.8
64
-
nC
5
-
-
mJ
trr
Irr
S factor
Qrr
IF = 4A, di/dt = 200A/µs, VR = 390V
trr
Irr
S factor
Qrr
IF = 4A, di/dt = 200A/µs, VR = 390V
WAVL
Avalanche Energy ( L = 40mH)
o
TC = 25 C
TC = 125oC
nC
ns
A
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
FFPF60SB60DS Rev. A
2
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FFPF60SB60DS
Electrical Characteristics TC = 25oC unless otherwise noted
FFPF60SB60DS
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 2. Typical Reverse Current
vs. Reverse Voltage
40
50
TC = 125 C
Reverse Current , IR [µA]
Forward Current, IF [A]
10
o
10
o
75 C
o
25 C
1
o
TC = 125 C
1
o
TC = 75 C
0.1
0.01
1E-3
0.1
0
1
2
3
4
Forward Voltage, VF [V]
10
5
Figure 3. Typical Junction Capacitance
100
200
300
400
Reverse Voltage, VR [V]
500
600
Figure 4. Typical Reverse Recovery Time
vs. di/dt
60
50
Reverse Recovery Time, trr [ns]
Typical Capacitance
at 0V = 43 pF
40
Capacitances , Cj [pF]
o
TC = 25 C
30
20
10
50
o
40
TC = 125 C
30
o
TC = 75 C
20
o
TC = 25 C
0
0.1
1
10
Reverse Voltage, VR [V]
10
100
100
Figure 5. Typical Reverse Recovery
Current vs. di/dt
Average Forward Current, IF(AV) [A]
Reverse Recovery Current, Irr [A]
500
600
9
6
5
o
TC = 125 C
4
3
o
TC = 75 C
o
TC = 25 C
2
FFPF60SB60DS Rev. A
300
400
di/dt [A/µs]
Figure 6. Forward Current Derating Curve
7
1
100
200
200
300
400
di/dt [A/µs]
500
6
3
0
25
600
3
50
75
100
125
o
Case temperature, TC [ C]
150
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FFPF60SB60DS
Mechanical Dimensions
3.30 ±0.10
TO220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FFPF60SB60DS Rev. A
4
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Rev. I33
FFPF60SB60DS Rev. A
5
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FFPF60SB60DS
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