Fairchild FDB7030BLS 30v n-channel powertrenchâ®syncfetâ ¢ Datasheet

FDP7030BLS / FDB7030BLS
30V N-Channel PowerTrench SyncFET ™
General Description
Features
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON)
and low gate charge.
The FDP7030BLS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP7030BLS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP7030BL in parallel with a
Schottky diode.
• 56 A, 30 V.
RDS(ON) = 10.5 mΩ @ VGS = 10 V
RDS(ON) = 16.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (15nC typical)
• High performance trench technology for extremely
low RDS(ON) and fast switching
• High power and current handling capability
D
D
G
G
D
S
G
S
TO-220
TO-263AB
FDP Series
Absolute Maximum Ratings
Symbol
FDB Series
T A =25 oC unless otherwise noted
Parameter
VDSS
Drain-Source Voltage
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Ratings
Units
30
V
±20
V
(Note 1)
56
(Note 1)
160
PD
Total Power Dissipation @ TC = 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Derate above 25°C
TL
S
A
65
W
0.43
W/°C
–65 to +100
°C
275
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
2.3
°C/W
62.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDB7030BLS
FDB7030BLS
13’’
24mm
800 units
FDP7030BLS
FDP7030BLS
Tube
n/a
45
2001 Fairchild Semiconductor Corporation
FDP7030BLS Rev B(W)
FDP7030BLS/FDB7030BLS
May 2001
Symbol
Parameter
T A = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25°C
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V
ID = 1 mA
On Characteristics
ID = 1 mA
30
V
22
mV/°C
500
µA
VDS = 0 V
100
nA
VDS = 0 V
–100
nA
3
V
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 1 mA, Referenced to 25°C
1
2.3
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 28 A
47
S
VDS = 15 V,
f = 1.0 MHz
VGS = 0 V,
1708
pF
474
pF
134
pF
–4.4
VGS = 10 V,
ID = 28 A
VGS = 4.5 V,
ID = 23 A
VGS=10 V, ID = 28A, TJ = 100°C
8.6
13.2
12.4
mV/°C
10.5
16.5
16.5
50
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
(Note 2)
11
21
ns
8
16
ns
Turn–Off Delay Time
30
48
ns
tf
Turn–Off Fall Time
16
29
ns
Qg
Total Gate Charge
15
21
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V,
VGS = 10 V,
VDS = 15 V,
VGS = 5 V
ID = 1 A,
RGEN = 6 Ω
ID = 28 A
7
nC
5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 11.5A,
diF/dt = 300 A/µs
(Note 1)
0.44
0.60
20
(Note 2)
20
(Note 1)
3.5
A
0.7
V
ns
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP7030BLS Rev B(W)
FDP7030BLS/FDB7030BLS
Electrical Characteristics
FDP7030BLS/FDB7030BLS
Typical Characteristics
120
6.0V
5.0V
90
ID, DRAIN CURRENT (A)
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
VGS = 10V
4.5V
60
4.0V
30
0
VGS = 4.5V
1.8
1.6
5.0V
1.4
6.0V
7.0V
1.2
8.0V
0.8
0
1
2
3
4
5
0
20
40
VDS, DRAIN-SOURCE VOLTAGE (V)
60
80
100
120
I D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
1.4
I D = 28A
VGS =10V
RDS(ON) , ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10V
1
1.2
1
0.8
0.6
I D = 14A
0.03
o
TA = 100 C
0.02
o
TA = 25 C
0.01
-50
-25
0
25
50
75
100
2
4
6
8
10
o
T J, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
10
o
TA = 55 C
VD S = 5V
IS, REVERSE DRAIN CURRENT (A)
60
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
o
25 C
50
ID, DRAIN CURRENT (A)
o
100 C
40
30
20
10
VGS = 0V
o
TA = 100 C
1
o
25 C
0.1
o
-55 C
0.01
0.001
0
2
2.5
3
3.5
4
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.1
0.2
0.3
0.4
0.5
0.6
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP7030BLS Rev B(W)
(continued)
2500
f = 1MHz
VGS = 0 V
VDS = 5V
ID = 28A
10V
2000
8
15V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
C ISS
1500
1000
COSS
2
500
0
0
C RSS
0
5
10
15
20
25
0
30
5
Figure 7. Gate Charge Characteristics.
15
20
25
30
Figure 8. Capacitance Characteristics.
1000
100
P(pk), PEAK TRANSIENT POWER (W)
5000
10ms
100m
1s
R DS(ON) LIMIT
10s
50s
10
DC
V GS = 10V
SINGLE PULSE
o
RθJA = 2.3 C/W
o
TA = 25 C
1
0.1
1
10
VD S, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
R θJA = 2.3°C/W
T A = 25°C
4000
3000
2000
1000
0
0.001
100
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
I D, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg , GATE CHARGE (nC)
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R θJA (t) = r(t) + R θJA
R θJA = 2.3 °C/W
0.2
0.1
0.1
0.05
P(pk
0.02
t1
0.01
t2
TJ - T A = P * R θJA (t)
Duty Cycle, D = t 1 /
t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
FDP7030BLS Rev B(W)
FDP7030BLS/FDB7030BLS
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET.
Figure 12
FDP7030BLS.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
Time: 10ns/div
IDSS, REVERSE LEAKAGE CURRENT (A)
Current: 0.8A/div
0.1
o
T A = 100 C
0.01
0.001
o
TA = 25 C
0.0001
0.00001
0
Figure 12. FDP7030BLS SyncFET body
diode reverse recovery characteristic.
10
20
30
V DS, REVERSE VOLTAGE (V)
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP7030BL).
Current: 0.8A/div
Figure 13. Non-SyncFET (FDP7030BL) body
diode reverse recovery characteristic.
Time: 10ns/div
FDP7030BLS Rev B(W)
FDP7030BLS/FDB7030BLS
Typical Characteristics
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET 
VCX™
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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Semiconductor reserves the right to make changes at
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2
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