Microsemi APTM100VDA35T3G Dual boost chopper mosfet power module Datasheet

APTM100VDA35T3G
Dual Boost chopper
MOSFET Power Module
VDSS = 1000V
RDSon = 350mΩ typ @ Tj = 25°C
ID = 22A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction (PFC)
• Interleaved PFC
28 27 26 25
23 22
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
20 19 18
29
16
30
15
31
14
13
32
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
boost of twice the current capability
• RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
22
17
88
±30
420
390
25
50
3000
Unit
V
A
September, 2009
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–7
APTM100VDA35T3G– Rev 0
Symbol
VDSS
APTM100VDA35T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS = 1000V
Tj = 25°C
VGS = 0V,VDS = 800V
Tj = 125°C
VGS = 10V, ID = 11A
VGS = VDS, ID = 2.5mA
VGS = ±30V, VDS = 0V
Typ
350
3
Max
100
500
420
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 22A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
5.2
0.88
0.16
nF
186
nC
24
122
18
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 22A
RG = 5Ω
12
ns
155
40
900
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
µJ
623
1423
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
µJ
779
Chopper diode ratings and characteristics
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR=1000V
IF = 40A
IF = 80A
IF = 40A
IF = 40A
VR = 667V
di/dt=200A/µs
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Min
1000
Tj = 25°C
Tj = 125°C
Tc = 80°C
Typ
Max
100
500
Tj = 125°C
40
2.5
3.1
2
Tj = 25°C
250
Tj = 125°C
310
Tj = 25°C
415
Tj = 125°C
1650
Unit
V
µA
A
3
V
September, 2009
IRM
Test Conditions
ns
nC
2–7
APTM100VDA35T3G– Rev 0
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTM100VDA35T3G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
Transistor
Chopper diode
To heatsink
M4
4000
-40
-40
-40
2.5
Max
0.32
1.2
Unit
°C/W
V
150
125
100
4.7
110
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1 1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp ⎢ B25 / 85 ⎜⎜
⎢⎣
⎝ T25 T ⎠⎥⎦
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3–7
APTM100VDA35T3G– Rev 0
28
17
1
September, 2009
SP3 Package outline (dimensions in mm)
APTM100VDA35T3G
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
80
7V
40
6.5V
30
6V
20
5.5V
10
60
50
40
30
0
5
10
15
20
25
TJ=25°C
20
10
5V
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
70
TJ=125°C
30
0
1.2
VGS=10V
VGS=20V
1
3
4
5
6
7
8
9
25
Normalized to
VGS=10V @ 11A
1.1
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
0.9
20
15
10
0.8
5
0
0
10
20
30
40
50
60
ID, Drain Current (A)
25
50
75
100
125
September, 2009
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1.4
TJ=-55°C
0
150
TC, Case Temperature (°C)
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4–7
APTM100VDA35T3G– Rev 0
VGS=15, 10&8V
50
ID, Drain Current (A)
ID, Drain Current (A)
60
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=11A
2.0
1.5
1.0
0.5
0.0
-50 -25
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
limited by RDSon
1.1
ID, Drain Current (A)
1.0
0.9
0.8
0.7
0.6
1ms
10
Single pulse
TJ=150°C
TC=25°C
10ms
1
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
10000
Ciss
Coss
1000
Crss
100
0
10
20
30
40
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
10
100
1000
VDS, Drain to Source Voltage (V)
50
VDS, Drain to Source Voltage (V)
14
ID=22A
TJ=25°C
12
VDS=200V
VDS=500V
10
VDS=800V
8
6
4
2
0
0
50
100
150
200
250
September, 2009
VGS(TH), Threshold Voltage
(Normalized)
25
100
1.2
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
Gate Charge (nC)
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5–7
APTM100VDA35T3G– Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100VDA35T3G
APTM100VDA35T3G
Delay Times vs Current
Rise and Fall times vs Current
80
180
td(off)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
70
140
60
120
tr and tf (ns)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
100
80
60
40
50
40
tr
30
20
td(on)
10
20
0
0
0
10
20
30
40
50
0
10
ID, Drain Current (A)
50
4
Eon
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
2
1.5
Switching Energy (mJ)
Eoff
1
0.5
VDS=670V
ID=22A
TJ=125°C
L=100µH
3.5
3
2.5
Eoff
2
Eon
1.5
Eoff
1
0.5
0
0
0
10
20
30
40
50
0
ID, Drain Current (A)
5
10
15
20
25
30
35
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
1000
250
225
200
ZVS
175
150
125
100
75
ZCS
VDS=670V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
50
25
0
5
8
Hard
switching
10
13
15
18
ID, Drain Current (A)
100
20
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
September, 2009
Switching Energy (mJ)
20
30
40
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2.5
Frequency (kHz)
tf
VSD, Source to Drain Voltage (V)
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6–7
APTM100VDA35T3G– Rev 0
td(on) and td(off) (ns)
160
APTM100VDA35T3G
Typical chopper diode performance curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.4
1.2
0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
trr, Reverse Recovery Time (ns)
IF, Forward Current (A)
Trr vs. Current Rate of Charge
400
80
60
TJ=125°C
40
20
TJ=25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
TJ=125°C
VR=667V
350
300
250
200
80 A
150
40 A
20 A
100
3.0
0
200
80 A
TJ=125°C
VR=667V
40 A
2
20 A
1
0
0
200
400
600
800
1000
1200
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
QRR vs. Current Rate Charge
3
600
800
1000 1200
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
4
400
IRRM vs. Current Rate of Charge
40
TJ=125°C
VR=667V
30
40 A
80 A
20 A
20
10
0
-diF/dt (A/µs)
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
150
125
100
75
50
September, 2009
25
0
1
10
100
1000
VR, Reverse Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
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and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7–7
APTM100VDA35T3G– Rev 0
C, Capacitance (pF)
175
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