Inchange Semiconductor Product Specification BD745/A/B/C Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PN package ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BD745 Collector-base voltage 70 Open emitter VEBO 90 BD745C 110 BD745 45 Collector-emitter voltage Emitter-base voltage V BD745B BD745A VCEO UNIT 50 BD745A VCBO VALUE 60 Open base V BD745B 80 BD745C 100 Open collector 5 V IC Collector current 20 A ICM Collector current-peak 25 A IB Base current 7 A PC Collector power dissipation TC=25℃ 115 Ta=25℃ 3.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BD745/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD745 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 45 BD745A 60 IC=30mA; IB=0 V BD745B 80 BD745C 100 VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=0.5 A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=20 A;IB=5 A 3.0 V VBE -1 Base-emitter on voltage IC=5A ; VCE=4V 1.0 V VBE -2 Base-emitter on voltage IC=20A ; VCE=4V 3.0 V ICEO Collector cut-off current 0.1 mA VCE=50V; VBE=0 TC=125℃ VCE=70V; VBE=0 TC=125℃ VCE=90V; VBE=0 TC=125℃ VCE=110V; VBE=0 TC=125℃ 0.1 5.0 0.1 5.0 0.1 5.0 0.1 5.0 mA 0.5 mA BD745/A VCE=30V; IB=0 BD745B/C VCE=60V; IB=0 BD745 BD745A ICBO Collector cut-off current BD745B BD745C IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V 40 hFE-2 DC current gain IC=5A ; VCE=4V 20 hFE-3 DC current gain IC=20A ; VCE=4V 5 150 Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time IC=5 A;IB1=-IB2=0.5 A VBE(off)=-4.2V; RL=6Ω tp=20μs 0.02 μs 0.35 μs 0.5 μs 0.4 μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.1 ℃/W Inchange Semiconductor Product Specification BD745/A/B/C Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3