ASI AVD002F Npn silicon rf power transistor Datasheet

AVD002F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .250 2L FLG(B)
A
The ASI AVD002F is Designed for
Class C, DME/TACAN Applications up
to 1150 MHz.
.100 X 45°
ØD
.088 x 45°
CHAMFER
C
B
FEATURES:
• Internal Input Matching Network
• PG = 9.0 dB at 2.0 W/1150 MHz
• Omnigold™ Metalization System
E
F
G
H
I
MAXIMUM RATINGS
250 mA
IC
VCC
37 V
PDISS
10 W @ TC ≤ 100 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
10 °C/W
CHARACTERISTICS
K
DIM
MINIMUM
inches / mm
inches / mm
A
.095 / 2.41
.105 / 2.67
B
1.050 / 26.67
C
.245 / 6.22
D
.120 / 3.05
.140 / 3.56
E
.552 / 14.02
.572 / 14.53
F
.790 / 20.07
.810 / 20.57
H
.003 / 0.08
.007 / 0.18
I
.052 / 1.32
.072 / 1.83
J
.120 / 3.05
.130 / 3.30
MAXIMUM
.255 / 6.48
.285 / 7.24
G
.210 / 5.33
K
ORDER CODE: ASI10552
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
J
BVCBO
IC = 1 mA
BVCER
IC = 5 mA
BVEBO
IE = 1 mA
ICES
VCE = 35 V
hFE
VCE = 5.0 V
PG
ηC
VCC = 35 V
RBE = 10 Ω
IC = 100 mA
POUT = 2 W
MINIMUM TYPICAL MAXIMUM
V
45
V
3.5
V
30
f = 1025 - 1150 MHz
UNITS
45
9.0
35
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
1.0
mA
300
--dB
%
REV. B
1/1
Similar pages