BILIN EGP30D High efficiency rectifier Datasheet

BL GALAXY ELECTRICAL
EGP30A(Z) --- EGP30K(Z)
VOLTAGE RANGE: 50 --- 800 V
CURRENT: 3.0 A
HIGH EFFICIENCY RECTIFIER
FEATURES
DO - 27
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High surge current capability
Easily cleaned with alcohol,Isopropanol
and similar s olvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plas tic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15grams
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unles s otherwise s pecified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EGP EGP EGP EGP EGP EGP EGP EGP
UNITS
30A 30B 30C 30D 30F 30G 30J 30K
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@TA =75
VRRM
VRMS
V DC
50
100
150
200
300
400
600
800
35
50
70
100
105
150
140
200
210
300
280
400
420
600
560
800
V
V
V
IF(AV)
3.0
A
IFSM
125.0
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
@TA =25
at rated DC blocking voltage
@TA =125
Maximum reverse recovery time (Note1)
Typical junction capacitance
(Note2)
Typical thermal resistance
(Note3)
Typical thermal resistance
(Note4)
Operating junction temperature range
Storage temperature range
VF
0.95
1.25
5.0
IR
trr
CJ
RθJA
RθJL
TJ
TSTG
1.7
A
100.0
50
95
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
75
75
20
8.5
- 55 ---- + 150
- 55 ---- + 150
V
ns
pF
/W
/W
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
4.Thermal resistance junction to lead.
Document Number 0262010
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
EGP30A(Z)---EGP30K(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
t rr
50
N1.
10
N1.
+0.5A
D.U.T.
(+)
0
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE1)
-0 .2 5 A
(-)
-1 .0 A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 20/30 ns/cm
EGP30F-EGP30G
TJ=25
Pulse Width=300 µS
10
EGP30A-EGP30D
EGP30J-EGP30K
1
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
100
AMPERES
INSTANTANEOUS FORWARD CURRENT
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
1.8 2
3.0
2.0
Single Phase
Half W ave 60Hz
Resistive or
Inductive Load
1.0
0
0
25
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
100
75
50
EGP30A-EGP30D
EGP30F&EGP30K
0.1
1
4
10
REVERSE VOLTAGE,VOLTS
100
1000
PEAK FORWARD SURGE CURRENT
AMPERES
JUNCTION CAPACITANCE,pF
TJ=25
125
0
75
100
125
150
FIG.5 -- PEAK FORWARD SURGE CURRENT
175
25
50
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
150
z
175
150
TJ=125 .
3ms Single Half
Sine-Wave
125
100
75
50
25
0
1
10
100
NUMBER OF CYCLES AT 60Hz
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Document Number 0262010
BLGALAXY ELECTRICAL
2.
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